Diode for a printable composition
An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between 2.5 to 7 microns; a plurality of first terminals spaced apart and coupled to the light emitting region peripherally on a first side, each first terminal of the plurality of first terminals having a height between about 0.5 to 2 microns; and one second terminal coupled centrally to a mesa region of the light emitting region on the first side, the second terminal having a height between 1 to 8 microns.
1. A diode comprising:
a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between 2.5 to 7 microns;
a plurality of first terminals spaced apart and coupled to the light emitting region peripherally on a first side, each first terminal of the plurality of first terminals having a height between about 0.5 to 2 microns; and
one second terminal coupled centrally to a mesa region of the light emitting region on the first side, the second terminal having a height between 1 to 8 microns.
2. The diode of claim 1 , wherein the mesa region has a height of 0.5 to 2 microns and a diameter between about 6 to 22 microns.
3. The diode of claim 1 , wherein the mesa region further comprises an alloyed metallic layer deposited before the second terminal and comprising nickel about 20 to 30 Angstroms in height and coupled to the second terminal.
4. The diode of claim 1 , wherein the mesa region further comprises an alloyed metallic layer deposited before the second terminal and comprising nickel and gold about 20 to 30 Angstroms in height and coupled to the second terminal.
5. The diode of claim 1 , wherein the mesa region further comprises an alloyed metallic layer deposited before the second terminal and comprising nickel and gold about 80 to 120 Angstroms in height and coupled to the second terminal.
6. The diode of claim 1 , wherein the second terminal further comprises a center metal layer about 0.5 to 1.5 microns in height and about 6 to 10 microns in diameter, the center metal layer coupled to the mesa region of the light emitting or absorbing region.
7. The diode of claim 6 , wherein the center metal layer comprises a first layer of silver coupled to the mesa region, a second layer of nickel, a third layer of aluminum, and a fourth layer of nickel.
8. The diode of claim 7 , wherein the first layer of silver is deposited to be about 180 to 220 nm in height, the second layer of nickel is deposited to be about 180 to 220 nm in height, the third layer of aluminum is deposited to be about 300 to 700 nm in height, and the fourth layer of nickel is deposited to be about 180 to 220 nm in height.
9. The diode of claim 6 , wherein the center metal layer comprises a layer of silver, nickel or aluminum coupled to the mesa region.
10. The diode of claim 6 , wherein the second terminal further comprises die metal about 4 to 6 microns in height and a width between about 4 microns to 11 microns and alloyed to the mesa region of the light emitting or absorbing region and to the center metal layer.
11. The diode of claim 10 , wherein the second terminal further comprises a first layer of silver coupled to the mesa region of the light emitting or absorbing region and to the center metal layer, a second layer of nickel, a third layer of aluminum, a fourth layer of nickel, a fifth layer of aluminum, a sixth layer of nickel, and a seventh layer of gold.
12. The diode of claim 11 , wherein the first layer of silver is deposited to be about 180 to 220 nm in height, the second layer of nickel is deposited to be about 180 to 220 nm in height, the third layer of aluminum is deposited to be about 1.5 to 2.5 microns in height, the fourth layer of nickel is deposited to be about 230 to 270 nm in height, the fifth layer of aluminum is deposited to be about 1.5 to 2.5 microns in height, the sixth layer of nickel is deposited to be about 230 to 270 nm in height, and the fourth layer of gold is deposited to be about 80 to 120 nm in height.
13. The diode of claim 1 , wherein the second terminal and the light emitting or absorbing region further comprise nitride passivation on a plurality of lateral sides, the nitride passivation between about 0.2 to 1.0 microns thick.
14. The diode of claim 1 , wherein each first terminal of the plurality of first terminals comprises via metal, has a width between about 2 to 4 microns and a length between about 6 to 11 microns.
15. The diode of claim 14 , wherein each first terminal of the plurality of first terminals comprises a first layer of titanium coupled to the light emitting or absorbing region, a second layer of aluminum, a third layer of nickel, and a fourth layer of gold.
16. The diode of claim 15 , wherein the first layer of titanium is deposited to be about 80 to 120 Angstroms in height, the second layer of aluminum is deposited to be about 450 to 550 nm in height, the third layer of nickel is deposited to be about 450 to 550 nm in height, and the fourth layer of gold is deposited to be about 80 to 120 nm in height.
17. The diode of claim 1 , wherein lateral sides of the diode are formed during fabrication on a wafer as a perimeter trench about 0.5 to 5.0 microns deep between each diode on the wafer.
18. The diode of claim 1 , wherein a second side of the light emitting or absorbing region is formed during fabrication by substrate removal from a second, back side of a wafer.
19. The diode of claim 1 , wherein the light emitting or absorbing region is substantially hexagonal laterally and the diameter is measured opposing face-to-face.
20. The diode of claim 1 , wherein the light emitting or absorbing region comprises gallium nitride (GaN).
21. The diode of claim 20 , wherein the plurality of first terminals are in ohmic contact with p+ GaN and the second terminal is in ohmic contact with n+ GaN.
22. The diode of claim 20 , wherein the plurality of first terminals are in ohmic contact with n+ GaN and the second terminal is in ohmic contact with p+ GaN.
23. The diode of claim 1 , wherein the diode has a diameter between about 20 to 30 microns and a height between about 5 to 15 microns.
24. The diode of claim 1 , wherein the diode has a diameter between about 10 to 50 microns and a height between about 5 to 25 microns.
25. The diode of claim 1 , wherein the diode is substantially hexagonal laterally, has a diameter between about 10 to 50 microns measured opposing face-to face, and a height between about 5 to 25 microns.
26. The diode of claim 1 , wherein the diode is substantially hexagonal laterally, has a diameter measured opposing face-to face between about 20 to 30 microns and a height between about 5 to 15 microns.
27. The diode of claim 1 , wherein the diode has a width and length each between about 10 to 50 microns each and a height between about 5 to 25 microns.
28. The diode of claim 1 , wherein the diode has a width and length each between about 20 to 30 microns each and a height between about 5 to 15 microns.
29. The diode of claim 1 , wherein the light emitting or absorbing region of the diode is substantially hexagonal, square, triangular, rectangular, lobed, stellate, or toroidal.
30. The diode of claim 1 , wherein the light emitting or absorbing region of the diode has a surface texture comprising a plurality of circular rings, or a plurality of substantially curvilinear trapezoids, or a plurality of parallel stripes, or a stellate pattern.
31. The diode of claim 1 , wherein the diode is substantially hexagonal laterally and wherein each lateral side of the diode is less than about 10 microns in height.
32. The diode of claim 1 , wherein a contact of the second metal terminal is spaced apart from contacts of the plurality of first metal terminals by about 2 to 5 microns in height.
33. The diode of claim 1 , wherein a contact of the second metal terminal is spaced apart from contacts of the plurality of first metal terminals by about 1 to 7 microns in height.
34. The diode of claim 31 , wherein each lateral side of the diode has a substantially sigmoidal curvature and terminates in a curved point.
35. The diode of claim 1 , wherein the diode comprises at least one inorganic semiconductor selected from the group consisting of: silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, InAlGaP, AlInGaAs, InGaNAs, and AlInGASb.
36. The diode of claim 1 , wherein the diode comprises at least one organic semiconductor selected from the group consisting of: π-conjugated polymers, poly(acetylene)s, poly(pyrrole)s, poly(thiophene)s, polyanilines, polythiophenes, poly(p-phenylene sulfide), poly(para-phenylene vinylene)s (PPV) and PPV derivatives, poly(3-alkylthiophenes), polyindole, polypyrene, polycarbazole, polyazulene, polyazepine, poly(fluorene)s, polynaphthalene, polyaniline, polyaniline derivatives, polythiophene, polythiophene derivatives, polypyrrole, polypyrrole derivatives, polythianaphthene, polythianaphthane derivatives, polyparaphenylene, polyparaphenylene derivatives, polyacetylene, polyacetylene derivatives, polydiacethylene, polydiacetylene derivatives, polyparaphenylenevinylene, polyparaphenylenevinylene derivatives, polynaphthalene, polynaphthalene derivatives, polyisothianaphthene (PITN), polyheteroarylenvinylene (ParV) in which the heteroarylene group is thiophene, furan or pyrrol, polyphenylene-sulphide (PPS), polyperinaphthalene (PPN), polyphthalocyanine (PPhc), and their derivatives, copolymers thereof and mixtures thereof.
37. A diode comprising:
a light emitting or absorbing region having a mesa region, the mesa region having a height of 0.5 to 2 microns and a diameter between about 6 to 22 microns;
a plurality of first terminals spaced apart and coupled to the light emitting region on a first side and peripherally to the mesa region, each first terminal of the plurality of first terminals having a height between about 0.5 to 2 microns; and
one second terminal coupled centrally to the mesa region of the light emitting region on the first side, the second terminal having a height between 1 to 8 microns;
wherein the diode has a lateral dimension between about 10 to 50 microns and a height between about 5 to 25 microns.
38. The diode of claim 37 , wherein the light emitting or absorbing region has a diameter between about 20 and 30 microns and a height between 2.5 to 7 microns.
39. The diode of claim 37 , wherein a contact of the second metal terminal is spaced apart from contacts of the plurality of first metal terminals by about 2 to 5 microns in height.
40. The diode of claim 37 , wherein a contact of the second metal terminal is spaced apart from contacts of the plurality of first metal terminals by about 1 to 7 microns in height.
41. The diode of claim 37 , wherein the mesa region further comprises an alloyed metallic layer coupled to the second terminal, about 20 to 30 Angstroms in height, and comprising nickel or nickel and gold.
42. The diode of claim 37 , wherein the second terminal further comprises a center metal layer about 0.5 to 1.5 microns in height and about 6 to 10 microns in diameter, the center metal layer coupled to the mesa region of the light emitting or absorbing region.
43. The diode of claim 42 , wherein the center metal layer comprises a layer of silver, nickel or aluminum coupled to the mesa region.
44. The diode of claim 42 , wherein the second terminal further comprises die metal about 3 to 6 microns in height and a width between about 4 microns to 11 microns and alloyed to the mesa region of the light emitting or absorbing region and to the center metal layer.
45. The diode of claim 37 , wherein the second terminal and the light emitting or absorbing region further comprise nitride passivation on a plurality of lateral sides, the nitride passivation between about 0.2 to 1.0 microns thick.
46. The diode of claim 37 , wherein each first terminal of the plurality of first terminals comprises via metal, has a width between about 2 to 4 microns and a length between about 6 to 11 microns.
47. The diode of claim 37 , wherein lateral sides of the diode are formed during fabrication on a wafer as a perimeter trench about 0.5 to 5.0 microns deep between each diode on the wafer.
48. The diode of claim 37 , wherein a second side of the light emitting or absorbing region is formed during fabrication by substrate removal from a second, back side of a wafer.
49. The diode of claim 48 , wherein the second side has a surface texture comprising a plurality of circular rings, or a plurality of substantially curvilinear trapezoids, or a plurality of parallel stripes, or a stellate pattern.
50. The diode of claim 37 , wherein the diode is substantially hexagonal laterally, has a diameter measured opposing face-to face between about 20 to 30 microns and a height between about 5 to 15 microns.
51. The diode of claim 37 , wherein the diode is substantially hexagonal laterally, each lateral side of the diode is less than about 10 microns in height, has a substantially sigmoidal curvature and terminates in a curved point.
52. The diode of claim 37 , wherein the diode comprises at least one inorganic semiconductor selected from the group consisting of: silicon, gallium arsenide (GaAs), gallium nitride (GaN), GaP, InAlGaP, InAlGaP, AlInGaAs, InGaNAs, and AlInGASb.
53. A diode comprising:
a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between 2.5 to 7 microns;
a plurality of first terminals spaced apart and coupled to the light emitting region peripherally on a first side, each first terminal having a height between about 0.5 to 2 microns; and
one second terminal coupled centrally to a mesa region of the light emitting region on the first side, the second terminal having a height between 3 to 6 microns;
wherein the diode is substantially hexagonal laterally, has a diameter between about 20 to 30 microns and a height between about 5 to 15 microns, wherein each lateral side of the diode is less than about 10 microns in height, has a substantially sigmoidal curvature and terminates in a curved point.
54. A diode comprising:
a light emitting or absorbing region having a mesa region, the mesa region having a height of 0.5 to 2 microns and a diameter between about 6 to 22 microns;
a plurality of first terminals spaced apart and coupled to the light emitting region on a first side and peripherally to the mesa region, each first terminal of the plurality of first terminals having a height between about 0.5 to 2 microns; and
one second terminal coupled centrally to the mesa region of the light emitting region on the first side, the second terminal having a height between 1 to 8 microns, the second metal terminal having one contact, and the one contact of the second terminal spaced apart from contacts of the plurality of first metal terminals by about 1 to 7 microns in height;
wherein the diode is substantially hexagonal laterally, has a diameter between about 10 to 50 microns and a height between about 5 to 25 microns, wherein each lateral side of the diode is less than about 15 microns in height, has a substantially sigmoidal curvature and terminates in a curved point.