L-shaped feature, method of making an L-shaped feature and method of making an L-shaped structure
In accordance with an embodiment of the present invention, a method for making a semiconductor device comprises forming a photo sensitive layer on a semiconductive substrate, and forming an L-shaped structure in the photo sensitive layer by exposing the photo sensitive layer to light via a reticle, wherein the reticle comprises an L-shapes feature having a first non-orthogonal edge at an intersection of two legs of the L-shaped feature.
1. A method for making a semiconductor device, the method comprising:
forming a photo sensitive layer on a semiconductive substrate; and
illuminating an L-shaped feature in a reticle thereby forming an L-shaped structure in the photo sensitive layer, wherein the L shaped feature is placed directly over the L-shaped structure, wherein the L-shaped feature comprises a first non-orthogonal edge at an intersection of two legs of the L-shaped feature.
2. The method according to claim 1 , wherein illuminating the L-shaped feature comprises a one-time illumination step.
3. The method according to claim 1 , wherein the L-shaped feature comprises two sub-structures separated by an opaque lithographic sub-resolution gap.
4. The method according to claim 3 , wherein each of the sub-structures comprises a sub feature non-orthogonal edge.
5. The method according to claim 1 , wherein the first non-orthogonal edge decreases a width of the L-shaped feature at the intersection.
6. The method according to claim 1 , wherein the L-shaped feature comprises a second non-orthogonal edge at the intersection of the two legs.
7. The method according to claim 6 , wherein the first non-orthogonal edge and the second non-orthogonal edge are parallel.
8. The method according to claim 6 , wherein the first non-orthogonal edge and the second non-orthogonal edge comprise an edge between 40 degree and 50 degree.
9. A lithography mask comprising:
a transparent substrate; and
a pattern forming material arranged over the transparent substrate, wherein the pattern forming material comprises a continuous L-shaped feature, wherein the continuous L-shaped feature comprises a first non-orthogonal edge at an intersection of two legs.
10. The lithography mask according to claim 9 , wherein the first non-orthogonal edge decreases a width of the continuous L-shaped feature at the intersection.
11. The lithography mask according to claim 9 , wherein the continuous L-shaped feature comprises a second non-orthogonal edge.
12. The lithography mask according to claim 9 , wherein the first non-orthogonal edge comprises an edge between 40 degree and 50 degree.
13. A method for making a lithography mask, the method comprising:
forming a pattern forming material over a transparent substrate; and
patterning the pattern forming material so that the pattern forming material comprises a continuous L-shaped feature, the continuous L-shaped feature comprising a first non-orthogonal edge at an intersection of two legs.
14. The method according to claim 13 , wherein the first non-orthogonal edge decreases a width of the L-shaped feature at the intersection.
15. The method according to claim 13 , wherein the continuous L-shaped feature comprises a second non-orthogonal edge.
16. The method according to claim 13 , wherein the first non-orthogonal edge is a 45 degree edge.
17. A method for making a semiconductor device, the method comprising:
forming a photo sensitive layer on a semiconductive substrate; and
illuminating a continuous L-shaped feature in a reticle thereby forming an L-shaped structure in the photo sensitive layer, wherein the continuous L-shaped feature comprises a first non-orthogonal edge at an intersection of two legs of the continuous L-shaped feature.
18. The method according to claim 17 , wherein illuminating an continuous L-shaped feature comprises a one-time illumination step.
19. The method according to claim 18 , wherein the first non-orthogonal edge decreases a width of the continuous L-shaped feature at the intersection.
20. The method according to claim 18 , wherein the continuous L-shaped feature comprises a second non-orthogonal edge at the intersection of the two legs.
21. The method according to claim 20 , wherein the first non-orthogonal edge and the second non-orthogonal edge are parallel.
22. The method according to claim 20 , wherein the first non-orthogonal edge and the second non-orthogonal edge comprise an edge between 40 degree and 50 degree.