Semiconductor device and method for manufacturing the same

1. A semiconductor device comprising:

a semiconductor substrate; and

an upper surface electrode laminated on an upper surface of the semiconductor substrate, wherein

at least one portion of the upper surface electrode includes a first layer formed on an upper surface side of the semiconductor substrate, a second layer formed on an upper surface side of the first layer, a third layer in contact with the upper surface of the second layer, and a fourth layer formed on an upper surface side of the third layer,

the first layer is a barrier metal layer;

the second layer is an Al layer;

the third layer is one of an Al—Si layer, an Al—Cu layer and an Al—Si—Cu layer; and

the fourth layer is a solder joint layer.

2. A method for manufacturing a semiconductor device comprising a semiconductor substrate and an upper surface electrode laminated on an upper surface of the semiconductor substrate,

the method comprising:

forming a first layer by a barrier metal on the upper surface of the semiconductor substrate;

forming a second layer by an aluminum on an upper surface of the first layer after forming a first layer;

forming a third layer by one of an Al—Si, an Al—Cu and an Al—Si—Cu on an upper surface of the second layer after forming the second layer;

performing zinc substitution treatment on an upper surface of the third layer after forming the third layer; and

forming a fourth layer, which is a solder joint layer, on the upper surface of the third layer by nonelectrolytic plating after performing zinc substitution treatment.