Method for preparing multilayer of nanocrystals, and organic-inorganic hybrid electroluminescence device comprising multilayer of nanocrystals prepared by the method
A method for preparing a multilayer of nanocrystals. The method includes the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals. Further, an organic-inorganic hybrid electroluminescence device using a multilayer of nanocrystals prepared by the method as a luminescent layer.
1. A method for preparing a layer of nanocrystals comprising;
preparing the nanocrystals coordinated with the photosensitive compound or a mixed solution of the nanocrystals and the photosensitive compound;
coating the nanocrystals coordinated with the photosensitive compound on a substrate or coating the mixed solution of the nanocrystals and the photosensitive compound on a substrate, and then drying the coated film; and then
exposing the dried film to UV light to form a solvent resistant cross-network of the nanocrystal layer, wherein the photosensitive compound is a compound with a photoreactive functional group selectively bonded to a linker through an alkylene amide, phenylene, biphenylene, ester, or ether group.
2. The method according to claim 1 , wherein the nanocrystals are at least one kind of nanocrystals selected from the group consisting of metal nanocrystals, Group II-VI compound semiconductor nanocrystals, Group III-V compound semiconductor nanocrystals, and Group IV-VI compound semiconductor nanocrystals, or a mixture of two or more nanocrystals selected from the group consisting of metal nanocrystals, Group II-VI compound semiconductor nanocrystals, Group III-V compound semiconductor nanocrystals, and Group IV-VI compound semiconductor nanocrystals, wherein a mixture is in a form of a simple mixture, fused crystals or an alloy.
3. The method according to claim 2 , wherein the metal nanocrystals are selected from the group consisting of Au, Ag, Pt, Pd, Co, Cu, Fe, Al, Ni, Ir, Rh, Ru and Mo.
4. The method according to claim 2 , wherein the Group II-VI compound semiconductor nanocrystals are selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe and HgTe, wherein the Group III-V compound semiconductor nanocrystals are selected from the group consisting of GaN, GaP, GaAs, InN, InP, InAs, AIN, AlP, and AlAs, and wherein the Group IV-VI compound semiconductor nanocrystals are selected from the group consisting of PbS, PbSe, and PbTe.
5. The method according to claim 1 , wherein the functional group is a carbon-carbon double bond or an acryl group.
6. The method according to claim 1 , wherein the linker is a cyanide group, thiol group, amino group, carboxylic acid group, or phosphonic acid group.
7. The method according to claim 1 , wherein drying is carried out at 20˜300° C.
8. The method according to claim 1 , wherein light exposure is carried out using a light source having an energy of 100˜800 W at a wavelength of 200˜500 nm.
9. The method according to claim 1 , wherein energy for photosensitization treatment upon the light exposure is in the range of 50˜850 mJ/cm 2 .
10. The method according to claim 1 , further comprising disposing a monolayer of polymer on the layer of nanocrystals.
11. An article comprising a layer of nanocrystals manufactured by the method according to claim 1 .
12. A method for preparing a layer of nanocrystals-polymer comprising:
preparing the nanocrystals coordinated with the photosensitive compound or a mixed solution of the nanocrystals and the photosensitive compound;
coating the nanocrystals coordinated with the photosensitive compound on a substrate or coating a mixed solution of the nanocrystals and the photosensitive compound on a substrate, and then drying the coated film;
exposing the dried film to UV light to form a solvent resistant cross-network of the nanocrystal layer, wherein the photosensitive compound is a compound with a photoreactive functional group selectively bonded to a linker through an alkylene amide, phenylene, biphenylene, ester, or ether group;
forming a solvent resistant polymer monolayer on the nanocrystal layer.
13. The method according to claim 12 , wherein the nanocrystals are at least one kind of nanocrystals selected from the group consisting of metal nanocrystals, Group II-VI compound semiconductor nanocrystals, Group III-V compound semiconductor nanocrystals, and Group IV-VI compound semiconductor nanocrystals, or a mixture of two or more nanocrystals selected from the group consisting of metal nanocrystals, Group II-VI compound semiconductor nanocrystals, Group III-V compound semiconductor nanocrystals, and Group IV-VI compound semiconductor nanocrystals, wherein a mixture is in a form of a simple mixture, fused crystals or an alloy.
14. The method according to claim 13 , wherein the metal nanocrystals are selected from the group consisting of Au, Ag, Pt, Pd, Co, Cu, Fe, Al, Ni, Ir, Rh, Ru and Mo.
15. The method according to claim 13 , wherein the Group II-VI compound semiconductor nanocrystals are selected from the group consisting of CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe and HgTe, wherein the Group III-V compound semiconductor nanocrystals are selected from the group consisting of GaN, GaP, GaAs, InN, InP, InAs, AIN, AlP, and AlAs, and wherein the Group IV-VI compound semiconductor nanocrystals are selected from the group consisting of PbS, PbSe, and PbTe.
16. The method according to claim 12 , wherein the functional group is a carbon-carbon double bond or an acryl group.
17. The method according to claim 12 , wherein the linker is a cyanide group, thiol group, amino group, carboxylic acid group, or phosphonic acid group.
18. The method according to claim 12 , wherein drying is carried out at 20˜300° C.
19. The method according to claim 12 , wherein light exposure is carried out using a light source having an energy of 100˜800 W at a wavelength of 200˜500 nm.
20. The method according to claim 12 , wherein energy for photosensitization treatment upon the light exposure is in the range of 50˜850 mJ/cm 2 .
21. An article comprising a layer of nanocrystals-polymer manufactured by the method according to claim 12 .