Polycrystalline diamond compacts and related drill bits
In an embodiment, a polycrystalline diamond compact (“PDC”) comprises a cemented carbide substrate including a first cemented carbide portion and a second cemented carbide portion bonded to the first cemented carbide portion and exhibiting an erosion resistance that is greater than the first cemented carbide portion. The PDC further comprises a polycrystalline diamond (“PCD”) table bonded to the first cemented carbide portion. The PCD table includes a plurality of bonded diamond grains exhibiting diamond-to-diamond bonding therebetween, with the plurality of bonded diamond grains defining a plurality of interstitial regions.
1. A polycrystalline diamond compact, comprising:
a cemented carbide substrate including a first cemented carbide portion having a lateral periphery and a second cemented chromium carbide portion bonded to and substantially surrounding the lateral periphery of the first cemented carbide portion, the second cemented chromium carbide portion exhibiting a second erosion resistance that is greater than a first erosion resistance exhibited by the first cemented carbide portion, the second cemented chromium carbide portion exhibiting a concentration of chromium carbide that is greater than that of the first cemented carbide portion; and
a polycrystalline diamond table bonded to the first cemented carbide portion, the polycrystalline diamond table including a plurality of bonded diamond grains exhibiting diamond-to-diamond bonding therebetween, the plurality of bonded diamond grains defining a plurality of interstitial regions.
2. The polycrystalline diamond compact of claim 1 wherein the first cemented carbide portion comprises a first concentration of chromium carbide of about 0.70 weight (“wt”) % to about 0.80 wt % chromium carbide and the second cemented carbide portion comprises a second concentration of chromium carbide of about 1.0 wt % to about 2.0 wt % chromium carbide.
3. The polycrystalline diamond compact of claim 2 wherein the second concentration of chromium carbide is about 1.1 to about 1.7 times the first concentration of chromium carbide.
4. The polycrystalline diamond compact of claim 1 wherein at least a portion of the polycrystalline diamond table exhibits a chromium concentration of less than about 1.0 weight % (“wt %”).
5. The polycrystalline diamond compact of claim 4 wherein the polycrystalline diamond table is substantially free of chromium.
6. The polycrystalline diamond compact of claim 4 wherein the chromium concentration is less than about 0.25 wt %.
7. The polycrystalline diamond compact of claim 1 wherein the first cemented carbide portion is disposed between the polycrystalline diamond table and the second cemented carbide portion.
8. The polycrystalline diamond compact of claim 1 wherein the first cemented carbide portion exhibits a substantially conical geometry.
9. The polycrystalline diamond compact of claim 1 , further comprising an interface between the first cemented carbide portion and the second cemented carbide substrate.
10. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table is integrally formed with the first cemented carbide portion.
11. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table is a preformed polycrystalline diamond table.
12. The polycrystalline diamond compact of claim 1 wherein the polycrystalline diamond table comprises a leached region from which metal-solvent catalyst has been depleted from at least some of the plurality of interstitial regions.
13. The polycrystalline diamond compact of claim 1 wherein the first cemented carbide portion exhibits a first thickness of about 0.0050 inch to about 0.100 inch, and the second cemented carbide portion exhibits a second thickness of about 0.30 inch to about 0.60 inch.
14. The polycrystalline diamond compact of claim 13 wherein the first thickness is about 0.0050 inch to about 0.030 inch.
15. The polycrystalline diamond compact of claim 1 wherein the second cemented carbide portion comprises chromium carbide.
16. The polycrystalline diamond compact of claim 1 wherein the cemented carbide substrate exhibits a first thickness of about 0.0050 inch to about 0.100 inch, and the cemented carbide support exhibits a second thickness of about 0.30 inch to about 0.60 inch.
17. The polycrystalline diamond compact of claim 16 wherein the first thickness is about 0.0050 inch to about 0.030 inch.
18. The polycrystalline diamond compact of claim 1 wherein the first cemented carbide portion is substantially free of chromium.
19. A polycrystalline diamond compact, comprising:
a polycrystalline diamond table including a plurality of bonded diamond grains exhibiting diamond-to-diamond bonding therebetween, the plurality of bonded diamond grains defining a plurality of interstitial regions;
a cemented carbide substrate bonded to the polycrystalline diamond table, the cemented carbide substrate including a substantially conical geometry; and
a cemented carbide support including a recess that receives at least a portion of the cemented carbide substrate, the cemented carbide support bonded to the cemented carbide substrate, the cemented carbide support exhibits a concentration of chromium carbide that is greater than that of the cemented carbide substrate.
20. The polycrystalline diamond compact of claim 19 wherein the wear property is erosion resistance.
21. The polycrystalline diamond compact of claim 19 wherein the cemented carbide support exhibits at least one of a corrosion resistance or an erosion resistance that is greater than that exhibited by the cemented carbide substrate.
22. The polycrystalline diamond compact of claim 19 wherein the cemented carbide substrate comprises a first concentration of chromium carbide of about 0.70 weight (“wt”) % to about 0.80 wt % chromium carbide and the cemented carbide support comprises a second concentration of chromium carbide of about 1.0 wt % to about 2.0 wt % chromium carbide.
23. The polycrystalline diamond compact of claim 22 wherein the second concentration of chromium carbide is about 1.1 to about 1.7 times the first concentration of chromium carbide.
24. The polycrystalline diamond compact of claim 19 wherein at least a portion of the polycrystalline diamond table exhibits a chromium concentration of less than about 1.0 weight % (“wt %”).
25. The polycrystalline diamond compact of claim 19 wherein the polycrystalline diamond table is substantially free of chromium.
26. The polycrystalline diamond compact of claim 19 , further comprising an interface between the cemented carbide substrate and the cemented carbide support.
27. The polycrystalline diamond compact of claim 19 wherein the polycrystalline diamond table is integrally formed with the first cemented carbide portion.
28. The polycrystalline diamond compact of claim 19 wherein the polycrystalline diamond table is a preformed polycrystalline diamond table.
29. The polycrystalline diamond compact of claim 19 wherein the polycrystalline diamond table comprises a leached region from which metal-solvent catalyst has been depleted from at least some of the plurality of interstitial regions.
30. The polycrystalline diamond compact of claim 19 wherein the cemented carbide substrate is substantially free of chromium.