Optical modulator utilizing wafer bonding technology

1. A method comprising:

etching a silicon on insulator (SOI) wafer to produce a first part of a silicon waveguide structure on a first surface of the SOI wafer;

preparing a second wafer, the second wafer being a crystalline silicon wafer having a first surface of crystalline silicon and having an implant layer;

bonding the first surface of the second wafer with a thin oxide to the first surface of the SOI wafer using a wafer bonding technique; and

splitting the crystalline silicon wafer at the implant layer, wherein splitting the crystalline silicon wafer results in a layer of crystalline silicon above the oxide bonding layer;

wherein a second part of the silicon waveguide structure is etched in the layer of crystalline silicon.

2. The method of claim 1 , wherein the implant layer of the crystalline silicon wafer is a hydrogen implant layer.

3. The method of claim 1 , wherein splitting the crystalline silicon wafer include splitting utilizing Smart Cut™ technology.

4. The method of claim 1 , wherein the wafer bonding technique is an oxygen plasma assisted technique.

5. The method of claim 1 , wherein etching the first part of the waveguide structure in the SOI wafer includes lithography and reactive ion etching.

6. The method of claim 1 , wherein forming the second part of the silicon waveguide structure includes thinning the layer of crystalline silicon.

7. The method of claim 6 , wherein thinning the layer of crystalline silicon includes one or more of a chemical-mechanical polishing process or an oxidizing and etching process.

8. The method of claim 1 , wherein etching the second part of the waveguide structure includes lithography and reactive ion etching.