Bulk acoustic wave resonator with adjustable resonance frequency and use of such a resonator in the field of telephony
A bulk acoustic wave resonator has an adjustable resonance frequency. A piezoelectric element is provided having first and second electrodes. A switching element is provided in the form of a MEMS structure which is deformable between a first and second position. The switching element forms an additional electrode that is selectively disposed on top of, and in contact with, one of the first and second electrodes. This causes a total thickness of the electrode of the resonator to be changed resulting in a modification of the resonance frequency of the resonator.
1. Bulk acoustic wave resonator with adjustable resonance frequency, comprising:
a piezoelectric element having first and second electrodes; and
a switching element forming an additional electrode having a first position and further having a second position wherein the additional electrode is selectively disposed on top of one of the first and second electrodes in order to increase a total thickness of the electrode resulting in a modification of the resonance frequency of the resonator between a first non-zero resonance frequency and a second, different, non-zero resonance frequency;
wherein the switching element comprises at least one contact bar deformable between the first position in which the additional electrode is separated from said one of the first and second electrodes and the second position in which the additional electrode is applied against said one of the first and second electrodes;
wherein the first and second positions are stable positions; and
wherein the contact bar comprises bistable internal electrodes which maintain the contact bar in the second position in response to heat.
2. Resonator according to claim 1 , wherein the resonator forms part of an integrated circuit, the resonator being disposed on an oxide layer with interposition of an acoustic reflector, and wherein the contact bar forms a bridge extending over the upper one of the first or second electrodes of the piezoelectric resonator.
3. Resonator according to claim 2 , wherein the acoustic reflector is a Bragg mirror.
4. Resonator according to claim 2 , wherein the length of the contact bar is around 400 microns and its width is around 50 microns.
5. Resonator according to claim 2 wherein the bridge is deformed in a center section thereof so as to move the additional electrode into contact with one of the first and second electrodes.
6. Resonator according to claim 2 wherein the bridge comprises a MEMS structure.
7. Resonator according to claim 1 , wherein the bistable internal electrodes comprise resistive heating elements which, when activated, cause a deformation in position of the bar away from the first position and towards the second position.
8. Resonator according to claim 1 wherein the switching element comprises a MEMS structure.
9. The resonator according to claim 1 wherein the contact bar comprises a MEMS structure.
10. Resonator according to claim 1 wherein the switching element comprises a bistable MEMS structure which moves between the first and second positions in response to heat.
11. The resonator of claim 1 formed as an integrated circuit.
12. The resonator of claim 11 wherein the integrated circuit is a mobile telephony integrated circuit, and wherein the first resonant frequency is associated with a first communications frequency of the mobile telephony integrated circuit and the second resonant frequency is associated with a second communications frequency of the mobile telephony integrated circuit.