Semiconductor device and manufacturing method thereof
View Patent ↗An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
1. A semiconductor device comprising:
a gate electrode over a substrate;
a gate insulating film including a first insulating oxide film;
an oxide semiconductor layer on the first insulating oxide film, the oxide semiconductor layer including a channel region;
a pair of conductive layers on the oxide semiconductor layer; and
a second insulating oxide film over the oxide semiconductor layer and the pair of conductive layers, wherein the second insulating oxide film is in contact with a portion of the oxide semiconductor layer, the portion being between the pair of conductive layers,
wherein an upper surface of the oxide semiconductor layer between the pair of conductive layers is etched so that the portion of the oxide semiconductor layer is thinner than portions of the oxide semiconductor layer below the pair of conductive layers, and
wherein the oxide semiconductor layer comprises indium and zinc.
2. The semiconductor device according to claim 1 wherein the oxide semiconductor layer has a crystalline state.
3. The semiconductor device according to claim 1 wherein the oxide semiconductor layer has an amorphous state at least partly.
4. The semiconductor device according to claim 1 wherein the oxide semiconductor layer has a state in which both an amorphous structure and a crystalline structure exist.
5. The semiconductor device according to claim 1 wherein the oxide semiconductor layer contains at least one element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony, bismuth, fluorine, chlorine, bromine, and iodine.
6. The semiconductor device according to claim 1 wherein the oxide semiconductor layer further comprises gallium.
7. The semiconductor device according to claim 1 , wherein the first insulating oxide film comprises silicon oxide or silicon oxynitride.
8. The semiconductor device according to claim 1 , wherein the second insulating oxide film comprises silicon oxide or silicon oxynitride.
9. The semiconductor device according to claim 1 , wherein the first insulating oxide film comprises aluminum oxide.
10. The semiconductor device according to claim 1 , wherein the second insulating oxide film comprises aluminum oxide.
11. A display device comprising:
a gate electrode over a substrate;
a gate insulating film including a first insulating oxide film;
an oxide semiconductor layer on the first insulating oxide film, the oxide semiconductor layer including a channel region;
a pair of conductive layers on the oxide semiconductor layer; and
a second insulating oxide film over the oxide semiconductor layer and the pair of conductive layers, wherein the second insulating oxide film is in contact with a portion of the oxide semiconductor layer, the portion being between the pair of conductive layers,
a pixel electrode over the second insulating oxide film, the pixel electrode being electrically connected to one of the pair of conductive layers,
wherein the oxide semiconductor layer comprises indium and zinc, and
wherein an upper surface of the oxide semiconductor layer between the pair of conductive layers is etched so that the portion of the oxide semiconductor layer is thinner than portions of the oxide semiconductor layer below the pair of conductive layers.
12. The display device according to claim 11 wherein the oxide semiconductor layer has a crystalline state.
13. The display device according to claim 11 wherein the oxide semiconductor layer has an amorphous state at least partly.
14. The display device according to claim 11 wherein the oxide semiconductor layer has a state in which both an amorphous structure and a crystalline structure exist.
15. The display device according to claim 11 wherein the oxide semiconductor layer contains at least one element selected from the group consisting of nitrogen, phosphorus, arsenic, antimony, bismuth, fluorine, chlorine, bromine, and iodine.
16. The display device according to claim 11 wherein the display device is a liquid crystal device.
17. The display device according to claim 11 wherein the display device is an electroluminescence device.
18. The display device according to claim 11 wherein the oxide semiconductor layer further comprises gallium.
19. The display device according to claim 11 , wherein the first insulating oxide film comprises silicon oxide or silicon oxynitride.
20. The display device according to claim 11 , wherein the second insulating oxide film comprises silicon oxide or silicon oxynitride.
21. The display device according to claim 11 , wherein the first insulating oxide film comprises aluminum oxide.
22. The display device according to claim 11 , wherein the second insulating oxide film comprises aluminum oxide.