Semiconductor light emitting device

1. A semiconductor light emitting device comprising:

a light emitting structure including a plurality of compound semiconductor layers;

an electrode layer disposed under the light emitting structure;

an electrode disposed on the light emitting structure;

a conductive support member disposed under the electrode layer;

a conductive layer disposed between the light emitting structure and the conductive support member; and

an insulating layer disposed between the conductive support member and the light emitting structure,

wherein the electrode layer is in contact with a first area of a lower surface of the light emitting structure and the conductive layer is in contact with a second area of the lower surface of the light emitting structure,

wherein the conductive layer includes a material different than a material of the electrode layer,

wherein the conductive layer is located at a peripheral area of the lower surface of the light emitting structure,

wherein the insulating layer is spaced apart from the light emitting structure,

wherein the plurality of compound semiconductor layers includes a first conductive layer, and a second conductive layer disposed between the first conductive semiconductor layer and the electrode layer, and

wherein the conductive layer has an open area between the second conductive semiconductor layer and the conductive support member, the conductive layer formed in a shape of a loop.

2. The semiconductor light emitting device of claim 1 , wherein the insulating layer is disposed between an outer portion of the conductive layer and the conductive support member, and

wherein the insulating layer is spaced apart from the lower surface of the light emitting structure.

3. The semiconductor light emitting device of claim 1 , wherein a lower surface of the insulating layer is physically in contact with a surface of the conductive support member.

4. The semiconductor light emitting device of claim 1 , wherein an outer side of the insulating layer is located outwardly from a side of the conductive support member.

5. The semiconductor light emitting device of claim 1 , wherein the insulating layer has a thickness equal to or less than a thickness of the conductive support member.

6. The semiconductor light emitting device of claim 1 , wherein the electrode layer comprises at least one of an ohmic contact layer, a reflective layer, and an adhesive layer.

7. The semiconductor light emitting device of claim 1 , wherein the conductive layer comprises at least one selected from the group consisting of indium tin oxide (ITO), indium zinc oxide (IZO), indium zinc tin oxide (IZTO), indium aluminum zinc oxide (IAZO), indium gallium zinc oxide (IGZO), indium gallium tin oxide (IGTO), aluminum zinc oxide (AZO), antimony tin oxide (ATO), gallium zinc oxide (GZO), IrOx, RuOx, RuOx/ITO, Ni/IrOx/Au, and Ni/IrOx/Au/ITO.

8. The semiconductor light emitting device of claim 1 , wherein an inner portion of the conductive layer is disposed between a lower surface of an outer portion of the electrode layer and the lower surface of the light emitting structure.

9. The semiconductor light emitting device of claim 8 , wherein a lower surface of the inner portion of the conductive layer is in contact with an upper surface of the electrode layer.

10. The semiconductor light emitting device of claim 8 , wherein the light emitting structure comprises:

an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer.

11. A semiconductor light emitting device comprising:

a light emitting structure including a first conductive semiconductor layer, a second conductive semiconductor layer under the first conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer;

a conductive support member disposed under the second conductive semiconductor layer;

an electrode layer including a reflective electrode disposed between the second conductive semiconductor layer and the conductive support member;

an insulating layer disposed between the second conductive semiconductor layer and the conductive support member;

a conductive layer disposed between the second conductive semiconductor layer and the support member; and

an electrode disposed on the first conductive semiconductor layer,

wherein the insulating layer is disposed between the conductive layer and the conductive support member,

wherein the insulating layer is spaced apart from a lower surface of the light emitting structure, and

wherein the conductive layer has an open area between the second conductive semiconductor layer and the conductive support member, the conductive layer formed in a shape of a loop.

12. The semiconductor light emitting device of claim 11 , wherein the conductive layer includes a light-transmissive material.

13. The semiconductor light emitting device of claim 11 , wherein the conductive layer makes a contact with the electrode layer and the second conductive semiconductor layer.

14. The semiconductor light emitting device of claim 11 , wherein the insulating layer is aligned on a plane different from an lower surface of the conductive support member.

15. The semiconductor light emitting device of claim 11 , wherein the insulating layer has a thickness of about 10 μm to about 100 μm and has a thickness less than a thickness of the conductive support member.

16. The semiconductor light emitting device of claim 11 , wherein the insulating layer has a width of about 10 μm to about 20 μm, and the width of the insulating layer is smaller than a width of the conductive layer.

17. The semiconductor light emitting device of claim 11 , wherein the electrode layer contacts at least one side of the insulating layer, and

wherein the electrode layer is disposed in the open area of the conductive layer.

18. A semiconductor light emitting device comprising:

a light emitting structure including a plurality of compound semiconductor layers;

a support member disposed under the light emitting structure;

an electrode disposed on the light emitting structure;

an electrode layer disposed between a lower surface of the light emitting structure and the support member;

a conductive layer disposed between of a lower surface of the light emitting structure and the support member; and

an insulating layer disposed between the conductive layer and the support member under the light emitting structure,

wherein the support member has a thickness thicker than a thickness of the insulating layer,

wherein the insulating layer is spaced apart from the lower surface and an outer sidewall of the light emitting structure, and

wherein the conductive layer has an open area between the light emitting structure and the support member, the conductive layer formed in a shape of a loop.

19. The semiconductor light emitting device of claim 18 , wherein the conductive layer includes a light-transmissive material, and the support member includes a conductive material.

20. The semiconductor light emitting device of claim 18 , wherein the conductive layer and the insulating layer are disposed between the light emitting structure and the support member, and

wherein the conductive layer is located at an edge area of the lower surface of the light emitting structure which is adjacent to an outer sidewall of the light emitting structure.