Semiconductor device
In a semiconductor device in which a diode and an IGBT are formed in a main region of a same semiconductor substrate, in order to obtain a sufficiently large sense IGBT current in a stable manner, a sense region is provided with a first region in which a distance from an end of a main cathode region on a side of the sense region in a plan view of the semiconductor substrate is equal to or longer than 615 μm. Alternatively, in order to obtain a sufficiently large sense diode current in a stable manner, the sense region is provided with a second region in which a distance from the main cathode region in a plan view of the semiconductor substrate is equal to or shorter than 298 μm. The sense region may be provided with both the first region and the second region.
1. A semiconductor device comprising a semiconductor substrate including a main region and a sense region, the sense region being smaller than the main region in a plan view of the semiconductor substrate, wherein
the main region comprises a main diode and a main IGBT,
the main diode comprises:
a first conductivity type main anode region formed on an upper surface of the semiconductor substrate,
a second conductivity type main diode drift region formed on a lower side of the main anode region, and
a second conductivity type main cathode region formed on a lower side of the main diode drift region and on a lower surface of the semiconductor substrate;
the main IGBT comprises:
a first conductivity type main collector region formed on a lower surface of the semiconductor substrate,
a second conductivity type main drift region formed on an upper side of the main collector region,
a first conductivity type main body region formed on an upper side of the main drift region and on an upper surface of the semiconductor substrate,
a second conductivity type main emitter region formed on a part of an upper surface of the main body region, and
a main insulated gate electrode formed from an upper surface of the main emitter region to the depth in which the main body region contacting with the main drift region; and
the sense region comprises:
a first conductivity type sense collector region formed on a part of a lower surface of the semiconductor substrate,
a second conductivity type sense drift region formed on an upper side of the sense collector region,
a first conductivity type sense body region formed on an upper side of the sense drift region and on an upper surface of the semiconductor substrate,
a second conductivity type sense emitter region formed on a part of an upper surface of the sense body region, and
a sense insulated gate electrode formed from an upper surface of the sense emitter region to the depth in which the sense body region contacting with the sense drift region,
the sense region includes a first region, in which a distance from the main cathode region to the sense emitter region in the plan view of the semiconductor substrate being equal to or longer than 615 μm.
2. The semiconductor device according to claim 1 , further comprising:
a second region, in which a distance from the main cathode region to the sense emitter region in the plan view of the semiconductor substrate being equal to or shorter than 298 μm.
3. The semiconductor device according to claim 2 , wherein
the sense drift region, the sense body region, the sense emitter region, and the sense insulated gate electrode are formed sequentially from the first region to the second region in the plan view of the semiconductor substrate.
4. The semiconductor device according to claim 2 , further comprising:
a diffusion layer formed in at least a part of a region between the first region and the second region, the diffusion layer extending from the upper surface of the semiconductor substrate in a depth direction.
5. The semiconductor device according to claim 4 , wherein
the diffusion layer is formed in a region of which distance from the main cathode region in the plan view of the semiconductor substrate is longer than 298 μm and shorter than 615 μm.
6. A semiconductor device comprising a semiconductor substrate including a main region and a sense region, the sense region being smaller than the main region in a plan view of the semiconductor substrate, wherein
the main region comprises a main diode and a main IGBT,
the main diode comprises:
a first conductivity type main anode region formed on an upper surface of the semiconductor substrate,
a second conductivity type main diode drift region formed on a lower side of the main anode region, and
a second conductivity type main cathode region formed on a lower side of the main diode drift region and on a lower surface of the semiconductor substrate;
the main IGBT comprises:
a first conductivity type main collector region formed on a lower surface of the semiconductor substrate,
a second conductivity type main drift region formed on an upper side of the main collector region,
a first conductivity type main body region formed on an upper side of the main drift region and on an upper surface of the semiconductor substrate,
a second conductivity type main emitter region formed on a part of an upper surface of the main body region, and
a main insulated gate electrode formed from an upper surface of the main emitter region to the depth in which the main body region contacting with the main drift region; and
the sense region comprises:
a first conductivity type sense collector region formed on a part of a lower surface of the semiconductor substrate,
a second conductivity type sense drift region formed on an upper side of the sense collector region,
a first conductivity type sense body region formed on an upper side of the sense drift region and on an upper surface of the semiconductor substrate,
a second conductivity type sense emitter region formed on a part of an upper surface of the sense body region, and
a sense insulated gate electrode formed from an upper surface of the sense emitter region to the depth in which the sense body region contacting with the sense drift region,
the sense region includes a second region, in which a distance from the main cathode region to the sense emitter region in a plan view of the semiconductor substrate being equal to or shorter than 298 μm.