MEMS resonator devices
Embodiments are related to micro-electromechanical system (MEMS) devices, systems and methods. In one embodiment, a MEMS resonating device comprises a resonator element configured to provide timing; and at least one passive temperature compensation structure arranged on the resonator element.
1. A MEMS resonating device comprising:
a resonator element configured to provide timing and having a frequency range of about 10 megahertz (MHz) to about 80 MHz; and
at least one passive temperature compensation structure arranged on the resonator element, wherein the MEMS resonating device has a thermal coefficient of frequency in a range of about −500 parts per million (ppm) to about 0 in a temperature range of about −30 degrees Celsius (C) to about 130 degrees C.,
wherein the MEMS resonating device is configured to provide both longitudinal resonance and flexural vibrations.
2. The MEMS resonating device of claim 1 , wherein the at least one passive temperature compensation structure comprises oxide.
3. The MEMS resonating device of claim 2 , wherein the at least one passive temperature compensation structure comprises an oxide-filled structure.
4. The MEMS resonating device of claim 1 , further comprising at least one passive frequency compensation structure arranged on the resonator element.
5. The MEMS resonating device of clam 1 , wherein the MEMS resonating device is configured to provide the longitudinal resonance and the flexural vibrations simultaneously.
6. The MEMS resonating device of claim 1 , further comprising an anchor region coupled to the resonator element.
7. The MEMS resonating device of claim 6 , wherein the anchor region is configured to provide flexural vibrations.
8. The MEMS resonating device of claim 7 , wherein the anchor region is coupled to a central portion of the resonator element.
9. The MEMS resonating device of claim 6 , wherein the anchor region comprises a plurality of anchors coupled to the resonator element.
10. The MEMS resonating device of claim 1 , further comprising an active frequency trimming element coupled to the resonator element.
11. The MEMS resonating device of claim 10 , wherein the active frequency trimming element is configured to trim by capacitive pulling.
12. The MEMS resonating device of claim 10 , wherein the active frequency trimming element is configured to trim by DC bias voltage application.
13. The MEMS resonating device of claim 1 , wherein the resonator element has a frequency range of about 26 megahertz (MHz) to about 80 MHz.
14. The MEMS resonating device of claim 1 , wherein the resonator element is configured to resonate in a longitudinal mode.
15. The MEMS resonating device of claim 1 , wherein the MEMS resonating device has a thermal coefficient of frequency in a range of about −300 ppm to about 0 in a temperature range of about −30 degrees C. to about 130 degrees C.
16. The MEMS resonating device of claim 1 , further comprising a drive electrode spaced apart from the resonator element by a gap of about 100 nanometers (nm) or less.
17. A MEMS resonating device comprising:
a resonator element configured to resonate at a frequency of at least about 10 megahertz (MHz); and
a passive frequency compensation structure arranged on the resonator element, wherein the MEMS resonating device has a thermal coefficient of frequency in a range of about −500 parts per million (ppm) to about 0 in a temperature range of about −30 degrees Celsius (C) to about 130 degrees C.,
wherein the MEMS resonating device is configured to provide both longitudinal resonance and flexural vibrations.
18. The MEMS resonating device of claim 17 , further comprising an anchor region coupled to the resonator element.
19. The MEMS resonating device of claim 18 , wherein the MEMS resonating device is configured to provide longitudinal resonance by the resonator element and flexural vibrations by the anchor region.
20. The MEMS resonating device of claim 19 , wherein the anchor region is coupled to a central portion of the resonator element.
21. The MEMS resonating device of claim 18 , wherein the anchor region comprises a plurality of anchors.
22. The MEMS resonating device of claim 17 , further comprising an active frequency trimming element coupled to the resonator element.
23. The MEMS resonating device of claim 22 , wherein the active frequency trimming element is configured to trim by capacitive pulling.
24. The MEMS resonating device of claim 22 , wherein the active frequency trimming element is configured to trim by DC bias voltage application.
25. The MEMS resonating device according to claim 17 , further comprising at least one passive temperature compensation structure arranged on the resonator element.
26. The MEMS resonating device of claim 17 , wherein the frequency is in a range of about 26 MHz to about 80 MHz.
27. The MEMS resonating device of claim 17 , further comprising an electrode spaced apart from the resonator element by a gap of about 100 nanometers (nm) or less.
28. The MEMS resonating device of claim 17 , wherein the MEMS resonating device has a thermal coefficient of frequency in a range of about −300 ppm to about 0 in a temperature range of about −30 degrees C. to about 130 degrees C.
29. The MEMS resonating device of claim 17 , wherein the MEMS resonating device is configured to provide the longitudinal resonance and the flexural vibrations simultaneously.