Materials for N-doping the electron-transporting layers in organic electronic components
The invention pertains to new materials based on sterically inhibited donor arylboranes for the improvement of electron injection and electron transport in organic electronic components like organic light-emitting diodes (OLED's), organic field effect transistors (OFET's), and on organic photovoltaics based components, in particular, organic solar cells.
1. Material for n-doping of an electron-transporting layer in organic electronic components, wherein said material comprises at least one sterically inhibited donor arylboranes of substructures 1 and 2,
wherein:
Do represents an electron donor,
R 1 is sulfur and forms a bridge to the neighboring donor substituent Do,
R 2 is H or methyl, and
R 3 and R 4 can be hydrogen or form a joint annelated aromatic ring.
2. Material according to claim 1 with Do in one of substructures 1 or 2 selected from a group of functional groups comprising nitrogen with an aromatic substituent.
3. Method for n-doping an electron-transporting layer of an organic electronic component, the method comprising n-doping the electron-transporting layer with a material according to claim 1 .
4. Organic electronic component comprised of at least two electrodes with an active layer, wherein located between at least one electrode and the active layer is an electron-transporting layer doped with a material according to claim 1 .
5. Material according to claim 1 , comprising the following sterically inhibited donor arylborane structure:
6. Material according to claim 1 with Do in one of substructures 1 or 2 selected from a group of functional groups comprising nitrogen with a phenyl or naphthyl substituent.