Light emitting element, light emitting device and semiconductor device
View Patent ↗It is an object of the present invention to provide a semiconductor device, in particular, a light emitting element which can be easily manufactured with a wet method. One feature of the invention is a light emitting device including a transistor and a light emitting element. In the light emitting element, an organic layer, a light emitting layer, and a second electrode are sequentially formed over a first electrode, and the transistor is electrically connected to the light emitting element through a wiring. Here, the wiring contains aluminum, carbon, and titanium. The organic layer is formed by a wet method. The first electrode which is in contact with the organic layer is formed from indium tin oxide containing titanium oxide.
1. A light emitting device comprising:
a substrate;
a transistor over the substrate;
a wiring electrically connected to the transistor; and
a light emitting element over the wiring, the light emitting element comprising:
a first conductive layer comprising titanium oxide, indium oxide, and zinc oxide;
an organic layer over and in contact with the first conductive layer;
a light emitting layer over the organic layer; and
a second conductive layer over the light emitting layer, wherein the first conductive layer is electrically connected to the transistor through the wiring,
wherein the first conductive layer transmits visible light,
wherein the second conductive layer transmits visible light, and
wherein the titanium oxide is contained in the first conductive layer with a content of from 1 wt % to 20 wt %.
2. The light emitting device according to claim 1 , wherein the titanium oxide is contained in the first conductive layer with a content of from 2 wt@ to 10 wt %.
3. The light emitting device according to claim 1 , wherein the first conductive layer is in direct contact with the wiring, and
wherein the wiring comprises aluminum and at least one of titanium and carbon.
4. The light emitting device according to claim 3 , wherein titanium contained in the wiring is contained with a content of from 0.1 wt % to 5 wt % to aluminum.
5. The light emitting device according to claim 3 , wherein titanium contained in the wiring is contained with a content of from 0.1 wt % to 5 wt % to aluminum.
6. An electronic device including the light emitting device according to claim 1 used as a display portion.
7. The light emitting device according to claim 1 , the oxide contained in the first conductive layer is contained with a content of from 2 wt % to 20 wt %.
8. The light emitting device according to claim 1 , the first conductive layer contains silicon oxide with a content of from 3 wt % to 6 wt %.
9. A light emitting device comprising:
a substrate;
a transistor over the substrate;
a wiring electrically connected to the transistor; and
a light emitting element over the wiring, the light emitting element comprising:
a first conductive layer comprising indium tin oxide and titanium oxide;
an organic layer over and in contact with the first conductive layer;
a light emitting layer over the organic layer; and
a second conductive layer over the light emitting layer,
wherein the first conductive layer is electrically connected to the transistor through the wiring,
wherein the first conductive layer transmits visible light,
wherein the second conductive layer transmits visible light, and
wherein the titanium oxide is contained in the first conductive layer with a content of from 1 wt % to 20 wt %.
10. The light emitting device according to claim 9 , wherein the titanium oxide is contained in the first conductive layer with a content of from 2 wt % to 10 wt %.
11. The light emitting device according to claim 9 , wherein the first conductive layer is in direct contact with the wiring, and
wherein the wiring comprises aluminum and at least one of titanium and carbon.
12. The light emitting device according to claim 11 , wherein titanium contained in the wiring is contained with a content of from 0.1 wt % to 5 wt % to aluminum.
13. The light emitting device according to claim 11 , wherein titanium contained in the wiring is contained with a content of from 0.1 wt % to 5 wt % to aluminum.
14. An electronic device including the light emitting device according to claim 9 used as a display portion.
15. The light emitting device according to claim 2 , the first conductive layer contains silicon oxide with a content of from 3 wt % to 6 wt %.
16. A light emitting device comprising:
a substrate;
a transistor over the substrate;
a wiring electrically connected to the transistor;
an interlayer insulating layer over the wiring; and
a light emitting element over the interlayer insulating layer, the light emitting element comprising:
a first conductive layer comprising indium tin oxide and titanium oxide;
an organic layer over and in contact with the first conductive layer;
a light emitting layer over the organic layer; and
a second conductive layer over the light emitting layer,
wherein the first conductive layer is electrically connected to the transistor through the wiring,
wherein the first conductive layer transmits visible light,
wherein the second conductive layer transmits visible light, and
wherein the titanium oxide is contained in the first conductive layer with a content of from 1 wt % to 20 wt %.
17. The light emitting device according to claim 16 , wherein the titanium oxide is contained in the first conductive layer with a content of from 2 wt % to 10 wt %.
18. The light emitting device according to claim 16 , wherein the first conductive layer is in direct contact with the wiring, and
wherein the wiring comprises aluminum and at least one of titanium and carbon.
19. The light emitting device according to claim 18 , wherein titanium contained in the wiring is contained with a content of from 0.1 wt % to 5 wt % to aluminum.
20. The light emitting device according to claim 18 , wherein titanium contained in the wiring is contained with a content of from 0.1 wt % to 5 wt % to aluminum.
21. An electronic device including the light emitting device according to claim 16 used as a display portion.
22. The light emitting device according to claim 3 , the first conductive layer contains silicon oxide with a content of from 3 wt % to 6 wt %.