Semiconductor light-emitting element

1. A semiconductor light-emitting element comprising:

a support substrate;

a semiconductor light-emitting stacked body including a first semiconductor layer formed on the support substrate, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer;

a first electrode including at least one linear first electrode piece that is disposed on a surface of the first semiconductor layer close to the support substrate and in ohmic contact with the first semiconductor layer;

a second electrode including at least one linear second electrode piece that is disposed on a surface of the second semiconductor layer and in ohmic contact with the second semiconductor layer; and

a plurality of conical projections formed on the second semiconductor layer, wherein

the first electrode piece and the second electrode piece are disposed so as not to overlap with each other in a stacked direction of the semiconductor light-emitting stacked body but to be parallel with each other when viewed from above, and

the plurality of conical projections disposed between the first and second electrode pieces are disposed in parallel with each other with extension axes that form an angle of ±26 degrees with respect to an extension direction of the first and second electrode pieces.

2. The semiconductor light-emitting element according to claim 1 , wherein an angle formed between the axis of the plurality of conical projections and the surface of the support substrate is 30 degrees or larger and 70 degrees or smaller.

3. The semiconductor light-emitting element according to claim 1 , wherein the first electrode piece and the second electrode piece each include a plurality of electrode pieces in parallel to two opposed sides of the support substrate, and

respective axes of the plurality of conical projections form an angle of ±26 degrees with the extension direction of the first electrode piece and the second electrode piece.

4. The semiconductor light-emitting element according to claim 2 , wherein the first electrode piece and the second electrode piece each include a plurality of electrode pieces in parallel to two opposed sides of the support substrate, and

respective axes of the plurality of conical projections form an angle of ±26 degrees with the extension direction of the first electrode piece and the second electrode piece.

5. A method for producing a semiconductor light-emitting element, comprising:

forming a semiconductor light-emitting stacked body including a first semiconductor layer formed on a growth substrate, an active layer formed on the first semiconductor layer, and a second semiconductor layer formed on the active layer;

forming a second electrode including at least one linear second electrode piece on a surface of the second semiconductor layer so as to be in ohmic contact with the second semiconductor layer;

joining the semiconductor light-emitting stacked body having the second electrode formed therein with a support substrate;

removing the growth substrate from the semiconductor light-emitting stacked body;

forming a first electrode including at least one linear first electrode piece on a surface of the first semiconductor layer so as to be in ohmic contact with the first semiconductor layer; and

forming a plurality of conical projections on an area of the first semiconductor layer where the first electrode is not formed, wherein

during forming the first electrode, the first electrode piece and the second electrode piece are disposed so as not to overlap with each other in a stacked direction of the semiconductor light-emitting stacked body and to be parallel with each other when viewed from above,

during forming the plurality of conical projections, the plurality of conical projections disposed between the first and second electrode pieces disposed in parallel with each other have extension axes that form an angle of ±26 degrees with respect to the extension direction of the first and second electrode pieces.

6. The method for producing a semiconductor light-emitting element according to claim 5 , wherein forming the plurality of conical projections is performed by forming the projections on the first semiconductor layer by anisotropic etching.

7. The method for producing a semiconductor light-emitting element according to claim 6 , wherein

the growth substrate is a GaAs substrate inclined with an angle of 10 degrees or larger and 25 degrees or smaller from a {100} plane;

the semiconductor light-emitting stacked body, the first semiconductor layer, and the second semiconductor layer are formed from an AlGaInP-based material;

the forming of a plurality of conical projections is performed using an etching solution including HBr, HCl, HF, and halide compounds on an exposed surface of the second semiconductor layer after removing the growth substrate according to a difference in etching range between a plane direction of {111} A plane and a plane direction of {111} B plane.