IP Library Granted Patent US 8,526,246
Granted Patent B2
US 8,526,246 · App. 13/370,035 · Granted Sep 3, 2013

Write circuitry for hierarchical memory architectures

Inventors: Siddharth Gupta (Greater Noida, IN); Nitin Jain (Greater Noida, IN); Anand Mishra (Greater Noida, IN)
Assignee: STMicroelectronics International N.V.
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Quick Facts
Patent No.
US 8,526,246
App. No.
13/370,035
Granted
Sep 3, 2013
Kind
B2
Abstract

A memory architecture includes a plurality of local input and output circuitries, with each local input and output circuitry associated with at least one memory bank. The memory architecture also includes a global input and output circuitry, which includes a plurality of global sub-write circuitries, is coupled to the plurality of local input and output circuitries One global sub-write circuitry is enabled and provides a write-data to a selected local input and output circuitry.

Claims (14)

1. A global input and output circuitry comprising:

a global clock generation circuitry to generate a global write clock signal; and

a global write circuitry coupled to the global clock generation circuitry, wherein the global write circuitry is configured to transfer a write-data, the global write circuitry comprising:

a full transmission gate to facilitate transfer of the write-data based on the global write clock signal;

a plurality of global sub-write circuitries, each global sub-write circuitry comprising:

a storage element coupled to the full transmission gate, wherein the storage element stores the write-data; and

a decoupling circuit configured to disable the full transmission gate based on the write-data stored in the storage element.

2. The global input and output circuitry as claimed in claim 1 , wherein the decoupling circuit receives inputs from a global write true data bus and a global write false data bus to disable the full transmission gate.

3. The global input and output circuitry as claimed in claim 1 , wherein each of the global sub-write circuitry comprises an odd-delay circuit to reset the storage element.

4. The global input and output circuitry as claimed in claim 3 , wherein the odd-delay circuit is programmable.

5. The global input and output circuitry as claimed in claim 1 , wherein each of the global sub-write circuitry comprises a pre-charging circuit.

6. The global input and output circuitry as claimed in claim 5 , wherein the pre-charging circuit is programmable.

7. The global input and output circuitry as claimed in claim 1 , wherein the full transmission gate is configured to select the global sub-write circuitry for writing the write-data.

8. The global input and output circuitry as claimed in claim 1 , wherein the storage element comprises a reset-set latch.

Continuity (2)
Division 12641102 · Dec 17, 2009
Related Publication 20120140582A1 · Jun 7, 2012