Memory component having an electrical contact free of a metal layer
According to embodiments of the present invention, a memory component is provided. The memory component includes a storage component comprising a resistance changing material; and an electrical contact coupled to the storage component, wherein the electrical contact comprises silicide, wherein the memory component is free of a metal layer between the storage component and the electrical contact, and wherein the electrical contact is free of a metal layer.
1. A memory component, comprising:
a storage component comprising a resistance changing material;
an electrical contact coupled to the storage component, wherein the electrical contact comprises silicide; and
a dielectric layer disposed within the storage component;
wherein the memory component is free of a metal layer between the storage component and the electrical contact, and
wherein the electrical contact is free of a metal layer.
2. The memory component as claimed in claim 1 , further comprising a further dielectric layer disposed on at least one side of the storage component.
3. The memory component as claimed in claim 1 , wherein the resistance changing material comprises a phase change material.
4. The memory component as claimed in claim 3 , wherein the phase change material comprises a chalcogenide or an alloy of chalcogenides.
5. The memory component as claimed in claim 3 , wherein the phase change material further comprises a dopant.
6. A method of forming a memory component, the method comprising:
forming an electrical contact, the electrical contact comprising silicide and is free of a metal layer;
depositing a storage component over the electrical contact, the storage component comprising a resistance changing material; and
forming a dielectric layer within the storage component;
wherein the method is free of forming a metal layer between the storage component and the electrical contact.
7. A memory component, comprising:
a storage component comprising a resistance changing material; and
an electrical contact coupled to the storage component, wherein the electrical contact comprises silicide, and
wherein the memory component is free of a metal layer between the storage component and the electrical contact,
wherein the electrical contact is free of a metal layer, and
wherein the memory component further comprises a dielectric layer disposed over a portion of the electrical contact, wherein the portion overlaps with the entire storage component.
8. The memory component as claimed in claim 7 , wherein the dielectric layer is disposed within the storage component or in between the storage component and the electrical contact.