Method and apparatus for thermal analysis of through-silicon via (TSV)
Some embodiments of the invention provide a method for performing thermal analysis of an integrated circuit (“IC”) design layout. The IC design layout includes several wiring layers in some embodiments. The IC design layout includes a substrate that has at least one through-silicon via (“TSV”). The method divides the IC design layout into a set of elements. The method identifies a temperature distribution for the IC design layout by using the set of elements. In some embodiments, at least one element includes a metal component and a non-metal component. The non-metal component is silicon in some embodiments, and a dielectric in other embodiments.
1. A non-transitory computer readable medium storing a computer program for performing thermal analysis of an integrated circuit (“IC”) design layout, the computer program executable by at least one processor, the computer program comprising sets of instructions for:
dividing the IC design layout into a set of elements, said IC design layout comprising a wiring layer and a substrate, said substrate comprising a non-metal component and a metal component, said metal component comprising a set of through-silicon vias (“TSVs”), each TSV extending through the substrate and conducting an electrical current, wherein at least one element comprises a combination of a portion of a TSV and a portion of the non-metal component;
computing an effective thermal conductivity value for each element based on an amount of metal component in each element; and
identifying a temperature distribution for the IC design layout based on the computed effective thermal conductivity values.
2. The non-transitory computer readable medium of claim 1 , wherein the non-metal component is a silicon component.
3. The non-transitory computer readable medium of claim 1 , wherein at least one element comprises a combination of at least two separate portions of the metal component and the portion of the non-metal component.
4. The non-transitory computer readable medium of claim 1 , wherein the sets of instructions for computing the effective thermal conductivity value comprises sets of instructions for using an element model to define a representative element for each element.
5. A non-transitory computer readable medium storing a computer program for performing thermal analysis of an integrated circuit (“IC”) design layout, the computer program executable by at least one processor, the computer program comprising sets of instructions for:
dividing the IC design layout into a set of elements, said IC design layout comprising a wiring layer and a substrate, said substrate comprising a set of through-silicon vias (“TSVs”), each TSV extending through the substrate and conducting an electrical current from the wiring layer to circuits outside of the IC;
computing conductivity values for each element by using parameterized functions; and
identifying a temperature distribution for the IC design layout based on the computed conductivity values.
6. The non-transitory computer readable medium of claim 5 , wherein least one element comprises a combination of a metal component and a non-metal component of the substrate.
7. The non-transitory computer readable medium of claim 5 , wherein at least one element comprises a combination of at least two metal components and a non-metal component of the substrate.
8. The non-transitory computer readable medium of claim 5 , wherein the parameterized functions are obtained by carrying out a symbolic integration of a set of finite element equations for a set of metal location parameters.
9. The non-transitory computer readable medium of claim 5 , wherein the parameterized functions use coordinates of the TSV to describe how heat flow at a first node of the element is affected by a temperature change at a second node of the element, each node representing a different vertex of the element.
10. The non-transitory computer readable medium of claim 9 , wherein at least one element comprises a combination of at least two metal components and a non-metal component of the substrate.
11. A system comprising:
a processor for executing sets of instructions; and
a memory for storing a computer program for performing thermal analysis of an integrated circuit (“IC”) design layout, the computer program comprising sets of instructions for:
dividing the IC design layout into a set of elements, said IC design layout comprising a wiring layer and a substrate, said substrate comprising a non-metal component and a metal component, said metal component comprising a set of through-silicon vias (“TSVs”), each TSV extending through the substrate and conducting an electrical current, wherein at least one element comprises a combination of a portion of a TSV and a portion of the non-metal component;
computing an effective thermal conductivity value for each element based on an amount of metal component in each element; and
identifying a temperature distribution for the IC design layout based on the computed effective thermal conductivity values.
12. The system of claim 11 , wherein a portion of the metal component is a particular TSV.
13. The system of claim 11 , wherein a portion of the metal component is a portion of a particular TSV.
14. The system of claim 11 , wherein at least one element comprises a combination of at least two separate portions of the metal component and the portion of the non-metal component.
15. The system of claim 11 , wherein the sets of instructions for computing the effective thermal conductivity value comprises sets of instructions for using an element model to define a representative element for each element.
16. A system comprising:
a processor for executing sets of instructions; and
a memory for storing a computer program for performing thermal analysis of an integrated circuit (“IC”) design layout, the computer program comprising sets of instructions for:
dividing the IC design layout into a set of elements, said IC design layout comprising a wiring layer and a substrate, said substrate comprising a set of through-silicon vias (“TSVs”), each TSV extending through the substrate and conducting an electrical current from the wiring layer to circuits outside of the IC;
computing conductivity values for each element by using parameterized functions; and
identifying a temperature distribution for the IC design layout based on the computed conductivity values.
17. The system of claim 16 , wherein least one element comprises a combination of a metal component and a non-metal component of the substrate.
18. The system of claim 16 , wherein the parameterized functions are obtained by carrying out a symbolic integration of a set of finite element equations for a set of metal location parameters.
19. The system of claim 16 , wherein the parameterized functions use coordinates of the TSV to describe how heat flow at a first node of the element is affected by a temperature change at a second node of the element, each node representing a different vertex of the element.
20. The system of claim 19 , wherein at least one element comprises a combination of at least two metal components and a non-metal component of the substrate.