Variable resistance memory device and method of forming the same
Provided are a variable resistance memory device and a method of forming the same. The variable resistance memory device may include a substrate, a plurality of bottom electrodes on the substrate, and a first interlayer insulating layer including a trench formed therein. The trench exposes the bottom electrodes and extends in a first direction. The variable resistance memory device further includes a top electrode provided on the first interlayer insulating layer and extending in a second direction crossing the first direction and a plurality of variable resistance patterns provided in the trench and having sidewalls aligned with a sidewall of the top electrode.
1. A variable resistance memory device comprising:
a substrate;
a plurality of bottom electrodes on the substrate;
a first interlayer insulating layer including a trench formed therein, the trench exposing the bottom electrodes and extending in a first direction;
a top electrode provided on the first interlayer insulating layer and extending in a second direction crossing the first direction; and
a plurality of variable resistance patterns provided in the trench and having sidewalls aligned with a sidewall of the top electrode; and
a diffusion preventing pattern between the variable resistance patterns and the top electrode.
2. A variable resistance memory device, comprising:
a substrate;
a plurality of bottom electrodes on the substrate;
a plurality of variable resistance lines provided on the bottom electrodes and extending in a first direction wherein the variable resistance lines are provided inside a trench exposing the bottom electrodes extending in the first direction;
a top electrode provided on the variable resistance lines and extending in a second direction crossing the first direction; and
a diffusion preventing pattern between the variable resistance lines and the top electrode.
3. The variable resistance memory device of claim 2 , wherein the bottom electrodes have a top surface of a line shape or an arc shape of which a length in the second direction is longer than a length in the first direction.
4. A variable resistance memory device, comprising:
a substrate;
a plurality of bottom electrodes on the substrate;
a first interlayer insulating layer including a trench formed therein, the trench exposing the bottom electrodes and extending in a first direction;
a top electrode provided on the first interlayer insulating layer and extending in a second direction crossing the first direction; and
a plurality of variable resistance patterns provided in the trench and having sidewalls aligned with a sidewall of the top electrode,
wherein the variable resistance patterns are an isolated type structure in which the variable resistance patterns are divided in the first direction and in the second direction.
5. The variable resistance memory device of claim 4 , wherein the aligned sidewalls of the variable resistance patterns are parallel to the second direction.
6. The variable resistance memory device of claim 4 , wherein the trench exposes two bottom electrodes adjacent to each other along the second direction.
7. The variable resistance memory device of claim 4 , wherein the plurality of variable resistance patterns are provided inside the trench.
8. The variable resistance memory device of claim 4 , wherein top surfaces of the plurality of variable resistance patterns are substantially coplanar with a top surface of the first interlayer insulating layer.
9. The variable resistance memory device of claim 4 , wherein the variable resistance patterns have a second directional longitudinal section of a U shape, an L shape or a square shape.
10. The variable resistance memory device of claim 9 , further comprising a heat loss preventing pattern on the variable resistance patterns of a U shape or an L shape.