Materials, systems and methods for optoelectronic devices
A photodetector is described along with corresponding materials, systems, and methods. The photodetector comprises an integrated circuit and at least two optically sensitive layers. A first optically sensitive layer is over at least a portion of the integrated circuit, and a second optically sensitive layer is over the first optically sensitive layer. Each optically sensitive layer is interposed between two electrodes. The two electrodes include a respective first electrode and a respective second electrode. The integrated circuit selectively applies a bias to the electrodes and reads signals from the optically sensitive layers. The signal is related to the number of photons received by the respective optically sensitive layer.
1. A photodetector comprising:
a plurality of optically sensitive layers including a first optically sensitive layer and a second optically sensitive layer, the first optically sensitive layer overlying at least a portion of a first side of an integrated circuit and the second optically sensitive layer overlying at least a portion of a second side of the first optically sensitive layer;
a plurality of vertical electrodes positioned so the plurality of optically sensitive layers is interposed between a respective first electrode and a respective second electrode of the plurality of vertical electrodes, each respective first electrode being positioned laterally relative to at least a portion of the respective second electrode, the respective second electrode for the first optically sensitive layer and the second optically sensitive layer comprising a common electrode disposed around the first electrode; and
a coupling between the integrated circuit and the plurality of vertical electrodes by which the integrated circuit selectively applies a bias and reads from the optically sensitive layers pixel information corresponding to light absorbed by the optically sensitive layers.
2. The photodetector of claim 1 , wherein the respective first electrode for the first optically sensitive layer is a different electrode than the respective first electrode for the second optically sensitive layer.
3. The photodetector of claim 1 , wherein the respective second electrode for the first optically sensitive layer and the second optically layer comprises a common electrode extending vertically from the first optically sensitive layer to the second optically sensitive layer.
4. The photodetector of claim 1 , wherein each respective first electrode is in contact with the respective first optically sensitive layer.
5. The photodetector of claim 1 , wherein each respective second electrode is in contact with the respective second optically sensitive layer.
6. The photodetector of claim 1 , wherein the respective second electrode for the first optically sensitive layer and the second optically layer comprises a common electrode.
7. The photodetector of claim 6 , wherein the common electrode extends vertically from the first optically sensitive layer to the second optically sensitive layer.
8. The photodetector of claim 6 , wherein the common electrode extends vertically from the integrated circuit along a portion of the first optically sensitive layer and the second optically sensitive layer.
9. The photodetector of claim 1 , wherein the respective second electrode is configured to provide a barrier to carriers around the first electrode.
10. The photodetector of claim 1 , wherein the common electrode extends vertically from the integrated circuit.
11. The photodetector of claim 1 , wherein the second electrode is at least partially transparent and is positioned over the respective optically sensitive layer.
12. The photodetector of claim 1 , wherein the respective first electrode and the respective second electrode are non-transparent and separated by a distance corresponding to a width dimension and a length dimension.
13. The photodetector of claim 12 , wherein the width dimension is approximately 2 um.
14. The photodetector of claim 12 , wherein the length dimension is approximately 2 um.
15. The photodetector of claim 12 , wherein the width dimension is approximately 2 um and the length dimension is approximately 2 um.
16. The photodetector of claim 12 , wherein the width dimension is less than approximately 2 um.
17. The photodetector of claim 12 , wherein the length dimension is less than approximately 2 um.
18. The photodetector of claim 12 , wherein the width dimension is less than approximately 2 um and the length dimension is less than approximately 2 um.
19. The photodetector of claim 12 , wherein the respective second electrode for the first optically sensitive layer and the second electrode for the second optically sensitive layer is a common electrode for both the first optically sensitive layer and the second optically sensitive layer.
20. A photodetector comprising:
a plurality of optically sensitive layers including a first optically sensitive layer and a second optically sensitive layer, the first optically sensitive layer overlying at least a portion of a first side of an integrated circuit and the second optically sensitive layer overlying at least a portion of a second side of the first optically sensitive layer;
a plurality of vertical electrodes positioned so the plurality of optically sensitive layers is interposed between a respective first electrode and a respective second electrode of the plurality of vertical electrodes, the respective first electrode and second electrode for the first optically sensitive layer being different electrodes than the respective first electrode and second electrode for the second optically sensitive layer; and
a coupling between the integrated circuit and the plurality of vertical electrodes by which the integrated circuit selectively applies a bias and reads from the optically sensitive layers pixel information corresponding to light absorbed by the optically sensitive layers.
21. A photodetector comprising:
a plurality of optically sensitive layers including a first optically sensitive layer and a second optically sensitive layer, the first optically sensitive layer overlying at least a portion of a first side of an integrated circuit and the second optically sensitive layer overlying at least a portion of a second side of the first optically sensitive layer;
a plurality of vertical electrodes positioned so the plurality of optically sensitive layers is interposed between a respective first electrode and a respective second electrode of the plurality of vertical electrodes, each respective first electrode being positioned laterally relative to at least a portion of the respective second electrode and each respective second electrode being disposed around the respective first electrode; and
a coupling between the integrated circuit and the plurality of vertical electrodes by which the integrated circuit selectively applies a bias and reads from the optically sensitive layers pixel information corresponding to light absorbed by the optically sensitive layers.
22. The photodetector of claim 21 , wherein the respective second electrode is configured to provide a barrier to carriers around the first electrode.