High-sensitivity nanoscale wire sensors
The present invention generally relates, in some aspects, to nanoscale wire devices and methods for use in determining analytes suspected to be present in a sample. Certain embodiments of the invention provide a nanoscale wire that has improved sensitivity, as the carrier concentration in the wire is controlled by an external gate voltage, such that the nanoscale wire has a Debye screening length that is greater than the average cross-sectional dimension of the nanoscale wire when the nanoscale wire is exposed to a solution suspected of containing an analyte. This Debye screening length (lambda) associated with the carrier concentration (p) inside nanoscale wire is adjusted, in some cases, by adjusting the gate voltage applied to an FET structure, such that the carriers in the nanoscale wire are depleted.
1. A method, comprising:
exposing a nanoscale wire, having a reaction entity immobilized relative thereto, to a solution suspected of containing an analyte that the reaction entity is able to bind, wherein the nanoscale wire exhibits a carrier density of less than about 10 19 cm −3 during binding of the analyte to the nanoscale wire.
2. The method of claim 1 , wherein the reaction entity comprises a nucleic acid.
3. The method of claim 1 , wherein the reaction entity comprises a protein.
4. The method of claim 1 , wherein the reaction entity comprises an enzyme.
5. The method of claim 1 , wherein the reaction entity comprises an antibody.
6. The method of claim 1 , wherein the reaction entity is covalently immobilized to the nanoscale wire.
7. The method of claim 1 , wherein the reaction entity is immobilized to the nanoscale wire via a linker.
8. The method of claim 1 , wherein the nanoscale wire is a semiconductor nanowire.
9. The method of claim 8 , wherein the semiconductor nanowire is a silicon nanowire.
10. The method of claim 1 , wherein the reaction entity specifically binds the analyte.
11. The method of claim 1 , wherein the solution has an ionic strength of less than about 10 mM.
12. The method of claim 1 , wherein the carrier density is less than about 10 18 cm −3 .
13. The method of claim 1 , comprising:
providing the nanoscale wire under conditions wherein the nanoscale wire does not exhibit a carrier density of less than about 10 19 cm −3 ; and
altering the temperature of the nanoscale wire such that the nanoscale wire exhibits a carrier density of less than about 10 19 cm −3 .
14. The method of claim 1 , comprising:
providing the nanoscale wire under conditions wherein the nanoscale wire does not exhibit a carrier density of less than about 10 19 cm −3 ; and
altering the voltage experienced by the nanoscale wire such that the nanoscale wire exhibits a carrier density of less than about 10 19 cm −3 .
15. The method of claim 1 , wherein the nanoscale wire is contained within a microfluidic channel.
16. The method of claim 1 , wherein the nanoscale wire is lightly doped.
17. A method, comprising:
providing a field effect transistor comprising a source electrode, a global gate electrode, a drain electrode, and a semiconductor nanoscale wire having a reaction entity immobilized relative thereto connecting the source electrode and the drain electrode, wherein the nanoscale wire is exposed to a solution; and
applying voltage to the global gate electrode such that the semiconductor nanowire exhibits a carrier density of less than about 10 19 cm −3 .
18. A method, comprising:
exposing a semiconductor nanoscale wire, having a reaction entity immobilized relative thereto, to a solution suspected of containing an analyte that the reaction entity is able to bind, wherein the nanoscale wire has a Debye screening length in the solution that is greater than the average cross-sectional dimension of the nanoscale wire when the analyte is bound to the reaction entity.