Multilayer device with organic and inorganic dielectric material
Embodiments of methods, apparatuses, devices, and/or systems for forming a solution processed device are described.
1. An apparatus, comprising:
a multilayer device comprising at least one layer having one or more dielectric properties,
wherein said layer having one or more dielectric properties is comprised of at least one inorganic dielectric material and at least one organic dielectric material,
wherein at least a portion of said inorganic dielectric material and at least a portion of said organic dielectric material are deposited by use of one or more solution processes during which said inorganic dielectric material comprises nanoparticles of silicon dioxide suspended in a solvent of water, glycol, and/or alcohol.
2. The apparatus of claim 1 , wherein said multilayer device comprises a thin film transistor.
3. The apparatus of claim 2 , wherein said thin film transistor substantially comprises a top gate transistor.
4. The apparatus of claim 2 , wherein said thin film transistor substantially comprises a bottom gate transistor.
5. The apparatus of claim 1 , wherein said inorganic dielectric material substantially comprises one or more of: zirconium oxide, tin oxide, titanium oxide, tantalum oxide, yttrium oxide, lanthanum oxide, silicon oxide, aluminum oxide, hafnium oxide, barium zirconate titanate, barium strontium titanate, silicon nitride, and/or silicon oxynitride.
6. The apparatus of claim 5 , wherein said inorganic dielectric material is formed to a thickness approximately in the range of 1-500 nm.
7. The apparatus of claim 5 , wherein said inorganic dielectric material substantially comprises zirconium oxide, and is formed to a thickness approximately in the range of 20-100 nm.
8. The apparatus of claim 1 , wherein said organic dielectric material substantially comprises one or more of: a UV curable acrylic monomer, an acrylic polymer, a UV curable monomer, a thermal curable monomer, a polymer solution, a melted polymer, an oligomer solution, a poly methyl methacrylate, a poly vinylphenol, a benzocyclobutene, and/or one or more polyimides.
9. The apparatus of claim 8 , wherein said organic dielectric material is formed to a thickness approximately in the range of 50-5000 nm.
10. The apparatus of claim 8 , wherein said organic dielectric material substantially comprises a UV curable acrylic monomer, and is formed to a thickness approximately in the range of approximately 200-2000 nm.
11. The apparatus of claim 1 , wherein said nanoparticles of SiO 2 have a diameter of approximately 20 nanometers, and comprise approximately 15-30% of said solution by weight.
12. The apparatus of claim 1 , wherein said one or more solution processes comprise one or more of: an ejection process, a spin coating process, a contact printing process, a dip-coating process, a spray coating process, a curtain coating process, a screen printing process, a chemical bath deposition, and/or successive ionic layer absorption and/or reaction.
13. The apparatus of claim 12 , wherein said ejection process is substantially performed by use of a thermal ink jet (TIJ) device.
14. A thin film transistor (TFT), formed substantially by a process comprising:
depositing a first material over at least a portion of a substrate by use of one or more solution processes to form a first material layer, at least a portion of said first material layer comprising inorganic dielectric material; depositing a second material over and/or in contact with at least a portion of said first material layer by use of one or more solution processes to form a second material layer, at least a portion of said second material layer comprising organic dielectric material, to form at least a portion of a dielectric device layer:
wherein said first material comprises nanoparticles of SiO 2 suspended in a solvent of water, glycol and/or alcohol, said nanoparticles of SiO 2 having a diameter of approximately 20 nanometers, and comprising approximately 15-30% of said solution by weight.