Compound semiconductor single-crystal manufacturing device and manufacturing method
A compound semiconductor single-crystal manufacturing device ( 1 ) is furnished with: a laser light source ( 6 ) making it possible to sublime a source material by directing a laser beam onto the material; a reaction vessel ( 2 ) having a laser entry window ( 5 ) through which the laser beam output from the laser light source ( 6 ) can be transmitted to introduce the beam into the vessel interior, and that is capable of retaining a starting substrate ( 3 ) where sublimed source material is recrystallized; and a heater ( 7 ) making it possible to heat the starting substrate ( 3 ). The laser beam is shone on, to heat and thereby sublime, the source material within the reaction vessel ( 2 ), and compound semiconductor single crystal is grown by recrystallizing the sublimed source material onto the starting substrate ( 3 ); afterwards the laser beam is employed to separate the compound semiconductor single crystal from the starting substrate ( 3 ).
1. A compound semiconductor single-crystal manufacturing device comprising:
a laser light source ( 6 ) enabled to sublime a source material by directing a laser beam onto the source material;
a reaction vessel ( 2 ) having a laser entry window ( 5 ) through which the laser beam output from said laser light source ( 6 ) can be transmitted to introduce the beam into the vessel interior, and enabled to retain a starting substrate where sublimed source material is recrystallized; and
a heater ( 7 ) enabled to heat the starting substrate; wherein
the laser light source, the laser entry window, and the starting substrate are
disposed, in that order, so as to be rowed up along a single straight line.
2. The compound semiconductor single-crystal manufacturing device set forth in claim 1 , wherein the source material is a sintered source powder; the manufacturing device therein being configured in such a way that:
the sintered source powder is installable on said laser entry window ( 5 ); and
inside said reaction vessel ( 2 ) the starting substrate is retained in a position opposite said laser entry window ( 5 ).
3. The compound semiconductor single-crystal manufacturing device set forth in claim 1 , further comprising a sensor ( 10 ) enabled to detect a change of state in the starting substrate when the laser beam is shone on the starting substrate.
4. The compound semiconductor single-crystal manufacturing device set forth in claim 1 , wherein said laser light source ( 6 ) is movable.
5. The compound semiconductor single-crystal manufacturing device set forth in claim 1 , having a plurality of said laser light sources ( 6 ).
6. A compound semiconductor single-crystal manufacturing method, comprising:
a sublimation step of directing a laser beam from a laser light source ( 6 ) onto a source material installed inside a reaction vessel ( 2 ) having a laser entry window ( 5 ) to heat the source material, thereby subliming the source material;
a crystal growth step of recrystallizing the sublimed source material onto a starting substrate ( 3 ) to grow compound semiconductor single-crystal ( 8 ); and
a separation step, after formation of the compound semiconductor single-crystal ( 8 ), of employing the laser beam to separate the compound semiconductor single-crystal from the starting substrate ( 3 ); wherein
the laser light source, the laser entry window, and the starting substrate are disposed, in that order, so as to be rowed up along a single straight line.
7. The compound semiconductor single-crystal manufacturing method set forth in claim 6 , wherein the wavelength of the laser beam is determined in such a way that the amount of energy that the starting substrate ( 3 ) absorbs is greater than the amount of energy that the compound semiconductor single crystal ( 8 ) absorbs.
8. The compound semiconductor single-crystal manufacturing method set forth in claim 6 , wherein in said separation step, the laser beam is directed at the interface between the compound semiconductor single crystal ( 8 ) and the starting substrate ( 3 ) to remove at least a portion of the starting substrate ( 3 ), thereby separating the starting substrate ( 3 ) from the compound semiconductor single crystal ( 8 ).
9. The compound semiconductor single-crystal manufacturing method set forth in claim 6 , wherein in said crystal growth step, the compound semiconductor single crystal ( 8 ) is grown with the starting substrate ( 3 ) being heated at a temperature higher than the temperature of the space inside the reaction vessel ( 2 ).
10. The compound semiconductor single-crystal manufacturing method set forth in claim 6 , wherein the progress status of said sublimation step is monitored by detecting a change of state in the starting substrate ( 3 ) from the laser beam being shone on the starting substrate ( 3 ).
11. The compound semiconductor single-crystal manufacturing method set forth in claim 6 , wherein said sublimation step, said crystal growth step, and said separation step are carried out in succession and automatedly.