Solid state imaging device
According to one embodiment, a solid state imaging device has a semiconductor substrate. First, second and third photoelectric conversion portions are provided in a surface region of the semiconductor substrate. A blue color filter has a film thickness to give a first light path length. A green color filter has a film thickness to give a second light path length longer than the first light path length. A red color filter has a film thickness to give a third light path length longer than the second light path length. A flattening film is formed on the blue color filter, the green color filter and the red color filter. The flattening film flats steps of the color filters. Micro lenses are provided on the flat film. Each of the micro lenses is formed at a position corresponding to each of the first, second and third photoelectric conversion portions.
1. A solid state imaging device, comprising:
a semiconductor substrate;
first, second, and third photoelectric conversion portions provided in a surface region of the semiconductor substrate;
a blue color filter provided at a position corresponding to the first photoelectric conversion portion, the blue color filter having a first film thickness to give a first light path length;
a green color filter provided at a position corresponding to the second photoelectric conversion portion, the green color filter having a second film thickness to give a second light path length longer than the first light path length;
a red color filter provided at a position corresponding to the third photoelectric conversion portion, the red color filter having a third film thickness to give a third light path length longer than the second light path length;
a flattening film formed on the blue color filter, the green color filter, and the red color filter, the flattening film flattening steps of the color filters; and
micro lenses provided on the flattening film, each of the micro lenses being formed at a position corresponding to each of the first, the second, and the third photoelectric conversion portions, wherein
each of the film thicknesses d of the color filters is set approximately to satisfy d=(λ×m)/(2×n) or more, where λ is a central wavelength of each color band of the color filters, m is an integer of three or more, and n is each refractive index of the color filters.
2. A solid state imaging device according to claim 1 , wherein the solid state imaging device is a back side illumination type.
3. A solid state imaging device according to claim 1 , wherein the m is an integer of five or more.
4. A solid state imaging device according to claim 1 , further comprising:
a fourth photoelectric conversion portion provided in the surface region of the semiconductor substrate;
an infrared color filter provided at a position corresponding to the fourth photoelectric conversion portion, the infrared color filter having a fourth film thickness to give a fourth light path length longer than the third light path length; and
a micro lens provided on the flattening film, the micro lens being formed at a position corresponding to the infrared color filter, wherein
the flattening film is formed between the color filters and the micro lenses provided at the position corresponding to the color filters, and the flattening film flattens steps of the color filters.
5. A solid state imaging device according to claim 4 , wherein the solid state imaging device is a back side illumination type.
6. A solid state imaging device according to claim 4 , wherein each of the film thicknesses d of the color filters is set approximately to satisfy d=(λ×m)/(2×n) or more, where λ is a central wavelength of each color band of the color filters, m is an integer of three or more, and n is each refractive index of the color filters.
7. A solid state imaging device according to claim 6 , wherein the m is an integer of five or more.
8. A solid state imaging device, comprising:
a semiconductor substrate having two principal surfaces;
an interconnection region portion formed on one of the principal surfaces of the semiconductor substrate;
first, second, and third photoelectric conversion portions formed in a surface region of the semiconductor substrate, the surface region being in contact with the one of the principal surfaces;
a blue color filter provided at a position corresponding to the first photoelectric conversion portion on a side of the other of the principal surfaces of the semiconductor substrate, the blue color filter having a first film thickness to give a first light path length;
a green color filter provided at a position corresponding to the second photoelectric conversion portion on a side of the other of the principal surfaces of the semiconductor substrate, the green color filter having a second film thickness to give a second light path length longer than the first light path length;
a red color filter provided at a position corresponding to the third photoelectric conversion portion on a side of the other of the principal surfaces of the semiconductor substrate, the red color filter having a third film thickness to give a third light path length longer than the second light path length;
a flattening film formed on the blue color filter, the green color filter, and the red color filter, the flattening film flattening steps of the color filters; and
micro lenses provided on the flattening film, each of the micro lenses being formed at a position corresponding to each of the first, the second, and the third photoelectric conversion portions, wherein
each of the film thicknesses d of the color filters is set approximately to satisfy d=(λ×m)/(2×n) or more, where λ is a central wavelength of each color band of the color filters, m is an integer of three or more, and n is each refractive index of the color filters.
9. A solid state imaging device according to claim 8 , wherein the solid state imaging device is a back side illumination type.
10. A solid state imaging device according to claim 8 , wherein the m is an integer of five or more.
11. A solid state imaging device according to claim 8 , further comprising:
a fourth photoelectric conversion portion formed in the surface region of the semiconductor substrate, the surface region being in contact with the one of the principal surfaces;
an infrared color filter provided at a position corresponding to the fourth photoelectric conversion portion on the side of the other of the principal surfaces of the semiconductor substrate, the infrared color filter having a fourth film thickness to give a fourth light path length longer than the third light path length; and
a micro lens formed at a position corresponding to the infrared color filter, wherein
the flattening film is formed between the color filters and the micro lenses provided at the position corresponding to the color filters, and the flattening film flattens steps of the color filters.
12. A solid state imaging device according to claim 11 , wherein the solid state imaging device is a back side illumination type.
13. A solid state imaging device according to claim 11 , wherein each of the film thicknesses d of the color filters is set approximately to satisfy d=(λ×m)/(2×n) or more, where λ is a central wavelength of each color band of the color filters, m is an integer of three or more, and n is each refractive index of the color filters.
14. A solid state imaging device according to claim 13 , wherein the m is an integer of five or more.