IP Library Granted Patent US 8,601,657
Granted Patent B2
US 8,601,657 · App. 13/473,937 · Granted Dec 10, 2013

Method for manufacturing piezoelectric device

Inventor: Korekiyo Ito (Nagaokakyo, JP)
Assignee: Murata Manufacturing Co., Ltd.
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,601,657
App. No.
13/473,937
Granted
Dec 10, 2013
Kind
B2
Abstract

In a piezoelectric device and a method of manufacturing thereof, after an ion implanted portion is formed in a piezoelectric single crystal substrate by implantation of hydrogen ions, an interlayer of a metal is formed on a rear surface of the piezoelectric single crystal substrate. In addition, a support member is bonded to the piezoelectric single crystal substrate with the interlayer interposed therebetween. A composite piezoelectric body in which the ion implanted portion is formed is heated at about 450° C. to about 700° C. to oxidize the metal of the interlayer so as to decrease the conductivity thereof. Accordingly, the conductivity of the interlayer is decreased, so that a piezoelectric device having excellent resonance characteristics is provided.

Claims (8)

1. A method for manufacturing a piezoelectric device comprising:

an ion implantation step of implanting an ionized element in a piezoelectric substrate to form a portion therein in which the ionized element implanted in the piezoelectric substrate has a peak concentration;

an interlayer formation step of forming an interlayer including a metal on at least one of the piezoelectric substrate or a support member which supports the piezoelectric substrate;

a bonding step of bonding the piezoelectric substrate and the support member with the interlayer interposed therebetween;

a separation step of separating a piezoelectric thin film by heating the piezoelectric substrate using the portion in which the ionized element implanted therein has a peak concentration as a separation surface; and

a heat treatment step of oxidizing or nitriding the interlayer by heating.

2. The method for manufacturing a piezoelectric device according to claim 1 , wherein in the heat treatment step, heating is performed at about 450° C. to about 700° C.

3. The method for manufacturing a piezoelectric device according to claim 1 , wherein in the heat treatment step, heating is performed at a Curie temperature or less of a material of the piezoelectric thin film.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 17, 2012
From: ITO, KOREKIYO
To: MURATA MANUFACTURING CO., LTD.
Reel/Frame 028226/0254 →
Priority Claims (1)
JP 2009-268917 · Nov 26, 2009 · national
Continuity (2)
Continuation PCTJP2010070765 · Nov 22, 2010
Related Publication 20120229003A1 · Sep 13, 2012