Infrared detector with extended spectral response in the visible field
A semiconductor-based SWIR infrared detector sensitive to wavelengths shorter than about 2.5 microns comprises a stack of semiconductor layers based on III-V materials forming a PIN photodiode. The stack includes a naked electrical contact, called a lower electrical contact, serving as an optical window; and a detection layer sensitive to said wavelengths. The lower contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate intended to serve as a temporary substrate possibly being made of a III-V material such as InP or GaAs or of silicon or germanium.
1. A semiconductor-based short wavelength infrared (SWIR) infrared detector sensitive to wavelengths shorter than 2.5 microns comprising:
a stack of semiconductor layers based on III-V materials forming a PIN photodiode, said stack comprising:
a naked electrical contact, being a lower electrical contact, serving as an optical window; and
a detection layer sensitive to said wavelengths,
wherein the lower electrical contact comprises at least one layer of indirect-bandgap III-V material(s) doped n-type, pseudomorphic or lattice matched with a substrate made of a III-V material comprising InP or GaAs or of silicon or germanium.
2. The infrared detector according to claim 1 , wherein the detection layer is made of GaInAs.
3. The infrared detector according to claim 2 , wherein the lower electrical contact comprises an (Al,As,Sb)-based alloy.
4. The infrared detector according to claim 2 , wherein the lower electrical contact comprises an AlAs 0.563 Sb 0.437 alloy.
5. The infrared detector according to claim 3 , wherein the lower electrical contact comprises at least one alternation of (Al,Ga)AsSb/(AlGa)InAs layers.
6. The infrared detector according to claim 5 , wherein the alternation of layers comprises at least about ten pairs of (Al,Ga)AsSb and (AlGa)InAs layers.
7. The infrared detector according to claim 1 , further comprising:
a layer for matching conduction bands of the lower electrical contact and the sensitive layer.
8. The infrared detector according to claim 7 , wherein the matching layer comprises a set of elementary matching layers comprising an alternation of (Al,Ga)AsSb/(Al,Ga)InAs layers.
9. The infrared detector according to claim 1 , wherein the detection layer is made of GaAs.
10. The infrared detector according to claim 1 , wherein the detection layer is made of InP.
11. The infrared detector according to claim 9 , wherein the lower electrical contact comprises at least one layer of Al x Ga 1-x As alloy with x lying between 0.42 and 1.
12. The infrared detector according to claim 10 , wherein the lower electrical contact comprises an (Al,As,Sb)-based alloy.
13. The infrared detector according to claim 10 , wherein the lower electrical contact comprises an AlAs 0.563 Sb 0.437 alloy.
14. The infrared detector according to claim 10 , wherein the so-called lower electrical contact comprises at least one alternation of (Al,Ga)AsSb/(AlGa)InAs layers.
15. The infrared detector according to claim 10 , wherein the lower electrical contact comprises at least about ten pairs of (Al,Ga)AsSb and (AlGa)InAs layers.
16. A fabrication process for fabricating an SWIR infrared detector according to claim 1 comprising:
producing, on the surface of an InP substrate, the lower electrical contact;
producing the detection layer on the surface of the lower electrical contact;
producing a p-type doped upper layer made of a III-V semiconductor and a contact, called the upper contact; and
removing said substrate from the stack produced beforehand.