Large area organic light emitting diode display

1. An organic light emitting diode display comprising:

a thin film transistor substrate including a thin film transistor, a driving current line to supply an electric signal to the thin film transistor, a driving line contact hole to expose some portions of the driving current line, and an organic light emitting diode connected to the thin film transistor;

a cap including a cap substrate and an auxiliary electrode disposed on a surface of the cap substrate with an area that is at least ⅓ of an area of the cap substrate;

a conductive sealing material to electrically connect the auxiliary electrode and the driving current line through the driving line contact hole; and

an organic adhesive joining the thin film transistor substrate and the cap.

2. The organic light emitting diode display according to claim 1 , wherein the auxiliary electrode includes a metal material having a resistivity of less than or equal to 5.0 μΩcm 2 .

3. The organic light emitting diode display according to claim 2 , wherein the auxiliary electrode includes at least one of copper (Cu), nickel (Ni), and aluminum (Al).

4. The organic light emitting diode display according to claim 1 , wherein the auxiliary electrode includes a low electric resistance metal layer and a high corrosive resistance metal layer.

5. The organic light emitting diode display according to claim 4 , wherein the low electric resistance metal layer includes at least one of copper (Cu), nickel (Ni), and aluminum (Al), and

the high corrosive resistance metal layer includes at least one of titanium (Ti), molybdenum (Mo), and tantalum (Ta).

6. The organic light emitting diode display according to claim 1 , wherein the auxiliary electrode includes a triple layer structure having at least one of Mo/Cu/Mo, Ta/Cu/Ta, MoTi/Cu/MoTi.

7. The organic light emitting diode display according to claim 1 , wherein a summation of areas of the driving current line exposed by the driving line contact hole is at least 0.1% of a whole area of the auxiliary electrode.

8. The organic light emitting diode display according to claim 1 , wherein the conductive sealing material comprises:

a base material including at least one of epoxy, acryl and silicon; and

a plurality of conductive balls including a metal material having an electric conductivity of about 0.2×10 6 Ω/cm.

9. The organic light emitting diode display according to claim 8 , wherein the plurality of conductive balls include at least one of gold (Au), silver (Ag), copper (Cu) and nickel (Ni).

10. The organic light emitting diode display according to claim 8 , wherein a content ratio between the plurality of conductive balls and the base material is from 3 (wt %):97 (wt %) to 5 (wt %):95 (wt %).

11. The organic light emitting diode display according to claim 8 , wherein the base material has a viscosity in a range from 50,000 cPs to 250,000 cPs.

12. The organic light emitting diode display according to claim 8 , wherein the plurality of conductive balls have a diameter of about 30 μm.

13. The organic light emitting diode display according to claim 12 , further comprising a cell gap disposed between the thin film transistor substrate and the cap.

14. The organic light emitting diode display according to claim 13 , wherein the diameter is about 5%˜20% larger than the cell gap.

15. The organic light emitting diode display according to claim 1 , wherein the driving line contact hole is formed where the driving current line crosses the conductive sealing material.