Silicon carbide semiconductor device and method of manufacturing the same
The silicon carbide semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate insulating layer, a gate electrode, a source electrode, a drain electrode, and a deep layer. The deep layer is disposed under the base region and is located to a depth deeper than the trench. The deep layer is divided into a plurality of portions in a direction that crosses a longitudinal direction of the trench. The portions include a group of portions disposed at positions corresponding to the trench and arranged at equal intervals in the longitudinal direction of the trench. The group of portions surrounds corners of a bottom of the trench.
1. A silicon carbide semiconductor device comprising:
a substrate made of silicon carbide, the substrate having one of a first conductivity type and a second conductivity type, the substrate having first and second opposing surfaces;
a drift layer disposed on the first surface of the substrate, the drift layer made of silicon carbide, the drift layer having the first conductivity type and having a lower impurity concentration than the substrate;
a base region disposed on the drift layer, the base region made of silicon carbide and having the second conductivity type;
a source region disposed at a surface portion of the base region, the source region made of silicon carbide, the source region having the first conductive type and having a higher impurity concentration than the drift layer;
a trench provided from a surface of the source region to a depth deeper than the base region, the trench arranged in a stripe pattern that includes a plurality of lines extending in a predetermined direction;
a gate insulating layer disposed on an inner wall of the trench;
a gate electrode disposed on the gate insulating layer in the trench;
a source electrode electrically coupled with the source region and the base region;
a drain electrode located on the second surface of the substrate; and
a deep layer disposed under the base region and located to a depth deeper than the trench, the deep layer having the second conductivity type, the deep layer divided into a first group of portions and a second group of portions disposed away from each other in a direction that crosses the predetermined direction, the first group of portions disposed at positions corresponding to the plurality of lines of the trench and arranged at equal intervals in the predetermined direction, the first group of portions surrounding corners of bottoms of the plurality of lines, the second group of portions disposed at center positions between adjacent two of the plurality of lines, wherein
an inversion channel is provided at the surface portion of the base region located on the sidewall of the trench and electric current flows between the source electrode and the drain electrode through the source region and the drift layer by controlling a voltage applied to the gate electrode.
2. The silicon carbide semiconductor device according to claim 1 , further comprising
a current diffusion layer of the first conductivity type, the current diffusion layer disposed between the base region and the group of portions disposed between adjacent two of the plurality of lines.
3. The silicon carbide semiconductor device according to claim 1 , wherein
the deep layer are arranged in a lattice pattern in which the plurality of portions is arranged at equal intervals in a direction perpendicular to the predetermined direction.
4. The silicon carbide semiconductor device according to claim 1 , wherein
the deep layer are arranged in a staggered pattern in which the plurality of portions is arranged at equal intervals in the predetermined direction, and the group of portions disposed between adjacent two of the plurality of lines is shifted in the predetermined direction with respect to the group of portions surrounding the corners of the bottom of the trench.
5. The silicon carbide semiconductor device according to claim 1 , wherein
each of the plurality of portions has a polygonal shape, and
the deep layer is arranged in a honeycomb pattern.
6. The silicon carbide semiconductor device according to claim 1 , wherein
the plurality of portions includes only the group of portions surrounding the corners of the bottom of the trench, and
each of the plurality of portions has corners that are rounded.
7. The silicon carbide semiconductor device according to claim 1 , further comprising
an electric field relaxation region surrounding the deep layer, the electric field relaxation region having the second conductivity type, the electric field relaxation region having a lower impurity concentration than the deep layer.
8. A silicon carbide semiconductor device comprising:
a substrate made of silicon carbide, the substrate having one of a first conductivity type and a second conductivity type, the substrate having first and second opposing surfaces;
a drift layer disposed on the first surface of the substrate, the drift layer made of silicon carbide, the drift layer having the first conductivity type and having a lower impurity concentration than the substrate;
a base region disposed on the drift layer, the base region made of silicon carbide and having the second conductivity type;
a source region disposed at a surface portion of the base region, the source region made of silicon carbide, the source region having the first conductive type and having a higher impurity concentration than the drift layer;
a trench provided from a surface of the source region to a depth deeper than the base region, the trench arranged in a stripe pattern including a plurality of lines extending in a predetermined direction;
a gate insulating layer disposed on an inner wall of the trench;
a channel layer disposed between the base region and the gate insulating layer in the trench, the channel layer made of silicon carbide and having the first conductivity type;
a gate electrode disposed on the gate insulating layer in the trench;
a source electrode electrically coupled with the source region and the base region;
a drain electrode located on the second surface of the substrate; and
a deep layer disposed under the base region and located to a depth deeper than the trench, the deep layer having the second conductivity type, the deep layer divided into first group of portions and a second group of portions disposed away from each other in a direction that crosses the predetermined direction, the first group of portions disposed at positions corresponding to the plurality of lines of the trench and arranged at equal intervals in the predetermined direction, the first group of portions surrounding corners of bottoms of the plurality of lines, the second group of portions disposed at center positions between adjacent two of the plurality of lines, wherein
an accumulation channel is provided at the channel layer on the sidewall of the trench and electric current flows between the source electrode and the drain electrode through the source region and the drift layer by controlling a voltage applied to the gate electrode.
9. A silicon carbide semiconductor device comprising:
a substrate made of silicon carbide, the substrate having one of a first conductivity type and a second conductivity type, the substrate having first and second opposing surfaces;
a drift layer disposed on the first surface of the substrate, the drift layer made of silicon carbide, the drift layer having the first conductivity type and having a lower impurity concentration than the substrate;
a base region disposed on the drift layer, the base region made of silicon carbide and having the second conductivity type;
a source region disposed at a surface portion of the base region, the source region made of silicon carbide, the source region having the first conductive type and having a higher impurity concentration than the drift layer;
a trench provided from a surface of the source region to a depth deeper than the base region, the trench extending in a predetermined direction;
a gate insulating layer disposed on an inner wall of the trench;
a gate electrode disposed on the gate insulating layer in the trench;
a source electrode electrically coupled with the source region and the base region;
a drain electrode located on the second surface of the substrate; and
a deep layer disposed under the base region and located to a depth deeper than the trench, the deep layer having the second conductivity type, the deep layer including a plurality of sections extending in a direction that crosses the predetermined direction, each of the plurality of sections includes a plurality of portions located at positions corresponding to the trench and a plurality of portions located between adjacent two of the plurality of lines, each of the plurality of portions located between the adjacent two of the plurality of lines is narrower than each of the plurality of portions located at the positions corresponding to the trench, wherein
an inversion channel is provided at the surface portion of the base region located on the sidewall of the trench and electric current flows between the source electrode and the drain electrode through the source region and the drift layer by controlling a voltage applied to the gate electrode.
10. The silicon carbide semiconductor device according to claim 9 , wherein
a current diffusion layer of the first conductivity type, the current diffusion layer disposed between the base region and the plurality of portions of the deep layer located between adjacent two of the plurality of lines.
11. A silicon carbide semiconductor device comprising:
a substrate made of silicon carbide, the substrate having one of a first conductivity type and a second conductivity type, the substrate having first and second opposing surfaces;
a drift layer disposed on the first surface of the substrate, the drift layer made of silicon carbide, the drift layer having the first conductivity type and having a lower impurity concentration than the substrate;
a base region disposed on the drift layer, the base region made of silicon carbide and having the second conductivity type;
a source region disposed at a surface portion of the base region, the source region made of silicon carbide, the source region having the first conductive type and having a higher impurity concentration than the drift layer;
a trench provided from a surface of the source region to a depth deeper than the base region, the trench arranged in a plurality of lines extending in a predetermined direction;
a gate insulating layer disposed on an inner wall of the trench;
a channel layer disposed between the base region and the gate insulating layer in the trench, the channel layer made of silicon carbide and having the first conductivity type;
a gate electrode disposed on the gate insulating layer in the trench;
a source electrode electrically coupled with the source region and the base region;
a drain electrode located on the second surface of the substrate; and
a deep layer disposed under the base region and located to a depth deeper than the trench, the deep layer having the second conductivity type, the deep layer including a plurality of sections extending in a direction that crosses the predetermined direction, each of the plurality of sections includes a plurality of portions located at positions corresponding to the trench and a plurality of portions located between adjacent two of the plurality of lines, each of the plurality of portions located between adjacent two of the plurality lines is narrower than each of the plurality of portions located at the positions corresponding to the trench, wherein
an accumulation channel is provided at the channel layer on the sidewall of the trench and electric current flows between the source electrode and the drain electrode through the source region and the drift layer by controlling a voltage applied to the gate electrode.