Semiconductor storage device operative to search for data
To provide a semiconductor storage device capable of performing a search of the next data while performing a search of certain data. A first comparator compares data output to a bit line from a memory cell with first search data by activating a word line. A second comparator compares data output to a bit line from the memory cell with second search data by activating a word line. Data output to a bit line by the activation of one word line is input to both the first comparator and second comparator.
1. A semiconductor storage device comprising:
a memory cell array including a plurality of memory cells arranged in a matrix;
a first comparator comparing data output to a bit line from the memory cell by activating a word line with first search data;
a second comparator comparing data output to the bit line from the memory cell by activating the word line with second search data;
an address generator sequentially generating a row address;
a row decoder activating any of word lines within the memory cell array according to the generated row address;
a first priority encoder coupled to the address generator and latching a row address when the first comparator determines coincidence; and
a second priority encoder coupled to the address generator and latching a row address when the second comparator determines coincidence,
wherein data output to the bit line by activating one word line is input to both the first comparator and second comparator,
wherein the first and second priority encoders latch a row address with higher priority if there is a plurality of row addresses when the coincidence is determined,
wherein the address generator cyclically generates row addresses from a small value in ascending order,
wherein the first and second priority encoders latch a row address with a smaller value if there is a plurality of row addresses when coincidence is determined, and
wherein the second priority encoder latches a row address when coincidence is determined first, resets at the same time a row address that is latched when the first row address is input, and latches a row address when coincidence is determined next.
2. A semiconductor storage device comprising:
a memory cell array including a plurality of memory cells arranged in a matrix;
a first comparator comparing data output to a bit line from the memory cell by activating a word line with first search data;
a second comparator comparing data output to the bit line from the memory cell by activating the word line with second search data;
an address generator sequentially generating a row address;
a row decoder activating any of word lines within the memory cell array according to the generated row address;
a first priority encoder coupled to the address generator and latching a row address when the first comparator determines coincidence; and
a second priority encoder coupled to the address generator and latching a row address when the second comparator determines coincidence,
wherein data output to the bit line by activating one word line is input to both the first comparator and second comparator,
wherein the first and second priority encoders latch a row address with higher priority if there is a plurality of row addresses when the coincidence is determined,
wherein the address generator cyclically generates row addresses from a small value in ascending order,
wherein the first and second priority encoders latch a row address with a smaller value if there is a plurality of row addresses when coincidence is determined, and
wherein the semiconductor storage device causes the address generator to sequentially generate row addresses from a small value in ascending order, first according to an input of a search command, and if the next search command is input before the maximum row address is generated, the semiconductor storage device, when causing the address generator to generate the K-th row next, further causes the address generator to generate sequentially one or a plurality of row address(es) from the top row address to the (K−1)th row address after the maximum row address is generated.