Semiconductor light emitting device having a high resistive layer
Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.
1. A semiconductor light emitting device, comprising:
a first conductive type semiconductor layer;
an active layer disposed on the first conductive type semiconductor layer;
a second conductive type semiconductor layer including a first semiconductor layer disposed on the active layer and a second semiconductor layer disposed on the first semiconductor layer;
a third semiconductor layer disposed between the first semiconductor layer and the second semiconductor layer;
a first electrode electrically connected to the first conductive type semiconductor layer; and
a second electrode electrically connected to the second conductive type semiconductor layer,
wherein the third semiconductor layer is physically contacted with an lower surface of the second semiconductor layer,
wherein the third semiconductor layer has a P-type dopant concentration less than that of the first and second semiconductor layers, and
wherein the third semiconductor layer has a hole concentration of about 5×10 18 /cm 3 or less and has a greater resistivity than that of the first semiconductor layer.
2. The semiconductor light emitting device according to claim 1 , wherein the third semiconductor layer has a thickness of greater than 0 nm and less than or equal to about 9 nm.
3. The semiconductor light emitting device according to claim 1 , wherein the first semiconductor layer is physically contacted with the third semiconductor layer and the active layer.
4. The semiconductor light emitting device according to claim 1 , wherein the third semiconductor layer comprises at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN and AlInN.
5. The semiconductor light emitting device according to claim 1 , further comprising a fourth semiconductor between the active layer and the first semiconductor layer.
6. The semiconductor light emitting device according to claim 1 , wherein the third semiconductor layer has a greater resistivity than that of the first semiconductor layer and the second semiconductor layer.
7. The semiconductor light emitting device according to claim 6 , wherein the third semiconductor layer has the hole concentration of about 5×10 17 ˜5×10 18 /cm 3 .
8. The semiconductor light emitting device according to claim 7 , wherein the second conductive type semiconductor layer is a P-type semiconductor layer and the third semiconductor layer is formed of an insulating layer.
9. A semiconductor light emitting device, comprising:
a first conductive semiconductor layer including an n-type dopant;
a second conductive semiconductor layer including a p-type dopant;
an active layer between the first conductive semiconductor layer and the second conductive semiconductor layer;
a first semiconductor layer between the active layer and the second conductive semiconductor layer; and
a second semiconductor layer on a top surface of the second conductive semiconductor layer,
wherein the second conductive semiconductor layer is physically contacted with the first and second semiconductor layers,
wherein the first and second semiconductor layers have a greater resistivity than that of the second conductive semiconductor layer, and
wherein the first and second semiconductor layers have a hole concentration less than that of the second conductive semiconductor layer.
10. The semiconductor light emitting device according to claim 9 , wherein the first and second semiconductor layers each has the hole concentration of about 5×10 18 /cm 3 or less.
11. The semiconductor light emitting device according to claim 9 , wherein the first and second semiconductor layers each has the hole concentration of about 5×10 17 ˜5×10 18 /cm 3 .
12. The semiconductor light emitting device according to claim 11 , wherein the first and second semiconductor layers include a nitride-based semiconductor having an insulating property.
13. The semiconductor light emitting device according to claim 11 , wherein a thickness of the first semiconductor layer is greater than 0 nm and less than or equal to about 9 nm.
14. The semiconductor light emitting device according to claim 13 , wherein a thickness of the second semiconductor layer is greater than 0 nm and less than or equal to about 9 nm.