Resistive random access memory cell and memory
A Resistive Random Access Memory (RRAM) cell and a memory are disclosed. In one embodiment, the RRAM cell comprises a two-state resistor and a resistive switching memory cell connected in series. The two-state resistor can supply relatively large currents under both positive and negative voltage polarities. As a result, it is possible to reduce leakage paths in a crossbar array of memory cells, and thus to suppress reading crosstalk.
1. A Resistive Random Access Memory (RRAM) cell comprising a two-state resistor and a resistive switching memory cell connected in series,
wherein the two-state resistor comprises a lower conductive electrode, a two-state resistor functionality layer, and a middle conductive electrode, and
wherein the two-state resistor functionality layer comprises an n-p-n junction or a p-n-p junction consisted of any one or more of doped Si, Ge, GaAs, InP, and SiGe, wherein the two-state resistor is configured so that:
the two-state resistor comes into a low-resistance state from a high-resistance state when a forward sweeping voltage reaches a forward ON voltage V 1 , and keeps this low-resistance state in a forward direction,
when the sweeping voltage is swept back from V 1 , the two-state resistor keeps the low-resistance state until the sweeping voltage becomes lower than V 2 , at which point the two-state resistor comes back to the high-resistance state from the low-resistance state, wherein V 1 >V 2 ,
the two-state resistor comes into the low-resistance state from the high-resistance state when a reverse sweeping voltage reaches a reverse ON voltage V 3 , and keeps the low-resistance state in a reverse direction, and
when the sweeping voltage is swept back from V 3 , the two-state resistor keeps the low-resistance state until the sweeping voltage becomes smaller than V 4 , at which point the two-state resistor comes back to the high-resistance state from the low-resistance state, wherein |V 3 |>|V 4 |.
2. The RRAM cell according to claim 1 , wherein in the two-state resistor functionality layer, the n-p-n junction or the p-n-p junction has a doping concentration of about 1×10 12 cm −2 -about 1×10 22 cm −2 .
3. The RRAM cell according to claim 2 , wherein the n-p-n junction comprises an n-p-n Si nanowire.
4. The RRAM cell according to of claim 3 , wherein the resistive switching memory cell comprises the middle conductive electrode, a resistive storage layer, and an upper conductive electrode, wherein the two-state resistor and the resistive switching memory cell share the middle conductive electrode.
5. The RRAM cell according to of claim 2 , wherein the resistive switching memory cell comprises the middle conductive electrode, a resistive storage layer, and an upper conductive electrode, wherein the two-state resistor and the resistive switching memory cell share the middle conductive electrode.
6. The RRAM cell according to claim 1 , wherein the two-state resistor functionality layer has a thickness of about 10 nm-about 500 nm, is doped by means of thermal diffusion or ion implantation, and is deposited by means of Chemical Vapor Deposition, Atom Layer Deposition, or Molecule Beam Epitaxy.
7. The RRAM cell according to of claim 6 , wherein the resistive switching memory cell comprises the middle conductive electrode, a resistive storage layer, and an upper conductive electrode, wherein the two-state resistor and the resistive switching memory cell share the middle conductive electrode.
8. The RRAM cell according to claim 1 , wherein the resistive switching memory cell comprises a bipolar resistive switching memory cell, and has:
a programming voltage V program satisfying V program >V set >V 1 ;
an erasing voltage V erase satisfying |V erase |>V 3 ; and
a read voltage V read satisfying V 1 <V read <V set and |V read l <|V 3 |,
wherein V set is a threshold at which the bipolar resistive switching memory cell transits from a high-resistance state to a low-resistance state.
9. The RRAM cell according to of claim 8 , wherein the resistive switching memory cell comprises the middle conductive electrode, a resistive storage layer, and an upper conductive electrode, wherein the two-state resistor and the resistive switching memory cell share the middle conductive electrode.
10. The RRAM cell according to claim 1 , wherein the resistive switching memory cell comprises an unipolar resistive switching memory cell, and has:
a programming voltage V program satisfying V program >V set >V 1 ;
an erasing voltage V erase satisfying V 1 <V reset <V erase <V set ; and
a read voltage V read satisfying V 1 <V read <V reset and |V read |<|V 3 |,
wherein V set is a threshold at which the unipolar resistive switching memory cell transits from a high-resistance state to a low-resistance state, and V reset is a threshold at which the unipolar resistive switching memory cell transits from the low-resistance state to the high-resistance state.
wherein V set is a threshold at which the unipolar resistive switching memory cell transits from a high-resistance state to a low-resistance state, and V reset is a threshold at which the unipolar resistive switching memory cell transits from the low-resistance state to the high-resistance state.
11. The RRAM cell according to of claim 10 , wherein the resistive switching memory cell comprises the middle conductive electrode, a resistive storage layer, and an upper conductive electrode, wherein the two-state resistor and the resistive switching memory cell share the middle conductive electrode.
12. The RRAM cell according to claim 1 , wherein the resistive switching memory cell comprises the middle conductive electrode, a resistive storage layer, and an upper conductive electrode, wherein the two-state resistor and the resistive switching memory cell share the middle conductive electrode.
13. The RRAM cell according to claim 12 , wherein the resistive storage layer has a thickness of about 5 nm-about 500 nm, is deposited by means of any one of Electron Beam Evaporation, Chemical Vapor Deposition, Pulsed Laser Deposition, Atom Layer Deposition, Spin Coating, and Magnetron Sputtering, and comprises any one or more of CuS, AgS, AgGeSe, CuI x S l-x where 0.1<x<1, ZrO 2 , HfO 2 , TiO 2 , SiO 2 , WO x where 1<x<3, NiO, CuO x where 0.5<x<1, ZnO, TaO x where 1<x<2.5, CoO, Y 2 O 3 , Si, PrCaMnO, SrZrO 3 , SrTiO 3 , Cu-tetracy anoquinodimethane (Cu-TCNQ), aluminium tris(quinolin-8-olate) (AlQ 3 ), and poly(3,4-ethylenedioxythiophene) (PEDOT), with or without being doped.
14. The RRAM cell according to claim 12 , wherein each of the upper, middle and lower conductive electrodes has a thickness of about 1 nm-500 nm, is deposited by means of any one of Electron Beam Evaporation, Chemical Vapor Deposition, Pulsed Laser Deposition, Atom Layer Deposition, and Magnetron Sputtering, and comprises any one or more of W, Al, Cu, Au, Ag, Pt, Ru, Ti, Ta, Pb, Co, Mo, Ir, Ni, TiN, TaN, IrO 2 , ITO, and IZO.
15. A Resistive Random Access Memory (RRAM) comprising a resistance read/write unit, an addressing unit, and a plurality of RRAM cells according to claim 1 ,
wherein the addressing unit is connected to the plurality of RRAM cells, and is configured to address a RRAM cell to be operated, wherein operation on the RRAM cell comprises setting, resetting, and programming, and
wherein the resistance read/write unit is connected to the addressing unit and to the plurality of RRAM cells, and is configured to operate the addressed RRAM cell.