Nanolayer deposition process
A hybrid deposition process of CVD and ALD, called NanoLayer Deposition (NLD) is provided. The nanolayer deposition process is a cyclic sequential deposition process, comprising the first step of introducing a first plurality of precursors to deposit a thin film with the deposition process not self-limiting, then a second step of purging the first set of precursors and a third step of introducing a second plurality of precursors to modify the deposited thin film. The deposition step in the NLD process using the first set of precursors is not self limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already deposited film characteristics. The second set of precursors can treat the deposited film such as a modification of film composition, a doping or a removal of impurities from the deposited film. The second set of precursors can also deposit another layer on the deposited film. The additional layer can react with the existing layer to form a compound layer, or can have minimum reaction to form a nanolaminate film.
1. A method to deposit film on a substrate, the film comprised of a plurality of layers, the method comprising:
introducing into a reaction chamber one or more first precursors;
depositing a first layer comprising products formed from reacting the one or more first precursors on the substrate, the deposition being not self-limiting;
removing at least a portion of the one or more first precursors from the reaction chamber;
introducing into the reaction chamber one or more second precursors, wherein the one or more first precursors are different from the one or more second precursors;
depositing a second layer over the first layer comprising products formed from reacting the one or more second precursors, wherein the second layer has a different composition from the first layer;
plasma treating the first layer and the second layer to create a compound film from the first layer and the second layer;
repeating the depositing steps to deposit an additional first layer and second layer; and
repeating the plasma treating step on the additional first layer and second layer, wherein the depositing steps and the treating steps are repeated until attaining the film having desired properties.
2. The method of claim 1 wherein the plasma treating forms a homogeneous film.
3. The method of claim 1 wherein the plasma treating comprises applying a high density plasma.
4. The method of claim 1 wherein the plasma treating comprises applying a bias.
5. The method of claim 1 wherein the plasma treating comprises applying a plasma treatment with at least one of argon, hydrogen, oxygen and nitrogen.
6. The method of claim 1 wherein the plasma treating comprises applying a high pressure plasma having pressure in the range from 0.1 to 5 Torr.
7. The method of claim 1 wherein the one or more first precursors comprises an organic precursor.
8. The method of claim 1 wherein the one or more second precursors comprises an organic precursor.
9. The method of claim 1 , wherein the first layer and the second layer each have a thickness of less than a nanometer to a few nanometers.
10. The method of claim 1 , wherein the first layer and the second layer each have a thickness of less than a nanometer to two nanometers.