Method of producing a solid-state image sensing device including solid-state image sensor having a pillar-shaped semiconductor layer
It is an object to provide a CCD solid-state image sensor, in which an area of a read channel is reduced and a rate of a surface area of a light receiving portion (photodiode) to an area of one pixel is increased. There is provided a solid-state image sensor, including: a first conductive type semiconductor layer; a first conductive type pillar-shaped semiconductor layer formed on the first conductive type semiconductor layer; a second conductive type photoelectric conversion region formed on the top of the first conductive type pillar-shaped semiconductor layer, an electric charge amount of the photoelectric conversion region being changed by light; and a high-concentrated impurity region of the first conductive type formed on a surface of the second conductive type photoelectric conversion region, the impurity region being spaced apart from a top end of the first conductive type pillar-shaped semiconductor layer by a predetermined distance, wherein a transfer electrode is formed on the side of the first conductive type pillar-shaped semiconductor layer via a gate insulating film, a second conductive type CCD channel region is formed below the transfer electrode, and a read channel is formed in a region between the second conductive type photoelectric conversion region and the second conductive type CCD channel region.
1. A method of producing a solid-state image sensor, comprising the steps of:
forming a first conductive type semiconductor layer, a first conductive type pillar-shaped semiconductor layer on the first conductive type semiconductor layer, a second conductive type photoelectric conversion region on the top of the first conductive type pillar-shaped semiconductor layer, and a high-concentrated impurity region of the first conductive type on a surface of the second conductive type photoelectric conversion region, the impurity region being spaced apart from a top end of the first conductive type pillar-shaped semiconductor layer by a predetermined distance;
forming a second conductive type CCD channel region on a surface of the first conductive type semiconductor layer;
forming a gate insulating film on the side of the first conductive type pillar-shaped semiconductor layer; and
forming a transfer electrode on the side of the first conductive type pillar-shaped semiconductor layer via the gate insulating film, above the second conductive type CCD channel region.
2. The method of producing the solid-state image sensor according to claim 1 , wherein the step of forming the first conductive type semiconductor layer, the first conductive type pillar-shaped semiconductor layer on the first conductive type semiconductor layer, the second conductive type photoelectric conversion region on the top of the first conductive type pillar-shaped semiconductor layer, and the high-concentrated impurity region of the first conductive type on a surface of the second conductive type photoelectric conversion region, the impurity region being spaced apart from a top end of the first conductive type pillar-shaped semiconductor layer by the predetermined distance further includes:
forming a semiconductor layer of the first conductive type with a larger thickness than the first conductive type semiconductor layer;
forming a semiconductor layer of the second conductive type on the semiconductor layer of the first conductive type with the larger thickness than the first conductive type semiconductor layer;
forming a semiconductor layer with high-concentrated impurities of the first conductive type on the second conductive type semiconductor layer;
selectively etching the semiconductor layer of the first conductive type with the larger thickness than the first conductive type semiconductor layer, the semiconductor layer of the second conductive type, and the semiconductor layer with high-concentrated impurities of the first conductivity type to form the first conductive type semiconductor layer, the first conductive type pillar-shaped semiconductor layer on the first conductive type semiconductor layer, the second conductive type photoelectric conversion region on the top of the first conductive type pillar-shaped semiconductor layer, and the high-concentrated impurity region of the first conductive type on the upper surface of the second conductive type photoelectric conversion region;
forming an oxide film on the surface of the first conductive type semiconductor layer, the side of the second conductive type photoelectric conversion region, and the side of the first conductive type pillar-shaped semiconductor layer;
depositing a masking material on the side of the first conductive type pillar-shaped semiconductor layer, the mask material being used in forming the high-concentrated impurity region of the first conductive type on the side surface of the second conductive type photoelectric conversion region by ion implantation; and
forming the high-concentrated impurity region of the first conductive type on the side surface of the second conductive type photoelectric conversion region by ion implantation.
3. A method of producing a solid-state image sensing device, comprising the steps of:
forming a first conductive type semiconductor layer, a plurality of first conductive type pillar-shaped semiconductor layers on the first conductive type semiconductor layer, a second conductive type photoelectric conversion region on the top of each of the plurality of first conductive type pillar-shaped semiconductor layers, and a high-concentrated impurity region of the first conductive type on the surface of the second conductive type photoelectric conversion region, the impurity region being spaced apart from the top end of the first conductive type pillar-shaped semiconductor layers;
forming a second conductive type CCD channel region on the surface of the first conductive type semiconductor layer;
forming a gate insulating film on the sides of the plurality of first conductive type pillar-shaped semiconductor layers; and
forming a plurality of transfer electrodes above the second conductive type CCD channel region, the transfer electrodes including at least transfer electrodes formed on the sides of the plurality of first conductive type pillar-shaped semiconductor layers via the gate insulating films.
4. The method of producing the solid-state image sensing device according to claim 3 , wherein the step of forming the first conductive type semiconductor layer, the plurality of first conductive type pillar-shaped semiconductor layers on the first conductive type semiconductor layer, the second conductive type photoelectric conversion region on the top of each of the plurality of first conductive type pillar-shaped semiconductor layers, and the high-concentrated impurity region of the first conductive type on the surface of the second conductive type photoelectric conversion region, the impurity region being spaced apart from the top end of the first conductive type pillar-shaped semiconductor layer by the predetermined distance, further includes:
forming a semiconductor layer of the first conductive type with a larger thickness than the first conductive type semiconductor layer;
forming a semiconductor layer of the second conductive type on the semiconductor layer of the first conductive type with a larger thickness than the first conductive type semiconductor layer;
forming a semiconductor layer with high-concentrated impurities of the first conductive type on the second conductive type semiconductor layer;
selectively etching the semiconductor layer of the first conductive type thicker than the first conductive type semiconductor layer, the semiconductor layer of the second conductive type, and the semiconductor layer with high-concentrated impurities of the first conductivity type to form the first conductive type semiconductor layer, a plurality of first conductive type pillar-shaped semiconductor layers on the first conductive type semiconductor layer, a second conductive type photoelectric conversion region on the top of the plurality of first conductive type pillar-shaped semiconductor layers, and a high-concentrated impurity region of the first conductive type on the upper surface of the second conductive type photoelectric conversion region;
forming an oxide film on the surface of the first conductive type semiconductor layer, the side of the second conductive type photoelectric conversion region, and the side of the first conductive type pillar-shaped semiconductor layer;
depositing a masking material between the plurality of first conductive type pillar-shaped semiconductor layers, the mask material being used in forming the high-concentrated impurity region of the first conductive type on the side surface of the second conductive type photoelectric conversion region by ion implantation; and
forming the high-concentrated impurity region of the first conductive type on the side surface of the second conductive type photoelectric conversion region by ion implantation.
5. The method of producing the solid-state image sensing device according to claim 3 , wherein the step of forming the second conductive type CCD channel region on the surface of the first conductive type semiconductor layer is the steps of forming a second conductivity type impurity region on the surface of the first conductive type semiconductor layer between the plurality of first conductive type pillar-shaped semiconductor layers, forming an isolation region composed of high-concentrated impurities of the first conductivity type in the second conductivity type impurity region, and forming a second conductive type CCD channel region which extends in the column direction at least in respective portions between adjacent columns of the first conductive type pillar-shaped semiconductor layers, and is mutually-isolated.
6. The method of producing the solid-state image sensing device according to claim 4 , wherein the step of forming the second conductive type CCD channel region on the surface of the first conductive type semiconductor layer is the steps of forming a second conductivity type impurity region on the surface of the first conductive type semiconductor layer between the plurality of first conductive type pillar-shaped semiconductor layers, forming an isolation region composed of high-concentrated impurities of the first conductivity type in the second conductivity type impurity region, and forming a second conductive type CCD channel region which extends in the column direction at least in respective portions between adjacent columns of the first conductive type pillar-shaped semiconductor layers, and is mutually-isolated.
7. A method of producing the solid-state image sensing device according to claim 3 , wherein the step of forming the second conductive type CCD channel region on the surface of the first conductive type semiconductor layer, further includes the steps of:
forming a nitride film on the sides of the plurality of first conductive type pillar-shaped semiconductor layers and the sides of the second conductive type photoelectric conversion region;
forming a second conductive type impurity region on the surface of the first conductive type semiconductor layer between the plurality of first conductive type pillar-shaped semiconductor layers;
depositing a masking material for forming the isolation region which is composed of the high-concentrated impurities of the first conductivity type on the second conductivity type impurity region; and
forming the isolation region which is composed of the high-concentrated impurities of the first conductivity type in the second conductivity type impurity region by ion implantation, whereby a second conductive type CCD channel region which extends in the column direction at least in respective portions between adjacent columns of the first conductive type pillar-shaped semiconductor layers, and is mutually-isolated is formed.
8. A method of producing the solid-state image sensing device according to claim 4 , wherein the step of forming the second conductive type CCD channel region on the surface of the first conductive type semiconductor layer, further includes the steps of:
forming a nitride film on the sides of the plurality of first conductive type pillar-shaped semiconductor layers and the sides of the second conductive type photoelectric conversion region;
forming a second conductive type impurity region on the surface of the first conductive type semiconductor layer between the plurality of first conductive type pillar-shaped semiconductor layers;
depositing a masking material for forming the isolation region which is composed of the high-concentrated impurities of the first conductivity type on the second conductivity type impurity region; and
forming the isolation region which is composed of the high-concentrated impurities of the first conductivity type in the second conductivity type impurity region by ion implantation, whereby a second conductive type CCD channel region which extends in the column direction at least in respective portions between adjacent columns of the first conductive type pillar-shaped semiconductor layers, and is mutually-isolated is formed.
9. A method of producing the solid-state image sensing device according to claim 7 , wherein the step of forming the nitride film on the sides of the plurality of first conductive type pillar-shaped semiconductor layers and the sides of the second conductive type photoelectric conversion regions is a step of leaving the nitride film in a sidewall spacer shape on the sides of the plurality of first conductive type pillar-shaped semiconductor layers, the side of the second conductive type photoelectric conversion region, and the side of the high-concentrated impurity region of the first conductive type on the surface of the second conductive type photoelectric conversion region, by forming the nitride film on the surface of a structure formed at the previous step of this step to perform etch-back thereto.
10. A method of producing the solid-state image sensing device according to claim 8 , wherein the step of forming the nitride film on the sides of the plurality of first conductive type pillar-shaped semiconductor layers and the sides of the second conductive type photoelectric conversion regions is a step of leaving the nitride film in a sidewall spacer shape on the sides of the plurality of first conductive type pillar-shaped semiconductor layers, the side of the second conductive type photoelectric conversion region, and the side of the high-concentrated impurity region of the first conductive type on the surface of the second conductive type photoelectric conversion region, by forming the nitride film on the surface of a structure formed at the previous step of this step to perform etch-back thereto.