Light emitting diode chip having wavelength converting layer and method of fabricating the same, and package having the light emitting diode chip and method of fabricating the same
An exemplary embodiment of the present invention discloses an LED chip including a substrate, a GaN-based compound semiconductor stacked structure arranged on the substrate, an electrode electrically connected to the semiconductor stacked structure, and a wavelength converting layer covering a portion of the semiconductor stacked structure. The electrode passes through the wavelength converting layer. The semiconductor stacked structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer.
1. A light emitting diode (LED) chip, comprising:
a substrate;
a GaN-based compound semiconductor stacked structure arranged on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
an electrode electrically connected to the semiconductor stacked structure; and
a wavelength converting layer covering a portion of the semiconductor stacked structure,
wherein the electrode passes through the wavelength converting layer,
wherein the electrode comprises a first electrode arranged on the semiconductor stacked structure, and a first additional electrode arranged on the first electrode,
wherein the entire lower surface of the first additional electrode is arranged entirely on the first electrode,
wherein the wavelength converting layer is disposed with a uniform thickness on side surfaces of the substrate and the GaN-based compound semiconductor stacked structure, and
wherein the side surfaces of the substrate and the GaN-based compound semiconductor stacked structure are substantially flush.
2. The LED chip of claim 1 , further comprising a spacer layer disposed between the wavelength converting layer and the semiconductor stacked structure.
3. The LED chip of claim 2 , wherein the spacer layer comprises an insulating layer.
4. The LED chip of claim 2 , wherein the spacer layer comprises a distributed Bragg reflector (DBR).
5. The LED chip of claim 4 , wherein the spacer layer further comprises a stress relaxation layer disposed between the DBR and the semiconductor stacked structure.
6. The LED chip of claim 5 , wherein the stress relaxation layer comprises a spin on glass (SOG) or a porous silicon oxide film.
7. The LED chip of claim 1 , wherein the first additional electrode is narrower than the first electrode.
8. The LED chip of claim 7 , wherein the width of the first additional electrode decreases in a direction away from the first electrode.
9. The LED chip of claim 1 , further comprising a second electrode arranged on and electrically connected to the semiconductor stacked structure, and a second additional electrode arranged on the second electrode.
10. The LED chip of claim 1 , wherein a top surface of the first additional electrode is flush with a top surface of the wavelength converting layer.
11. The LED chip of claim 10 , wherein the top surface of the additional electrode and the top surface of the wavelength converting layer are substantially flat.
12. The LED chip of claim 10 , wherein the top surface of the first additional electrode is opposite to the first electrode, and the first additional electrode top surface is not covered by the wavelength converting layer.
13. The LED chip of claim 1 , wherein the electrode is electrically connected to the first conductivity-type semiconductor layer.
14. A light emitting diode (LED) package, comprising:
a lead terminal;
an LED chip; and
a bonding wire connecting the lead terminal and the LED chip,
wherein the LED chip comprises:
a substrate;
a GaN-based compound semiconductor stacked structure arranged on the substrate, the semiconductor stacked structure comprising a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer;
an electrode electrically connected to the semiconductor stacked structure; and
a wavelength converting layer covering a portion of the semiconductor stacked structure,
wherein the electrode passes through the wavelength converting layer, and the bonding wire connects the electrode and the lead terminal,
wherein the electrode comprises a first electrode arranged on the semiconductor stacked structure, and a first additional electrode arranged on the first electrode,
wherein the entire lower surface of the first additional electrode is arranged entirely on the first electrode,
wherein the wavelength converting layer is disposed with a uniform thickness on side surfaces of the substrate and the GaN-based compound semiconductor stacked structure, and
wherein the side surfaces of the substrate and the GaN-based compound semiconductor stacked structure are substantially flush.
15. The LED package of claim 14 , further comprising a spacer layer disposed between the wavelength converting layer and the semiconductor stacked structure.
16. The LED package of claim 14 , wherein the first additional electrode is narrower than the first electrode.
17. The LED package of claim 16 , wherein the width of the first additional electrode decreases in a direction away from the first electrode.
18. The LED package of claim 14 , wherein the electrode is electrically connected to the first conductivity-type semiconductor layer.