Reconstituted wafer package with high voltage discrete active dice and integrated field plate for high temperature leakage current stability
A reconstituted wafer level package for a versatile high-voltage capable component is disclosed. The reconstituted wafer package includes a dice substantially encapsulated by a mold material except for a first face. A dielectric layer is disposed on the first face of the dice. The package further includes an array of ball bumps formed on an exterior facing portion of the dielectric layer. Further, a field plate is disposed within the dielectric material and interposed between the first face of the dice and the ball bump array. The field plate may be spaced from the dice by a predetermined distance to prevent dielectric breakdown of the material of the dielectric layer.
1. A reconstituted wafer package comprising:
a dice having a plurality of electrical connections;
a first material encapsulating the dice except for a first surface;
a dielectric layer formed on at least a portion of the first surface of the dice, the dielectric layer including openings for contact to the plurality of electrical connections;
a plurality of conductive traces disposed within the dielectric layer and having first and second endpoints, wherein the first endpoint of each of said plurality of conductive traces is in contact with a respective one of each of said electrical connections;
a plurality of bumps disposed on the dielectric layer, wherein each of the plurality of bumps is coupled to the second endpoints; and
a field plate disposed within the dielectric layer and interposed between the dice and the plurality of bumps, wherein the field plate is spaced apart from the dice by a predetermined distance.
2. The reconstituted wafer package of claim 1 , wherein the dice further includes a field termination ring and the field plate is positioned below the field termination ring.
3. The reconstituted wafer package of claim 1 , wherein the dice further includes a field termination ring having a first surface area and wherein the field plate has a second surface area that is at least coextensive with the field termination ring.
4. The reconstituted wafer package of claim 1 , wherein the dice further includes a field termination ring and the field plate is dimensioned to substantially overlap the field termination ring.
5. The reconstituted wafer package of claim 2 , wherein the predetermined distance separating the field termination ring from the field plate is a distance in the range of approximately 25 to 300 um.
6. The reconstituted wafer package of claim 1 , wherein the field plate comprises a conductive material.
7. The reconstituted wafer package of claim 1 , further comprising a via formed within the first material encapsulant, wherein one of the plurality of conductive traces extends through the via for coupling to an electrical connection of a second surface of the dice.
8. The reconstituted wafer package of claim 1 , wherein the dielectric layer comprises an insulating material.
9. The reconstituted wafer package of claim 8 , wherein the insulating material is selected from the group consisting of a resin, epoxy, rubber, glass, silicon, ceramic, crystalline, and combinations thereof.
10. The reconstituted wafer package of claim 1 , wherein the dice is a high voltage electrical component.
11. The reconstituted wafer package of claim 10 , wherein the high voltage component is a device selected from the group consisting of a Field Effect Transistor (FET), a Metal Oxide Semiconductor (MOS) FET (MOSFET), an Insulated Gate FET (IGFET), a thyristor, a bipolar transistor, a diode, an MOS-controlled thyristor, a resistor, and a capacitor.
12. The reconstituted wafer package of claim 1 , wherein the high voltage component is operable with a potential greater than fifty (50) volts.
13. The reconstituted wafer package of claim 1 , wherein the dice is configured to receive a first positive biasing voltage having a first magnitude and the field plate is configured to receive a second positive biasing voltage having a second magnitude at least as great the first magnitude.
14. The reconstituted wafer package of claim 1 , wherein dice is configured to receive a first negative biasing voltage having a first magnitude and the field plate is configured to receive a second negative biasing voltage having a second magnitude at least as great as said first magnitude.
15. The reconstituted wafer package of claim 1 , wherein the first surface is a front side-face and the electrical connections are disposed on the front side-face.
16. The reconstituted wafer package of claim 1 , further comprising electrical connections disposed on a back side-face wherein the back side-face is on a different plane with respect to the front side-face.
17. A reconstituted wafer package comprising:
a dice having a plurality of electrical connections;
a first material encapsulating the dice except for a first surface;
a dielectric layer formed on at least a portion of the first surface of the dice, the dielectric layer including openings for contact to the plurality of electrical connections;
a plurality of conductive traces disposed within the dielectric layer and having first and second endpoints, wherein the first endpoint of each of said plurality of conductive traces is in contact with a respective one of each of said electrical connections;
a plurality of bumps disposed on the dielectric layer, wherein each of the plurality of bumps is coupled to the second endpoints; and
a field plate disposed within the dielectric layer and interposed between the dice and the plurality of bumps, wherein the field plate is spaced apart from the dice by a distance that is defined based on a characteristic of the dielectric layer.
18. The reconstituted wafer package of claim 17 , wherein the characteristic of the dielectric layer includes a dielectric strength of the dielectric layer.
19. The reconstituted wafer package of claim 17 , wherein the characteristic of the dielectric layer includes a breakdown voltage of the dielectric layer.