IP Library Granted Patent US 8,665,572
Granted Patent B2
US 8,665,572 · App. 12/851,688 · Granted Mar 4, 2014

Battery charge/discharge protection circuit

Inventor: Zutao Liu (Shanghai, CN)
Assignee: Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
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Quick Facts
Patent No.
US 8,665,572
App. No.
12/851,688
Granted
Mar 4, 2014
Kind
B2
Abstract

The present invention relates to a battery charge/discharge protection circuit that protects an associated battery from charge/discharge damage. The charge/discharge protection circuit includes a first terminal, a second terminal, a charge over-current detection circuit, a discharge over-current detection circuit, a short circuit detection circuit, and a PMOS transistor. A drain electrode and a gate electrode of the PMOS transistor are connected to the first terminal and the second terminal respectively. A source electrode of the PMOS transistor is connected to the charge over-current detection circuit, the discharge over-current detection circuit and the short circuit detection circuit, such that when a voltage above an overvoltage threshold is supported by the charger, the voltage of the source electrode of the PMOS transistor is maintained above a negative threshold voltage and the elements in these circuits do not receive such a voltage output by the charger.

Claims (22)

1. A battery charge/discharge protection circuit configured to protect the battery from charge/discharge damage, the protection circuit comprising:

a first terminal configured to be connected to a negative electrode of a charger;

a second terminal configured to be connected to a negative electrode of a rechargeable battery, wherein a positive electrode of the charger is configured to be connected to a positive electrode of the rechargeable battery;

a charge over-current detection circuit including a plurality of transistors;

a discharge over-current detection circuit including a plurality of transistors;

a short circuit detection circuit including a plurality of transistors;

a p-channel metal-oxide-semiconductor field-effect (PMOS) transistor,

wherein a drain electrode of the PMOS transistor is connected to the first terminal, a gate electrode of the PMOS transistor is connected to the second terminal, and a source electrode of the PMOS transistor is connected to the charge over-current detection circuit, the discharge over-current detection circuit, and the short circuit detection circuit;

wherein when a voltage above an overvoltage threshold is output by the charger, the voltage of the source electrode of the PMOS transistor is maintained above a negative threshold voltage, such that the transistors of the charge over-current detection circuit, the discharge over-current detection circuit and the short circuit detection circuit do not receive the voltage above the overvoltage threshold output by the charger.

2. The protection circuit of claim 1 wherein the PMOS transistor is a depletion PMOS transistor, wherein the drain electrode of the depletion PMOS transistor is resistant to negative high voltage.

3. A battery system comprising:

a rechargeable battery; and

a charge/discharge protection circuit coupled to the rechargeable battery, comprising:

a first terminal configured to be connected to a negative electrode of a charger;

a second terminal configured to be connected to a negative electrode of the rechargeable battery, wherein a positive electrode of the charger is configured to be connected to a positive electrode of the rechargeable battery;

a charge over-current detection circuit including a plurality of transistors;

a discharge over-current detection circuit including a plurality of transistors;

a short circuit detection circuit including a plurality of transistors;

a p-channel metal-oxide-semiconductor field-effect (PMOS) transistor,

wherein a drain electrode of the PMOS transistor is connected to the first terminal, a gate electrode of the PMOS transistor is connected to the second terminal, and a source electrode of the PMOS transistor is connected to the discharge over-current detection circuit, the charge over-current detection circuit, and the short circuit detection circuit;

wherein when a voltage above an overvoltage threshold is output by the charger, the voltage of the source electrode PMOS transistor is maintained above a negative threshold voltage, such that the transistors of the charge over-current detection circuit, the discharge over-current detection circuit and the short circuit detection circuit do not receive the voltage above the overvoltage threshold output by the charger.

4. The battery system of claim 3 wherein the PMOS transistor is a depletion PMOS transistor, wherein the drain electrode of the depletion PMOS is resistant to negative high voltage.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 28, 2020
From: SHANGHAI SIM-BCD SEMICONDUCTOR MANUFACTURING CO., LTD
To: BCD SHANGHAI MICRO-ELECTRONICS COMPANY LIMITED,
Reel/Frame 054751/0246 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 6, 2010
From: LIU, ZUTAO
To: SHANGHAI SIM-BCD SEMICONDUCTOR MANUFACTURING CO., LTD.
Reel/Frame 024801/0521 →
Priority Claims (1)
CN 2010 2 0201809 · May 21, 2010 · national
Continuity (1)
Related Publication 20110287283A1 · Nov 24, 2011