Process and apparatuses for preparing ultrapure silicon
A process for preparing high-purity silicon by thermal decomposition of a silicon compound includes decomposing the silicon compound by mixing with a carrier gas at a temperature at which the silicon compound is thermally decomposed.
1. A process of preparing high-purity silicon by thermal decomposition of a silicon compound comprising decomposing the silicon compound by mixing with a carrier gas at a temperature at which the silicon compound is thermally decomposed, wherein energy required for decomposition of the silicon compound is exclusively provided via the carrier gas.
2. A process of preparing high-purity silicon by thermal decomposition of a silicon compound comprising decomposing the silicon compound by mixing with a carrier gas at a temperature at which the silicon compound is thermally decomposed, wherein the carrier gas, before being mixed with the silicon compound, is heated in a plasma generator.
3. A process of preparing high-purity silicon by thermal decomposition of a silicon compound comprising:
(a) decomposing the silicon compound by mixing with a carrier gas at a temperature at which the silicon compound is thermally decomposed, wherein a mixture comprising the silicon compound, the carrier gas, silicon vapor and gaseous decomposition products is obtained, and
(b) passing the mixture into a reactor, where the silicon vapor is condensed.
4. The process according to claim 3 , wherein the mixture is introduced into the reactor at a flow rate of 200 m/sec to 400 m/sec.