Graphene-layered structure, method of preparing the same, and transparent electrode and transistor including graphene-layered structure
A method of directly growing graphene of a graphene-layered structure, the method including ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer existing on the ion implantation layer.
1. A method of preparing a graphene-layered structure, the method comprising:
ion-implanting at least one ion of a nitrogen ion and an oxygen ion on a surface of a silicon carbide (SiC) thin film to form an ion implantation layer in the SiC thin film; and
heat treating the SiC thin film with the ion implantation layer formed therein to graphenize a SiC surface layer on the ion implantation layer.
2. The method of claim 1 , wherein the ion implantation layer is a silicon nitride layer.
3. The method of claim 1 , wherein the SiC surface layer on the ion implantation layer has a thickness of about 230 nanometers or less.
4. The method of claim 1 , wherein the heat treating is performed at a temperature in a range of about 1,000° C. to about 2,000° C. for about 0.001 hour to about 10 hours.
5. The method of claim 1 , wherein the graphene-layered structure is an epitaxial structure.
6. The method of claim 1 , wherein the SiC thin film has a thickness in a range of about 100 micrometers to about 500 micrometers.
7. The method of claim 1 , wherein the ion-implanting includes implanting the ion into a Si-face of the SiC thin film.
8. The method of claim 1 , wherein the SiC thin film is doped with at least one selected from the group consisting of aluminum, boron, nitrogen, phosphorus and a transition metal.
9. The method of claim 1 , wherein the ion-implanting includes adjusting an implantation amount and energy of the ion to adjust a thickness of the ion implantation layer.
10. The method of claim 1 , wherein, during the ion-implanting, a temperature of the SiC thin film is maintained in the range of about 300° C. to about 1,000° C.