Light-emitting device, light-receiving device and method of manufacturing the same
An object of the present invention is to provide a germanium laser diode that can be easily formed on a substrate such as silicon by using a normal silicon process and can emit light efficiently. A germanium light-emitting device according to the present invention is a germanium laser diode characterized in that tensile strain is applied to single-crystal germanium serving as a light-emitting layer to be of a direct transition type, a thin semiconductor layer made of silicon, germanium or silicon-germanium is connected adjacently to both ends of the germanium light-emitting layer, the thin semiconductor layer has a certain degree of thickness capable of preventing the occurrence of quantum confinement effect, another end of the thin semiconductor layer is connected to a thick electrode doped with impurities at a high concentration, the electrode is doped to a p type and an n type, a waveguide is formed so as not to be in direct contact with the electrode, and a mirror is formed at an end of the waveguide.
1. A light-emitting device, comprising: on an insulating film formed on a substrate,
a first electrode for injecting electrons;
a second electrode for injecting holes; and
a light-emitting part disposed between the first electrode and the second electrode and electrically connected to the first electrode and the second electrode,
wherein, by applying a voltage between the first electrode and the second electrode, electrons and holes are injected to the light-emitting part in a planar direction of the substrate,
the light-emitting part is a single-crystal germanium film to which tensile strain is applied by a silicon nitride film,
a waveguide is formed spatially apart from the first electrode and the second electrode in a vertical direction orthogonal to the planar direction of the substrate, and
a mirror made of a dielectric is formed at an end or inside of the waveguide.
2. The light-emitting device according to claim 1 ,
wherein the waveguide and the light-emitting part are each made of the single-crystal germanium film.
3. The light-emitting device according to claim 1 ,
wherein the single-crystal germanium film has a film thickness of 10 nm or larger and 500 nm or smaller.
4. The light-emitting device according to claim 1 ,
wherein a surface of the light-emitting part is covered with a first dielectric, and the waveguide is made of a second dielectric disposed adjacently to the first dielectric.
5. The light-emitting device according to claim 4 ,
wherein the first dielectric is a silicon dioxide film or a silicon nitride film, and
the second dielectric is any one of a silicon nitride film, a polycrystalline silicon firm, a SiON film, an Al 2 O 3 film, a Ta 2 O 5 film, a HfO 2 film and a TiO 2 film.
6. The light-emitting device according to claim 1 ,
wherein the mirror is disposed at an end of the waveguide, and the mirror is formed by cyclically disposing small dielectric pieces.
7. The light-emitting device according to claim 4 ,
wherein each of the small dielectric pieces forming the mirror is any one of a single-crystal silicon film, a silicon nitride film, a polycrystalline silicon film, an amorphous silicon film, a SiON film, an Al 2 O 3 film, a Ta 2 O 5 film, a HfO 2 film and a TiO 2 film.
8. The light-emitting device according to claim 1 ,
wherein the mirror is arranged inside the waveguide, and the mirror is formed by disposing small dielectric pieces.
9. The light-emitting device according to claim 8 ,
wherein each of the small dielectric pieces forming the mirror is any one of a single-crystal germanium film, a single-crystal silicon film, a silicon nitride film, a polycrystalline silicon film, an amorphous silicon film, a SiON film, an Al 2 O 3 film, a Ta 2 O 5 film, a HfO 2 film and a TiO 2 film.
10. The light-emitting device according to claim 1 ,
wherein the silicon nitride film has an internal stress for applying tensile strain to the single-crystal germanium film, and
a lattice constant of the single-crystal germanium film is larger than a lattice constant in an equilibrium state.