Semiconductor devices having reduced substrate damage and associated methods
Optoelectronic devices, materials, and associated methods having increased operating performance are provided. In one aspect, for example, an optoelectronic device can include a semiconductor material, a first doped region in the semiconductor material, a second doped region in the semiconductor material forming a junction with the first doped region, and a laser processed region associated with the junction. The laser processed region is positioned to interact with electromagnetic radiation. Additionally, at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV.
1. An optoelectronic device, comprising:
a semiconductor material;
a first doped region in the semiconductor material;
a second doped region in the semiconductor material forming a junction with the first doped region; and
a laser processed region associated with the junction and configured to interact with electromagnetic radiation, wherein at least a portion of a region of laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 500 mV to about 800 mV.
2. The device of claim 1 , wherein laser damage from the laser processed region has been removed such that the optoelectronic device has an open circuit voltage of from about 600 mV to about 700 mV.
3. The device of claim 1 , wherein the optoelectronic device has an internal quantum efficiency of from about 50% to about 100% for an electromagnetic radiation wavelength of 300 nm.
4. The device of claim 1 , wherein the optoelectronic device has an internal quantum efficiency of from about 70% to about 100% for an electromagnetic radiation wavelength of 400 nm.
5. The device of claim 1 , wherein laser damage from the laser processed region has been substantially removed.
6. The device of claim 1 , wherein the semiconductor material includes a member selected from the group consisting of group IV materials, compounds and alloys comprising materials from groups II and VI, compounds and alloys comprising materials from groups III and V, and combinations thereof.
7. The device of claim 1 , wherein the semiconductor material includes a member selected from the group consisting of Si, GaAs, Ge, CIGS, CdTe, and alloys and combinations thereof.
8. The device of claim 1 , wherein the semiconductor material includes Si.
9. The device of claim 8 , wherein the Si includes a member selected from the group consisting of monocrystalline, multicrystalline, microcrystalline, polycrystalline, and combinations thereof.
10. The device of claim 8 , wherein the Si is multicrystalline.
11. The device of claim 1 , wherein the laser processed region is adjacent to the first doped region.
12. The device of claim 1 , wherein the first doped region is the laser processed region.
13. The device of claim 1 , further comprising a dielectric layer disposed on the first doped region wherein the laser processed region is formed from the dielectric layer.
14. The device of claim 1 , wherein the laser processed region includes surface features having a height selected from the group consisting of micron-sized, nano-sized, and combinations thereof.
15. The device of claim 14 , wherein the surface features have a height of from about 5 nm to about 10 μm.
16. The device of claim 14 , wherein the surface features have a height of from about 50 nm to about 2 μm.
17. The device of claim 14 , wherein the surface features include a member selected from the group consisting of cones, pillars, pyramids, micro lenses, sphere-like structures, quantum dots, inverted features, and combinations thereof.
18. A semiconductor material, comprising:
a first region disposed adjacent to a second region, wherein the first region has a thickness in the range of about 100 nm to about 5 microns and includes a laser processed region that has undergone a laser damage removal process, and wherein the majority-carrier mobility and minority-carrier lifetime of the first region are at least about 50% the value of the second region, and wherein the first region and the second region have substantially the same doping levels.
19. The semiconductor material of claim 18 , wherein the laser processed region has surface features following the laser damage removal process that have a height of from about 5 nm to about 10 μm.
20. The semiconductor material of claim 18 , wherein the laser processed region has surface features following the laser damage removal process that have a height of from about 50 nm to about 2 μm.
21. The semiconductor material of claim 18 , wherein the laser processed region has been formed via a pulsed laser having a pulse duration of from about 5 femtoseconds to about 900 picoseconds.