Power storage device and method for manufacturing the same
A power storage device including a negative electrode having high cycle performance in which little deterioration due to charge and discharge occurs is manufactured. A power storage device including a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode is manufactured, in which the negative electrode includes a negative electrode current collector and a negative electrode active material layer, and the negative electrode active material layer includes an uneven silicon layer formed over the negative electrode current collector, a silicon oxide layer or a mixed layer which includes silicon oxide and a silicate compound and is in contact with the silicon layer, and graphene in contact with the silicon oxide layer or the mixed layer including the silicon oxide and the silicate compound.
1. A power storage device comprising:
a positive electrode;
a negative electrode including a negative electrode current collector and a negative electrode active material layer; and
an electrolyte provided between the positive electrode and the negative electrode,
wherein the negative electrode active material layer includes:
an uneven silicon layer over the negative electrode current collector;
a first layer including silicon oxide, the first layer being over and in contact with the uneven silicon layer; and
graphene in contact with the first layer.
2. The power storage device according to claim 1 , wherein the first layer has a thickness greater than or equal to 2 nm and less than or equal to 10 nm.
3. The power storage device according to claim 1 , wherein the uneven silicon layer includes crystalline silicon.
4. The power storage device according to claim 1 , wherein the uneven silicon layer includes amorphous silicon.
5. The power storage device according to claim 1 , wherein the uneven silicon layer includes crystalline silicon and amorphous silicon covering the crystalline silicon.
6. The power storage device according to claim 1 ,
wherein the first layer includes the silicon oxide and a silicate compound.
7. An electric device comprising the power storage device according to claim 1 .
8. A power storage device comprising:
a positive electrode;
a negative electrode including a negative electrode current collector and a negative electrode active material layer; and
an electrolyte provided between the positive electrode and the negative electrode,
wherein the negative electrode active material layer includes:
a silicon layer over the negative electrode current collector, the silicon layer including a common portion and a projected portion;
a first layer including silicon oxide, the first layer being over and in contact with the silicon layer; and
graphene over and in contact with the first layer,
wherein the common portion is in contact with an entire surface of the negative electrode current collector, and
wherein the projected portion is extended from the common portion.
9. The power storage device according to claim 8 , wherein the first layer has a thickness greater than or equal to 2 nm and less than or equal to 10 nm.
10. The power storage device according to claim 8 , wherein the silicon layer includes crystalline silicon.
11. The power storage device according to claim 8 , wherein the silicon layer includes amorphous silicon.
12. The power storage device according to claim 8 , wherein the silicon layer includes crystalline silicon and amorphous silicon covering the crystalline silicon.
13. The power storage device according to claim 8 ,
wherein the first layer includes the silicon oxide and a silicate compound.
14. An electric device comprising the power storage device according to claim 8 .
15. A power storage device comprising:
a positive electrode;
a negative electrode including a negative electrode current collector and a negative electrode active material layer; and
an electrolyte provided between the positive electrode and the negative electrode,
wherein the negative electrode active material layer includes:
a silicon layer over the negative electrode current collector, the silicon layer including a common portion and a projected portion;
a first layer including silicon oxide, the first layer being over and in contact with the silicon layer; and
graphene over and in contact with the first layer,
wherein the common portion is in contact with an entire surface of the negative electrode current collector,
wherein the projected portion is extended from the common portion,
wherein the silicon layer includes a core which is included in the common portion and the projected portion,
wherein the core includes crystalline silicon and the silicon layer includes amorphous silicon covering the crystalline silicon.
16. The power storage device according to claim 15 , wherein the first layer has a thickness greater than or equal to 2 nm and less than or equal to 10 nm.
17. The power storage device according to claim 15 ,
wherein the first layer includes the silicon oxide and a silicate compound.
18. An electric device comprising the power storage device according to claim 15 .