Insulated gate bipolar transistor (IGBT) with hole stopper layer
A semiconductor device has a first conductivity-type semiconductor substrate, second conductivity-type channel regions, and second conductivity-type thinning-out regions. The channel regions and the thinning-out regions are formed adjacent to a substrate surface of the semiconductor substrate. Further, a hole stopper layer is formed in each of the thinning-out regions to divide the thinning-out region into a first part adjacent to the substrate surface and a second part adjacent to a bottom of the thinning-out region. The hole stopper layer has an area density of equal to or less than 4.0×10 12 cm −2 to permit a depletion layer to punch through the hole stopper layer, thereby to restrict breakdown properties from being decreased.
1. A semiconductor device comprising:
a first conductivity-type semiconductor substrate having a substrate surface;
a plurality of second conductivity-type channel regions disposed adjacent to the substrate surface;
a plurality of second conductivity-type thinning-out regions disposed adjacent to the substrate surface, the thinning-out regions and the channel regions being arranged in a direction parallel to the substrate surface in such a manner that at least one thinning-out region is disposed between the adjacent channel regions;
a first conductivity-type emitter region disposed at a surface layer portion of each of the channel regions;
a first conductivity-type hole stopper layer disposed in each of the thinning-out regions to divide the thinning-out region into a first part adjacent to the substrate surface and a second part adjacent to a bottom of the thinning-out region;
an emitter electrode connected to the emitter region and the first part;
a collector layer disposed in the semiconductor substrate at a position separated from the channel regions and the thinning-out regions; and
a collector electrode electrically connected to the collector layer, wherein
the hole stopper layer has an area density of equal to or less than 4.0×10 12 cm −2 .
2. The semiconductor device according to claim 1 , wherein the first part has an area density of equal to or greater than 1.1×10 12 cm −2 .
3. The semiconductor device according to claim 1 , wherein
the collector layer provides a first conductivity-type cathode layer at a part, and
the semiconductor substrate includes an IGBT section serving as an IGBT element and a diode section serving as a diode element with respect to a direction parallel to the substrate surface, the IGBT section being defined by a section including the collector layer other than the cathode layer, the diode section being defined by a section including the cathode layer.
4. The semiconductor device according to claim 3 , wherein the area density of the first part is equal to or less than 3.5×10 12 cm −2 .
5. The semiconductor device according to claim 3 , wherein the hole stopper layer is disposed also in the diode section.
6. The semiconductor device according to claim 3 wherein
the semiconductor substrate includes a drift region serving as a drift layer, and
the drift region is formed with a lifetime killer.
7. The semiconductor device according to claim 1 , wherein
the semiconductor substrate has a second conductivity-type base layer adjacent to the substrate surface, and a plurality of trenches passing through the base layer to divide the base layer into multiple regions,
the channel regions and the thinning-out regions are provided by the multiple regions of the base layer divided by the trenches, and
each of the trenches is filled with a gate insulation film and a gate electrode, the gate insulation film being disposed on a wall surface of the trench, and the gate electrode being disposed on the gate insulation film.