IP Library Granted Patent US 8,735,874
Granted Patent B2
US 8,735,874 · App. 13/363,686 · Granted May 27, 2014

Light-emitting device, display device, and method for manufacturing the same

Inventors: Shunpei Yamazaki (Setagaya, JP); Takaaki Nagata (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,735,874
App. No.
13/363,686
Granted
May 27, 2014
Kind
B2
Abstract

It is known that a light-emitting element utilizing organic EL deteriorates due to moisture. Therefore, a sealing technique to prevent moisture permeation is important. A light-emitting device including a light-emitting element utilizing organic EL is manufactured over a support substrate having flexibility and a high heat dissipation property (e.g., stainless steel or duralumin), and the light-emitting device is sealed with a stack body having moisture impermeability and a high light-transmitting property or with glass having moisture impermeability and a high light-transmitting property and having a thickness greater than or equal to 20 μm and less than or equal to 100 μm.

Claims (31)

1. A light-emitting device comprising:

a first substrate having flexibility;

a base insulating film over the first substrate;

first and second electrodes over the base insulating film;

a first partition wall covering an end portion of the first electrode and an end portion of the second electrode;

a second partition wall over the first electrode;

an organic EL layer over the first electrode, the first partition wall, and the second partition wall;

a third electrode covering the organic EL layer, the second electrode having a light-transmitting property in a visible light region;

a second substrate having a vapor permeability coefficient lower than or equal to 1×10 −7 g/(m 2 ·day); and

a sealant,

wherein the first substrate and the second substrate are bonded to each other with the sealant.

2. The light-emitting device according to claim 1 , wherein the first substrate comprises one of stainless steel and duralumin.

3. The light-emitting device according to claim 1 , wherein the second substrate is a glass substrate having a thickness greater than or equal to 20 μm and less than or equal to 100 μm.

4. The light-emitting device according to claim 1 , wherein the second substrate comprises a stacked body that includes one of a sheet having a gas barrier property and a resin, and a film including two or more materials selected from silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, aluminum nitride, silicon carbide, diamond-like carbon, or a high molecular material, provided over the one of the sheet having the gas barrier property and the resin.

5. The light-emitting device according to claim 1 , wherein a space between the first substrate and the second substrate is filled with an organic compound having a light-transmitting property in a visible light region or an inorganic compound having a light-transmitting property in a visible light region.

6. The light-emitting device according to claim 1 , further comprising a structure with a lens shape over the second substrate, the structure including a resin.

7. A light-emitting device comprising:

a first substrate having flexibility;

a base insulating film over the first substrate;

first and second electrodes over the base insulating film;

a first partition wall over and in contact with an end portion of the first electrode and an end portion of the second electrode;

a second partition wall over the first electrode;

an organic EL layer over the first electrode, the first partition wall, and the second partition wall;

a third electrode over the organic EL layer, the third electrode having a light-transmitting property in a visible light region;

a second substrate over the third electrode, the second substrate having a vapor permeability coefficient lower than or equal to 1×10 −7 g/(m 2 ·day); and

a sealant between the first substrate and the second substrate.

8. The light-emitting device according to claim 7 , wherein the first substrate comprises one of stainless steel and duralumin.

9. The light-emitting device according to claim 7 , wherein the second substrate is a glass substrate having a thickness greater than or equal to 20 μm and less than or equal to 100 μm.

10. The light-emitting device according to claim 7 , wherein the second substrate comprises a stacked body that includes one of a sheet having a gas barrier property and a resin, and a film including two or more materials selected from silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, aluminum nitride, silicon carbide, diamond-like carbon, or a high molecular material, provided over the one of the sheet having the gas barrier property and the resin.

11. The light-emitting device according to claim 7 , wherein a space between the first substrate and the second substrate is filled with an organic compound having a light-transmitting property in a visible light region or an inorganic compound having a light-transmitting property in a visible light region.

12. The light-emitting device according to claim 7 , further comprising a structure with a lens shape over the second substrate, the structure including a resin.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 1, 2012
From: YAMAZAKI, SHUNPEI; NAGATA, TAKAAKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 027632/0817 →
Priority Claims (1)
JP 2011-028866 · Feb 14, 2011 · national
Continuity (1)
Related Publication 20120205698A1 · Aug 16, 2012