Semiconductor device and method for manufacturing same

1. A semiconductor device comprising:

a first laminate having a wiring layer formed on a substrate;

a second laminate having a wiring layer formed on a substrate, a principal surface of the second laminate being bonded to a principal surface of said first laminate;

a functional element disposed in at least one of said first laminate and said second laminate;

an air gap penetrating an interface between said first laminate and said second laminate, the air gap being disposed on an outside of a circuit formation region including said functional element in at least one of said first laminate and said second laminate as viewed from a direction perpendicular to the principal surfaces of said first laminate and said second laminate, wherein said air gap is a groove penetrating said second laminate;

a seal ring enclosing the circuit formation region of said first laminate and said second laminate as viewed from a direction perpendicular to said principal surface of said first laminate, wherein said groove is disposed on an outside of said seal ring, and a bottom surface of said groove coincides with a surface of wiring within said first laminate; and

a penetrating metallic member penetrating said substrate of said second laminate and said interface, wherein said penetrating metallic member is connected to wiring in a same layer as said wiring coinciding with the bottom surface of said groove.

2. The semiconductor device according to claim 1 ,

wherein said penetrating metallic member forms the seal ring.

3. The semiconductor device according to claim 1 ,

wherein said groove is formed so as to enclose said seal ring as viewed from a direction perpendicular to the principal surface of said first laminate.

4. The semiconductor device according to claim 3 ,

wherein said seal ring is formed in both of said first laminate and said second laminate.

5. A method for manufacturing a semiconductor device, the method comprising:

forming a first laminate having a wiring layer formed on a substrate, a second laminate having a wiring layer formed on a substrate, and a functional element disposed in at least one of said first laminate and said second laminate;

bonding a principal surface of said first laminate and a principal surface of said second laminate to each other;

disposing a groove penetrating an interface between said first laminate and said second laminate and having an opening in a principal surface of one of said first laminate and said second laminate, the principal surface being on an opposite side from the bonded surface of one of said first laminate and said second laminate, on an outside of a circuit formation region of said first laminate and said second laminate;

forming a seal ring enclosing the circuit formation region of said first laminate and said second laminate as viewed from a direction perpendicular to said principal surface of said first laminate, wherein said groove is disposed on an outside of said seal ring, and a bottom surface of said groove coincides with a surface of wiring within said first laminate; and

forming a penetrating metallic member penetrating said substrate of said second laminate and said interface, wherein said penetrating metallic member is connected to wiring in a same layer as said wiring coinciding with the bottom surface of said groove.

6. A method for manufacturing a semiconductor device, the method comprising:

forming a first laminate having a wiring layer formed on a substrate, a second laminate having a wiring layer formed on a substrate, and a functional element disposed in at least one of said first laminate and said second laminate;

forming a groove in a principal surface of said first laminate and a groove in a principal surface of said second laminate on an outside of a circuit formation region of said first laminate and said second laminate;

performing alignment such that said groove disposed in said first laminate and said groove disposed in said second laminate communicate with each other, and bonding said principal surfaces of said first laminate and said second laminate to each other;

forming a seal ring enclosing the circuit formation region of said first laminate and said second laminate as viewed from a direction perpendicular to said principal surface of said first laminate, wherein said groove is disposed on an outside of said seal ring, and a bottom surface of said groove coincides with a surface of wiring within said first laminate; and

forming a penetrating metallic member penetrating said substrate of said second laminate and said interface, wherein said penetrating metallic member is connected to wiring in a same layer as said wiring coinciding with the bottom surface of said groove.

7. The method according to claim 5 , wherein said penetrating metallic member forms the seal ring.

8. The method according to claim 5 , wherein said groove is formed so as to enclose said seal ring as viewed from a direction perpendicular to the principal surface of said first laminate.

9. The method according to claim 8 , wherein said seal ring is formed in both of said first laminate and said second laminate.

10. The method according to claim 6 , wherein said penetrating metallic member forms the seal ring.

11. The method according to claim 6 , wherein said groove is formed so as to enclose said seal ring as viewed from a direction perpendicular to the principal surface of said first laminate.

12. The method according to claim 11 , wherein said seal ring is formed in both of said first laminate and said second laminate.