Display device, method for manufacturing display device, and SOI substrate
View Patent ↗A manufacturing method is provided which achieves an SOI substrate with a large area and can improve productivity of manufacture of a display device using the SOI substrate. A plurality of single-crystalline semiconductor layers are bonded to a substrate having an insulating surface, and a circuit including a transistor is formed using the single-crystalline semiconductor layers, so that a display device is manufactured. Single-crystalline semiconductor layers separated from a single-crystalline semiconductor substrate are applied to the plurality of single-crystalline semiconductor layers. Each of the single-crystalline semiconductor layers has a size corresponding to one display panel (panel size).
1. A method for manufacturing a display device, comprising the steps of:
forming a plurality of projected portions each having an area including one panel in a first substrate by etching the first substrate;
implanting an ion into the first substrate to form a plurality of single-crystalline semiconductor layers each having an area including one panel in the plurality of projected portions, respectively;
bonding the plurality of single-crystalline semiconductor layers to a second substrate with an insulating layer interposed therebetween;
exposing a first single-crystalline semiconductor layer and a second single-crystalline semiconductor layer each selected from the plurality of single-crystalline semiconductor layers at a time, wherein each of the first single-crystalline semiconductor layer and the second single-crystalline semiconductor layer has an area including one panel; and
patterning the first single-crystalline semiconductor layer and the second singel-crystalline semiconductor layer to form a first display portion over the second substrate by using a patterned first single-crystalline semiconductor layer and a second display portion over the second substrate by using a patterned second single-crystalline semiconductor layer,
wherein the insulating layer is a silicon oxide layer formed by a chemical vapor deposition method using an organic silane as a source gas.
2. The method for manufacturing a display device according to claim 1 , wherein the organic silane is one selected from the group consisting of tetraethoxysilane, trimethylsilane, tetramethylsilane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane.
3. The method for manufacturing a display device according to claim 1 , wherein the first single-layer semiconductor layer and the second single-crystalline semiconductor layer are provided in a range exposed one time with a light exposure apparatus.
4. The method for manufacturing a display device according to claim 1 , wherein the first substrate is a semiconductor substrate.
5. The method for manufacturing a display device according to claim 1 , wherein the second substrate is one selected from the group consisting of an aluminosilicate glass, an aluminoborosilicate glass, a barium borosilicate glass, a quartz substrate, a sapphire substrate, and a ceramic substrate.
6. The method for manufacturing a display device according to claim 1 , wherein the area including one panel is less than 10 inches in diagonal line.
7. A method for manufacturing a display device, comprising the steps of:
forming a plurality of projected portions each having an area including one panel in a first substrate by etching the first substrate;
implanting an ion into the first substrate to form a plurality of single-crystalline semiconductor layers each having an area including one panel in the plurality of projected portions, respectively;
bonding the plurality of single-crystalline semiconductor layers to a second substrate with an insulating layer interposed therebetween; and
patterning the plurality of single-crystalline semiconductor layers to form a plurality of display portions over the second substrate by using each of a plurality of patterned single-crystalline semiconductor layers,
wherein the insulating layer is a silicon oxide layer formed by a chemical vapor deposition method using an organic silane as a source gas.
8. The method for manufacturing a display device according to claim 7 , wherein the organic silane is one selected from the group consisting of tetraethoxysilane, trimethylsilane, tetramethylsilane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane.
9. The method for manufacturing a display device according to claim 7 , wherein the first substrate is a semiconductor substrate.
10. The method for manufacturing a display device according to claim 7 , wherein the second substrate is one selected from the group consisting of an aluminosilicate glass, an aluminoborosilicate glass, a barium borosilicate glass, a quartz substrate, a sapphire substrate, and a ceramic substrate.
11. The method for manufacturing a display device according to claim 7 , wherein the area including one panel is less than 10 inches in diagonal line.
12. The method for manufacturing a display device according to claim 7 , wherein the plurality of single-crystalline semiconductor layers including at least a first single-crystalline semiconductor layer, a second single-crystalline semiconductor layer, a third single-crystalline semiconductor layer, and a fourth single-crystalline semiconductor layer each having the area including one panel.
13. The method for manufacturing a display device according to claim 12 , further comprising the steps of:
exposing a first group including at least the first single-crystalline semiconductor layer and the second single-crystalline semiconductor layer after bonding the plurality of single-crystalline semiconductor layers to the second substrate; and
exposing a second group including at least the third single-crystalline semiconductor layer and the fourth single-crystalline semiconductor layer after exposing the first group and before patterning the plurality of single-crystalline semiconductor layers.
14. A method for manufacturing a display device, comprising the steps of:
forming a plurality of projected portions each having an area including one panel in a semiconductor substrate by etching the semiconductor substrate;
implanting an ion into the semiconductor substrate to form an ion-doped layer in each of the plurality of projected portions, respectively;
bonding the plurality of projected portions to a base substrate with an insulating layer interposed therebetween;
forming a plurality of semiconductor layers over the base substrate by separating the plurality of projected portions each along a part of the ion-doped layer, wherein the plurality of semiconductor layers including at least a first semiconductor layer and a second semiconductor layer each having the area including one panel;
exposing a group including at least the first semiconductor layer and the second semiconductor layer; and
patterning at least the first semiconductor layer and the second semiconductor layer to form a first display portion using a patterned first semiconductor layer and to form a second display portion using a patterned second semiconductor layer,
wherein the step of patterning is performed after the step of bonding, and
wherein the insulating layer is a silicon oxide layer formed by a chemical vapor deposition method using an organic silane as a source gas.
15. The method for manufacturing a display device according to claim 14 , wherein the organic silane is one selected from the group consisting of tetraethoxysilane, trimethylsilane, tetramethylsilane, tetramethylcyclotetrasiloxane, octamethylcyclotetrasiloxane, hexamethyldisilazane, triethoxysilane, and trisdimethylaminosilane.
16. The method for manufacturing a display device according to claim 14 , wherein the group including at least the first semiconductor layer and the second semiconductor layer is provided in a range exposed one time with a light exposure apparatus.
17. The method for manufacturing a display device according to claim 14 , wherein the semiconductor substrate is a single-crystalline semiconductor substrate.
18. The method for manufacturing a display device according to claim 14 , wherein the base substrate is one selected from the group consisting of an aluminosilicate glass, an aluminoborosilicate glass, a barium borosilicate glass, a quartz substrate, a sapphire substrate, and a ceramic substrate.
19. The method for manufacturing a display device according to claim 14 , wherein the area including one panel is less than 10 inches in diagonal line.