Electronic device with dual semiconducting layer

1. An electronic device including a semiconducting bilayer, the semiconducting bilayer comprising:

a first sublayer including a first semiconductor and carbon nanotubes, the first semiconductor being a polythiophene; and

a second sublayer including a second semiconductor and not containing carbon nanotubes,

wherein the carbon nanotubes include from about 15 to about 40 wt % of the first sublayer, based on a total weight of the first semiconductor and the carbon nanotubes.

2. The electronic device of claim 1 , wherein the second semiconductor is a polythiophene.

3. The electronic device of claim 2 , wherein the first semiconductor polythiophene and the second semiconductor polythiophene each have the structure of Formula (II):

wherein m is from 2 to about 2,500.

4. The electronic device of claim 1 , wherein the first semiconductor polythiophene and the second semiconductor independently have a structure of Formula (I):

wherein A is a divalent linkage; each R is independently selected from hydrogen, alkyl, substituted alkyl, alkenyl, substituted alkenyl, alkynyl, substituted alkynyl, aryl, substituted aryl, alkoxy, substituted alkoxy, a heteroatom-containing group, halogen, —CN, or —NO 2 ; and n is from 2 to about 5,000.

5. The electronic device of claim 4 , wherein R is alkyl having from about 6 to about 25 carbon atoms.

6. The electronic device of claim 1 , wherein the first sublayer comprises polymer aggregates of the first semiconductor separating the carbon nanotubes.

7. The electronic device of claim 1 , wherein the first sublayer comprises nano aggregates formed by the first semiconducting polymer wrapping around a carbon nanotube.

8. The electronic device of claim 1 , wherein the first sublayer has a thickness of less than 10 nanometers.

9. The electronic device of claim 1 , wherein the carbon nanotubes are surface-modified carbon nanotubes.

10. The electronic device of claim 1 , wherein the carbon nanotubes are single-wall carbon nanotubes.

11. The electronic device of claim 1 , further comprising a dielectric layer; wherein the first sublayer contacts the dielectric layer.

12. A process for producing a semiconductor layer of an electronic device, the process comprising:

liquid depositing a first semiconducting composition onto a dielectric layer to form a first semiconducting sublayer;

optionally drying the first sublayer; and

liquid depositing a second semiconducting composition onto the first semiconducting sublayer to form a second semiconducting sublayer;

wherein the first semiconducting sublayer includes a first polythiophene and carbon nanotube,

wherein the carbon nanotubes include from about 15 to about 40 wt % of the first semiconducting sublayer, based on a total weight of the first polythiophene and the carbon nanotubes,

wherein the second semiconducting sublayer includes a second polythiophene and does not contain carbon nanotubes; and

optionally annealing the first sublayer and the second sublayer together to form the semiconductor layer.

13. The process of claim 12 , wherein the first polythiophene has the structure of Formula (II):

wherein m is from 2 to about 2,500.

14. A thin-film transistor, comprising:

a dielectric layer and a semiconducting bilayer,

wherein the semiconducting bilayer includes,

a first sublayer including a first semiconductor polythiophene and carbon nanotubes, and

a second sublayer including a second semiconductor and not containing carbon nanotubes,

wherein the first sublayer is between the dielectric layer and the second sublayer,

wherein the first polythiophene has the structure of Formula (I):

wherein A is a divalent linkage; each R is independently selected from hydrogen, alkyl, substituted alkyl, alkenyl, substituted alkenyl, alkynyl, substituted alkynyl, aryl, substituted aryl, alkoxy, substituted alkoxy, a heteroatom-containing group, halogen, —CN, or —NO 2 ; and n is from 2 to about 5,000, and

wherein the carbon nanotubes include from about 15 to about 40 wt % of the first sublayer, based on a total weight of the first semiconductor polythiophene and the carbon nanotubes.

15. The thin-film transistor of claim 14 , wherein the second semiconductor is the same as the first semiconductor polythiophene.

16. The thin-film transistor of claim 14 , wherein the first semiconductor polythiophene and the second semiconductor independently have the structure of Formula (II):

wherein m is from 2 to about 2,500.

17. The thin-film transistor of claim 14 , wherein the carbon nanotubes are single-wall carbon nanotubes, and the first sublayer has a thickness of less than 10 nm.