Light emitting device and method thereof
Disclosed are a method of fabricating a light emitting device includes the steps of: forming a plurality of compound semiconductor layers on a substrate, the substrate including a plurality of chip regions and isolation region; selectively etching the compound semiconductor layers to form a light emitting structure on each chip region and form a buffer structure on the isolation region; forming a conductive support member on the light emitting structure and the buffer structure; removing the substrate by using a laser lift off process; and dividing the conductive support member into the a plurality of chips of the chip regions, wherein the buffer structure is spaced apart from the light emitting structure.
1. A light emitting device comprising:
a conductive support member;
a chip region on the conductive support member;
a light emitting structure on the chip region;
an isolation region on the conductive support member and surrounding the chip region;
at least one buffer structure on the isolation region;
a first protective layer on lateral surfaces of the light emitting structure;
a second protective layer on at least one lateral surface of the buffer structure; and
an insulating layer on the conductive support member between the light emitting structure and the buffer structure,
wherein the light emitting structure and the buffer structure include a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer.
2. The light emitting device of claim 1 , wherein the buffer structures are spaced apart from edge regions of the light emitting structure and are separated from each other.
3. The light emitting device of claim 2 , wherein the buffer structure has a top surface formed in one of a cross shape, a circular shape, a diamond shape, a sector shape, a hemi-circular shape, a polygonal shape, or a ring shape.
4. The light emitting device of claim 1 , wherein the buffer structure are spaced apart from edges region and lateral surfaces of the light emitting structure and are formed in a line along the lateral surfaces of the light emitting structure.
5. The light emitting device of claim 1 , wherein a distance between the light emitting structure and the buffer structure is in a range of about 5 μm to about 50 μm.
6. The light emitting device of claim 1 , wherein the buffer structure has a width in a range of about 5 μm to about 30 μm.
7. The light emitting device of claim 1 , wherein the light emitting structure and the buffer structure further include:
a first adhesive layer on the conductive support member;
a second adhesive layer on the first adhesive layer;
a reflective layer on the second adhesive layer; and
a diffusion barrier layer on lateral surfaces of the second adhesive layer and the reflective layer.
8. The light emitting device of claim 1 , further comprising an electrode on the light emitting structure, wherein power is supplied by the electrode and the conductive support member.
9. The light emitting device of claim 1 , wherein the buffer structure is positioned at a region corresponding to about ½ of a width of the isolation region.
10. The light emitting device of claim 9 , wherein the width of the isolation region is in a range of about 5 μm to about 100 μm.
11. The light emitting device of claim 1 , wherein buffer structures are spaced apart from an edge region and a lateral surface of the light emitting structure.
12. The light emitting device of claim 1 , wherein the buffer structure includes a zener device.
13. The light emitting device of claim 12 , wherein the zener device includes:
a first zener electrode electrically connecting the first conductive semiconductor layer of the buffer structure to the second conductive semiconductor layer of the light emitting structure; and
a second zener electrode electrically connecting the second conductive semiconductor layer of the buffer layer to the conductive support member.
14. The light emitting device of claim 13 , wherein the first zener electrode is provided on both the first protective layer and the insulating layer.
15. The light emitting device of claim 13 , wherein the second zener electrode is provided on the second protective layer.
16. A light emitting device comprising:
a conductive support member;
a light emitting structure on the conductive support member;
at least one buffer structure on the conductive support member and surrounding the light emitting structure;
a first protective layer on lateral surfaces of the light emitting structure;
a second protective layer on at least one lateral surface of the buffer structure; and
a reflective layer between the light emitting structure and the conductive support member,
wherein a portion of the first protective layer is disposed between the reflective layer and the light emitting structure.
17. The light emitting device of claim 16 , wherein the buffer structures are spaced apart from edge regions of the light emitting structure and are separated from each other.
18. The light emitting device of claim 16 , wherein the buffer structures are spaced apart from edges region and lateral surfaces of the light emitting structure and are formed in a line along the lateral surfaces of the light emitting structure.
19. A light emitting device comprising:
a support member;
an adhesive layer on the support member;
a light emitting structure on the adhesive layer;
at least one buffer structure on the adhesive layer and spaced apart from the light emitting structure;
an insulating layer between the light emitting structure and the buffer structure; and
a reflective layer under the light emitting device and the buffer structure,
wherein the insulating layer contacts the reflective layer.
20. The light emitting device of claim 19 , wherein the insulating layer contacts a top surface of the adhesive layer.