SRAM devices and methods of manufacturing the same
Example embodiments relate to an SRAM device and a method of manufacturing the same. The SRAM device may include first transistors operating in a horizontal direction and second transistors that are disposed on the first transistors to operate in a vertical direction. In example embodiments, the second transistors may be vertically connected to the first transistors. In example embodiments, the second transistors may be vertical transistors that include vertical gates surrounding vertical channels.
1. An SRAM device, comprising:
a first access transistor, a second access transistor, a first driver transistor, and a second driver transistor on a first substrate;
a first load transistor on the second driver transistor and a second load transistor on the first driver transistor;
a first shared contact electrically connecting a gate of the first load transistor to a source of the second access transistor and electrically connecting the gate of the first load transistor to a gate of the first driver transistor;
a second shared contact electrically connecting a gate of the second load transistor to a source of the first access transistor and electrically connecting the gate of the second load transistor to a gate of the second driver transistor;
a first contact between the second load transistor and the gate of the first driver transistor to electrically connect the second load transistor to the first driver transistor; and
a second contact between the first load transistor and the gate of the second driver transistor to electrically connect the first load transistor to the second driver transistor, wherein the first access transistor, the second access transistor, the first driver transistor, and the second driver transistor are configured to operate horizontally and the first and second load transistors are configured to operate vertically.
2. The SRAM device of claim 1 , wherein the first shared contact is on a side and a top of the gate of the first driver transistor and the second shared contact is on a top and a side of the gate of the second driver transistor.
3. The SRAM device of claim 2 , wherein
the first load transistor includes a first gate surrounding a first channel arranged between a first source and a first drain, and
the second load transistor includes a second gate surrounding a second channel arranged between a second source and a second drain.
4. The SRAM device of claim 3 , further comprising:
a first via electrically connecting the first shared contact to the first gate of the first load transistor; and
a second via electrically connecting the second shared contact to the second gate of the second load transistor.
5. The SRAM device of claim 1 , further comprising:
a first bit line electrically connected to a drain of the first access transistor;
a second bit line electrically connected to a drain of the second access transistor;
a wordline electrically connected gates of the first and second access transistors;
a power supply line electrically connected to the first and second load transistors; and
a ground line electrically connected to sources of the first and second driver transistors.