Ketopyrroles as organic semiconductors

1. A semiconductor device which contains a layer comprising a compound of the formula (I) or an oligomer or polymer comprising repeating units of the formula (Ia)

wherein a, b, c, d, e and f are from the range 0-3;

each of A, A′, R 1 , R 2 independently are selected from hydrogen; E; C 1 -C 25 alkyl, C 2 -C 25 alkenyl, C 2 -C 24 alkynyl, each of which may optionally be substituted by E and/or in any C,C-single bond, if present, interrupted by D; a cycloalkyl group, which can be substituted by E, one to three times by C 1 -C 8 alkyl, C 1 -C 8 thioalkoxy, or C 1 -C 8 alkoxy; or a cycloalkyl group, which can be condensed one or two times by unsubstituted phenyl or phenyl substituted by E, phenyl substituted one to three times by C 1 -C 4 -alkyl, halogen, nitro or cyano; a cycloalkenyl group; a ketone or aldehyde group; an ester group; a carbamoyl group; a silyl group; a siloxanyl group; Ar 10 or —CR 5 R 6 —(C j H 2j )—Ar 10 , where j stands for 0, 1, 2, 3 or 4;

or R 2 and Ar 1 , together with the vinyl moiety they are bonding to, form a ring such as an aryl or heteroaryl group, which may optionally be substituted by G;

X is CR where R is as defined for R 1 , or is another ketopyrrole moiety of the formula (Ib)

the index g is 0 or 1 and Ar, if present, is a tetravalent residue connected to the rest of the molecule by 2 chemical double bonds, and is selected from quinoid C 6 -C 10 ring systems, ═C 6 H 4 ═, and residues of the formula

Ar 1 , if not linked to R 2 , and Ar 2 , Ar 2′ , Ar 3 , Ar 3′ , Ar 4 , Ar 4′ , and Ar 5 independently of each other are selected from divalent carbocyclic moieties of 5 to 15 carbon atoms, divalent heterocyclic moieties of 2 to 15 carbon and 1-8 heteroatoms selected from O, N, S, Si, each of said moieties containing conjugated or cross-conjugated double and/or triple bonds, or ethylenic or ethinic moieties, where each of these moieties is unsubstituted or substituted by E;

R 5 and R 6 independently from each other stand for hydrogen, fluorine, cyano or C 1 -C 4 alkyl, which can be substituted by fluorine, chlorine or bromine, or phenyl, which can be substituted one to three times with C 1 -C 4 alkyl,

Ar 10 stands for aryl or heteroaryl, which may optionally be substituted by G, phenyl or 1- or 2-naphthyl which can be substituted one to three times with C 1 -C 8 alkyl, C 1 -C 8 thioalkoxy, and/or C 1 -C 8 alkoxy;

D is —CO—; —COO—; —S—; —SO—; —SO 2 —; —OP(O)(OR 29 )O—; —OP(O)(R′ 29 )O—; —O—; —NR 25 —; —CR 23 ═CR 24 —; or —C≡C—; and

E is —OR 29 ; —SR 29 ; —SOR 29 ; —SO 2 R 29 ; —NR 25 R 26 ; —COR 28 ; —COOR 27 ; —CONR 25 R 26 ; —CN; nitro; —OP(O)(OR 29 ) 2 ; —OP(O)(R′ 29 ) 2 ; —Si(R′ 29 ) 3 ; or halogen;

G and G′ independently are E; C 1 -C 18 alkyl, which may be interrupted by D; or C 1 -C 18 alkoxy which is substituted by E and/or, if containing 2 or more carbon atoms, interrupted by D, wherein

R 23 , R 24 , R 25 and R 26 are independently of each other H; C 6 -C 18 aryl; C 6 -C 18 aryl which is substituted by C 1 -C 18 alkyl, or C 1 -C 18 alkoxy; C 1 -C 18 alkyl; or C 2 -C 18 alkyl which is interrupted by —O—;

R 27 and R 28 are independently of each other H; C 6 -C 18 aryl; C 6 -C 18 aryl which is substituted by C 1 -C 18 alkyl, or C 1 -C 18 alkoxy; C 1 -C 18 alkyl; or C 2 -C 18 alkyl which is interrupted by —O—,

R 29 is H; C 6 -C 18 aryl; C 6 -C 18 aryl, which is substituted by C 1 -C 18 alkyl, or C 1 -C 18 alkoxy; C 1 -C 18 alkyl; or C 2 -C 18 alkyl which is interrupted by —O—;

R′ 29 is as defined for R 29 except that R′ 29 is not H;

or a tautomer of such a compound, oligomer or polymer.

2. Semiconductor device of claim 1 , wherein

Ar 1 , if not linked to R 2 , as well as Ar 2 , Ar 2′ , Ar 3 , Ar 3′ , Ar 4 , Ar 4′ and Ar 5 are independently of each other selected from

wherein L is selected from CR 7 R′ 7 , C═O, C═NR 7 , O, S, NR 7 , SiR 17 R′ 17 ;

R 3 may be the same or different within one group and is selected from hydrogen, a residue E, C 1 -C 25 alkyl, which may optionally be substituted by E and/or, if containing 2 or more carbon atoms, interrupted by D, C 6 -C 24 aryl, which may optionally be substituted by G, C 2 -C 20 heteroaryl, which may optionally be substituted by G, C 1 -C 18 alkoxy, which may optionally be substituted by E and/or, if containing 2 or more carbon atoms, interrupted by D, C 7 -C 25 aralkyl, wherein ar (=aryl) of aralkyl may optionally be substituted by G, or —CO—R 28 , or two or more groups R 3 which are in the neighbourhood to each other, form a ring;

R 4 , R 4′ , R 7 and R 7′ independently from each other stand for hydrogen, a residue E, C 1 -C 25 alkyl, which may optionally be substituted by E and/or, if containing 2 or more carbon atoms, interrupted by D, C 6 -C 24 aryl, which may optionally be substituted by G, C 2 -C 20 heteroaryl, which may optionally be substituted by G, C 1 -C 18 alkoxy, which may optionally be substituted by E and/or, if containing 2 or more carbon atoms, interrupted by D, C 7 -C 25 aralkyl, wherein ar (=aryl) of aralkyl may optionally be substituted by G, or —CO—R 28 ; or R 4 and R 4′ form a ring,

and R 17 and R′ 17 are as defined as R 29 .

3. Semiconductor device of claim 1 , wherein each aryl is selected from phenyl and thiophenyl.

4. Semiconductor device of claim 1 , wherein A and A′ are independently selected from hydrogen; C 1 -C 25 alkyl or C 2 -C 25 alkenyl, each of which may optionally be substituted by E and/or in a C,C-single bond, if present, interrupted by D; Ar 10 or —CR 5 R 6 —(CH 2 ) j —Ar 10 ;

Ar 10 is selected from phenyl and thiophenyl;

D is —S—; —O—; —CR 23 ═CR 24 —; and

E is —OR 29 ; —SR 29 ; —NR 25 R 26 ; —CN; or halogen;

G and G′ independently are E; C 1 -C 18 alkyl, which may be interrupted by D; or C 1 -C 18 alkoxy which is substituted by E and/or, if containing 2 or more carbon atoms, interrupted by D, wherein

R 23 , R 24 , R 25 and R 26 are independently of each other H; phenyl; thiophenyl; phenyl or thiophenyl which is substituted by C 1 -C 18 alkyl, or C 1 -C 18 alkoxy; C 1 -C 18 alkyl;

R 29 is H; phenyl; thiophenyl; phenyl or thiophenyl, which is substituted by C 1 -C 18 alkyl or C 1 -C 18 alkoxy; C 1 -C 18 alkyl;

R′ 29 is as defined for R 29 except that R′ 29 is not H.

5. Semiconductor device of claim 1 , wherein the compound of the formula (I) conforms to the formula (IIa), (IIc), or (IIe) and the oligomer or polymer comprising repeating units of the formula (Ia) conforms to the formula (IIb), (IId), or (IIf)

with symbols as defined in claim 1 .

6. Semiconductor device of claim 1 , wherein the oligomer or polymer comprising repeating units of the formula (Ia) conforms to the formula (IIIa) or (IIIb)

with symbols as defined in claim 1 .

7. Semiconductor device according to claim 1 , wherein the layer comprises an oligomer or polymer comprising repeating units of formula (Ia), (IIb), (IId) and/or (IIIb),

wherein the oligomer or polymer is a homoligomer or homopolymer,

containing moieties A as end groups of the homooligomer or homopolymer chain, which end groups A, A′ are independently selected from hydrogen; C 1 -C 25 alkyl or C 2 -C 25 alkenyl, each of which may optionally be substituted by E and/or in a C,C-single bond, if present, interrupted by D; Ar 10 or —CR 5 R 6 —(CH 2 ) j —Ar 10 ;

where R 5 and R 6 independently from each other stand for hydrogen, fluoro, or C 1 -C 4 alkyl which can be substituted by fluoro, and

Ar 10 stands for a group of formula

where

p stands for 0, 1, 2, or 3;

R 3 may be the same or different within one group and is selected from C 1 -C 18 alkyl, C 1 -C 18 alkoxy, each of which may be substituted by E; or is —CO—R 28 ; or two or more groups R 3 which are in the neighbourhood to each other, form an annelated, 5 or 6 membered carbocyclic ring;

R 4 , R 4′ and R 4″ independently stand for hydrogen, C 1 -C 25 alkyl, which may optionally be substituted by E and/or, if containing 2 or more carbon atoms, interrupted by D; C 1 -C 18 alkoxy, which may optionally be substituted by E and/or, if containing 2 or more carbon atoms, interrupted by D; C 7 -C 15 phenylalkyl, wherein phenyl may optionally be substituted by G, or —CO—R 28 .

8. An oligomer or polymer comprising at least 4 repeating units of the formula

wherein a, b, c, d, e and f are from the range 0-3;

each of R 1 , R 2 independently are selected from hydrogen; E; C 1 -C 25 alkyl, C 2 -C 25 alkenyl, C 2 -C 24 alkynyl, each of which may optionally be substituted by E and/or in any C,C-single bond, if present, interrupted by D; a cycloalkyl group, which can be substituted by E, one to three times by C 1 -C 8 alkyl, C 1 -C 8 thioalkoxy, or C 1 -C 8 alkoxy; or a cycloalkyl group, which can be condensed one or two times by unsubstituted phenyl or phenyl substituted by E, phenyl substituted one to three times by C 1 -C 4 -alkyl, halogen, nitro or cyano; a cycloalkenyl group; a ketone or aldehyde group; an ester group; a carbamoyl group; a silyl group; a siloxanyl group; Ar 10 or —CR 5 R 6 —(C j H 2j )—Ar 10 , where j stands for 0, 1, 2, 3 or 4;

or R 2 and Ar 1 , together with the vinyl moiety they are bonding to, form a ring such as an aryl or heteroaryl group, which may optionally be substituted by G;

X is CR where R is as defined for R 1 , or is another ketopyrrole moiety of the formula (Ib)

the index g is 0 or 1 and Ar, if present, is a tetravalent residue connected to the rest of the molecule by 2 chemical double bonds, and is selected from quinoid C 6 -C 10 ring systems, ═C 6 H 4 ═, and residues of the formula

Ar 1 , if not linked to R 2 , and Ar 2 , Ar 2′ , Ar 3 , Ar 3′ , Ar 4 , Ar 4′ and Ar 5 independently of each other are selected from divalent carbocyclic moieties of 5 to 15 carbon atoms, divalent heterocyclic moieties of 2 to 15 carbon and 1-8 heteroatoms selected from O, N, S, Si, each of said moieties containing conjugated or cross-conjugated double and/or triple bonds, or ethylenic or ethinic moieties, where each of these moieties is unsubstituted or substituted by E;

R 5 and R 6 independently from each other stand for hydrogen, fluorine, cyano or C 1 -C 4 alkyl, which can be substituted by fluorine, chlorine or bromine, or phenyl, which can be substituted one to three times with C 1 -C 4 alkyl,

Ar 10 stands for aryl or heteroaryl, which may optionally be substituted by G, phenyl or 1- or 2-naphthyl which can be substituted one to three times with C 1 -C 8 alkyl, C 1 -C 8 thioalkoxy, and/or C 1 -C 8 alkoxy;

D is —CO—; —COO—; —S—; —SO—; —SO 2 —; —OP(O)(OR 29 )O—; —OP(O)(R′ 29 )O—; —O—; —NR 25 —; —CR 23 ═CR 24 —; or —C≡C—; and

E is —OR 29 ; —SR 29 ; —SOR 29 ; —SO 2 R 29 ; —NR 25 R 26 ; —COR 28 ; —COOR 27 ; —CONR 25 R 26 ; —CN; nitro; —OP(O)(OR 29 ) 2 ; —OP(O)(R′ 29 ) 2 ; —Si(R′ 29 ) 3 ; or halogen;

G and G′ independently are E; C 1 -C 18 alkyl, which may be interrupted by D; or C 1 -C 18 alkoxy which is substituted by E and/or, if containing 2 or more carbon atoms, interrupted by D, wherein

R 23 , R 24 , R 25 and R 26 are independently of each other H; C 6 -C 18 aryl; C 6 -C 18 aryl which is substituted by C 1 -C 18 alkyl, or C 1 -C 18 alkoxy; C 1 -C 18 alkyl; or C 2 -C 18 alkyl which is interrupted by —O—;

R 27 and R 28 are independently of each other H; C 6 -C 18 aryl; C 6 -C 18 aryl which is substituted by C 1 -C 18 alkyl, or C 1 -C 18 alkoxy; C 1 -C 18 alkyl; or C 2 -C 18 alkyl which is interrupted by —O—,

R 29 is H; C 6 -C 18 aryl; C 6 -C 18 aryl, which is substituted by C 1 -C 18 alkyl, or C 1 -C 18 alkoxy; C 1 -C 18 alkyl; or C 2 -C 18 alkyl which is interrupted by —O—;

R′ 29 is as defined for R 29 except that R′ 29 is not H;

or a tautomer of such a compound, oligomer or polymer.

9. Process for the preparation of an organic semiconductor device according to claim 1 , which process comprises applying a solution and/or dispersion of a compound of the formula (I) or an oligomer or polymer comprising repeating units of the formula (Ia) in an organic solvent to a substrate and removing the solvent.

10. A semiconductor device according to claim 1 , selected from the group consisting of a charge-transport, semiconducting, electric conducting, photoconducting, light emitting material, surface-modifying material, electrode material in batteries, alignment layer, OFET, IC, TFT, display, RFITD tag, electro- or photoluminescent device, backlight of display, photovoltaic or sensor device, charge injection layer, Schottky diode, memory device, planarising layer, antistatic, conductive substrate or pattern, photoconductor, or electrophotographic material comprising the compound of formula (I) or an oligomer or polymer comprising repeating units of the formula (Ia) according to claim 1 .