Gate driving apparatus
A gate driving apparatus according to the embodiment includes a first switching device, a second switching device that outputs a signal to charge a capacitance of the first switching device, a third switching device connected in parallel to the second switching device to prevent a drop of a voltage output from the second switching device, and a fourth switching device that outputs a signal to discharge the capacitance of the first switching device. An NMOS transistor is used as a main switching device and a PMOS transistor connected in parallel to the NMOS transistor is used as a sub-switching device, so that the chip size is reduced without dropping the output voltage of the gate driving apparatus. The loss of the switching device is prevented by preventing the output voltage of the gate driving apparatus from being dropped.
1. A gate driving apparatus comprising:
a first switching device;
a second switching device that outputs a signal to charge a capacitance of the first switching device;
a third switching device connected in parallel to the second switching device to prevent a drop of a voltage output from the second switching device; and
a fourth switching device that outputs a signal to discharge the capacitance of the first switching device,
wherein the first switching device is an insulated gate bipolar transistor, the second and fourth switching devices are NMOS transistors and the third switching device is a PMOS transistor, and wherein
the third switching device charges the capacitance of the first switching device when the second switching device is turned off.
2. The gate driving apparatus of claim 1 , further comprising a driver that receives a pulse width modulation signal to drive the first switching device by supplying a current to the first switching device.
3. The gate driving apparatus of claim 2 , wherein the driver drives the second switching device and the fourth switching device while setting a dead time.
4. The gate driving apparatus of claim 2 , wherein the driver turns on the second and third switching devices and turns off the fourth switching device.
5. The gate driving apparatus of claim 2 , wherein the driver turns off the second and third switching devices and turns on the fourth switching device.
6. The gate driving apparatus of claim 1 , wherein the capacitance of the first switching device is a gate capacitance of the insulated gate bipolar transistor.
7. The gate driving apparatus of claim 1 , wherein the capacitance of the first switching device is a parasitic capacitance generated in the first switching device.
8. A gate driving apparatus including a power source and a driver, the gate driving apparatus comprising:
a first NMOS transistor;
a second NMOS transistor;
a PMOS transistor; and
an insulated gate bipolar transistor,
wherein a drain terminal of the first NMOS transistor is connected to a terminal of the power source and the PMOS transistor, a gate terminal of the first NMOS transistor is connected to the driver, and a source terminal of the first NMOS transistor is connected to a drain terminal of the PMOS transistor, a drain terminal of the second NMOS transistor and a gate terminal of the insulated gate bipolar transistor,
a gate terminal of the PMOS transistor is connected to the driver,
a gate terminal of the second NMOS transistor is connected to the driver, and
a source terminal of the second NMOS transistor and an emitter terminal of the insulated gate bipolar transistor are grounded,
wherein the PMOS transistor charges the capacitance of the insulated gate bipolar transistor when the first NMOS transistor is turned off.
9. The gate driving apparatus of claim 8 , wherein the PMOS transistor drops an output voltage of the first NMOS transistor.
10. The gate driving apparatus of claim 8 , wherein the driver turns on the first NMOS transistor and the PMOS transistor and turns off the second NMOS transistor to charge a gate capacitance of the insulated gate bipolar transistor.
11. The gate driving apparatus of claim 8 , wherein the driver turns off the first NMOS transistor and the PMOS transistor and turns on the second NMOS transistor to discharge a gate capacitance of the insulated gate bipolar transistor.
12. The gate driving apparatus of claim 8 , wherein the driver prevents an arm short among the first NMOS transistor, the PMOS transistor and the second NMOS transistor by setting a dead time.