IP Library › Granted Patent US 8,766,310
Granted Patent B2
US 8,766,310 · App. 12/849,098 · Granted Jul 1, 2014

Semiconductor light emitting device and method for manufacturing same

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Quick Facts
Patent No.
US 8,766,310
App. No.
12/849,098
Granted
Jul 1, 2014
Kind
B2
Abstract

According to one embodiment, a semiconductor light emitting device includes, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a first interconnection, and a second interconnection. The first semiconductor layer has a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion selectively provided on the second major surface, and a trench formed from the second major surface to the first major surface. The second semiconductor layer is stacked on the protrusion of the first semiconductor layer and includes a light emitting layer. The first electrode is provided on the second major surface of the first semiconductor layer and a side surface of the trench. The second electrode is provided on a surface of the second semiconductor layer on an opposite side to the first semiconductor layer.

Claims (34)

1. A semiconductor light emitting device comprising:

a semiconductor layer having a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion including a light emitting layer and a depression provided on the second major surface, and a trench that extends from a bottom surface of the depression to the first major surface;

a first electrode provided on the bottom surface of the depression of the semiconductor layer and a side surface of the trench;

a second electrode provided on a surface of the protrusion of the semiconductor layer;

a first interconnection provided on a surface of the first electrode, the first interconnection buried inside the first electrode in the trench; and

a second interconnection provided on a surface of the second electrode.

2. The device of claim 1 , wherein the first electrode is provided also at a bottom of the trench.

3. The device of claim 1 , wherein the protrusion is provided on both sides of the trench in a width direction.

4. The device of claim 1 , further comprising:

an insulating film provided on a side surface of the protrusion around the first electrode.

5. The device of claim 1 , further comprising:

a first metal pillar provided on a surface of the first interconnection on an opposite side to the first electrode; and

a second metal pillar provided on a surface of the second interconnection on an opposite side to the second electrode.

6. The device of claim 5 , further comprising:

a resin covering a periphery of each of the first metal pillar and the second metal pillar.

7. The device of claim 1 , further comprising:

a phosphor layer opposed to the first major surface of the first semiconductor layer.

8. The device of claim 1 , wherein the semiconductor layer is formed on a substrate and removed from the substrate.

9. A semiconductor light emitting device comprising:

a semiconductor layer having a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion including a light emitting layer and a depression provided on the second major surface, and a trench that extends from a bottom surface of the depression to the first major surface, the trench dividing a portion of the semiconductor layer to have two side surfaces facing each other, the trench provided in the depression extending in a straight line, the trench not provided in the protrusion;

a first electrode provided on the bottom surface of the depression and the two side surfaces of the trench;

a second electrode provided on a surface of the protrusion of the semiconductor layer;

a first interconnection provided on a surface of the first electrode; and

a second interconnection provided on a surface of the second electrode.

10. The device of claim 8 , wherein the semiconductor layer is grown as a crystal on the substrate and removed from the substrate.

11. A semiconductor light emitting device comprising:

a semiconductor layer having a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion including a light emitting layer and a depression provided on the second major surface, and a trench that extends from a bottom surface of the depression to the first major surface;

a first electrode provided on the bottom surface of the depression of the semiconductor layer and a side surface of the trench;

a second electrode provided on a surface of the protrusion of the semiconductor layer;

a first interconnection provided on a surface of the first electrode;

a second interconnection provided on a surface of the second electrode; and

a phosphor layer provided on the first major surface side of the semiconductor layer without a substrate between the first major surface and the phosphor layer.

12. The device of claim 1 , wherein the first electrode is in contact with the side surface of the trench.

13. The device of claim 1 , wherein the semiconductor layer had been formed on a substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 1, 2017
From: KABUSHIKI KAISHA TOSHIBA
To: ALPAD CORPORATION
Reel/Frame 044591/0755 →